• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.189-192
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• 2001

We have studied fabrication processes that form asymmetric $\Gamma$-gate with a 0.1${\mu}{\textrm}{m}$ gate length in MMIC's(Monolithic Microwave Integrated Circuits). Asymmetric $\Gamma$-gate was fabricated using mixture of PMMA and MCB. Thus pseudomorphic high electron mobility transistor (PHEMT's) with 0.1${\mu}{\textrm}{m}$ gate length was fabricated via several steps such as mesa isolation, metalization, recess, passivation. PHEMT's has the -1.75 V of pinch-off voltage (Vp), 63 mA of drain saturation current(Idss and 363.6 mS/mm of maximum transconductance (Gm) in DC characteristics and current gain cut-off frequency of 106 GHz and maximum frequency of oscillation of 160 GHz in RF characteristics.

• Nuclear Engineering and Technology
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• v.52 no.8
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• pp.1764-1770
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• 2020

The present work was mainly concerned with studying the operation of RC-phase shift oscillator based on MOSFET type 2N6660 under the influence of different temperature levels ranging from room temperature (25 ℃) up-to135 ℃ and gamma-irradiation up-to 3.5 kGy. In this concern, both the static (I-V) characteristic curves of MOSFET devices and the output signal of the proposed oscillator were recorded under ascending levels of both temperature and gamma-irradiation. From which, it is clearly shown that the drain current was decreased from 0.22 A, measured at 25 ℃, down to 0.163 A, at 135 ℃. On the other hand, its value was increased up-to 0.49 A, whenever the device was exposed to gamma-rays dose of 3.5 kGy. Considering RC-phase shift oscillator, the oscillation frequency and output pk-pk voltage were decreased whenever MOSFET device exposed to gamma radiation by ratio 54.9 and 91%, respectively. While, whenever MOSFET device exposed to temperature the previously mentioned parameters were shown to be decreased by ratio 2.07 and 46.2%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.291-294
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• 2003

The circuit substrate was made from the Low Temperature Cofired Ceramics(LTCC) that a $\varepsilon_\gamma$ was 7.8. Accumulated Varactor and the low noise transistor which were a Surface Mount Device-type element on LTCC substrate. Let passive element composed R, L, C with strip-line of three dimension in the multilayer substrate circuit inside, and one structure accumulate band-pass filter, resonator, a bias line, a matching circuit, and made it. Used Screen-Print process, and made Strip-line resonator. A design produced and multilayer-type VCO(Voltage Controlled Oscillator), and recognized a characteristic with the Spectrum Analyzer which was measurement equipment. Measured multilayer structure VCO is oscillation frequency 1292[MHz], oscillation output -28.38[dBm], hamonics characteristic -45[dBc] in control voltage 1.5[V], A phase noise is -68.22[dBc/Hz] in 100 KHz offset frequency. The oscillation frequency variable characteristic showed 30[MHz/V] characteristic, and consumption electric current is approximately 10[mA].

• Journal of Radiation Protection and Research
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• v.16 no.2
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• pp.1-6
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• 1991

The $HgI_2$ single crystal which can be used for the ${\gamma}-ray$ detector at room temperature was grown by Temperature Oscillation Method. The low temperature photoluminescence, specific resistivity and trap concentration of $HgI_2$ single crystal were investigated. Three main luminescence bands were observed at 2.30eV, 2.20eV and 2.00eV at 20K, related to the excitons, I-vacancies and impurities, respectively. The specific resistivity and trap concentration of $HgI_2$ single crystal were $10^{11}{\Omega}\;cm\;and\;1.8{\times}10^{14}/cm^3$ at room temperature, respectively. Also the radiation detecting system was deviced by $HgI_2$ ${\gamma}-ray$ detector, one chip microprocessor, LCD module and personal computer. The prepared $HgI_2$ ${\gamma}-ray$ detector showed a good linearity of ${\gamma}-radiation$ dose for standard ${\gamma}-ray$.

• Journal of applied mathematics & informatics
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• v.35 no.3_4
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• pp.267-276
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• 2017

The purpose of this paper is to investigate the local asymptotic stability of equilibria, the periodic nature of solutions, the existence of unbounded solutions and the global behavior of solutions of the fractional difference equation $$x_{n+1}=\frac{^{{\alpha}x}n-1(k+1)}{{\beta}+{\gamma}x^p_{n-k}x^q_{n-(k+2)}}$$, $$n=0,1,{\dots}$$ where the parameters ${\alpha}$, ${\beta}$, ${\gamma}$, p, q are non-negative numbers and the initial values $x_{-(k+2)}$,$x_{-(k+1)}$, ${\dots}$, $x_{-1}$, $x_0{\in}\mathb{R}^+$.

• Proceedings of the Korean Society for Cognitive Science Conference
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• 2010.05a
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• pp.37-41
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• 2010

The previous investigations of electroencephalogram (EEG) activity in the memory retrieval tasks demonstrated that event-related potentials (ERP) during recollection showed different durations and the peak levels from those without recollection. However, it has been unknown that recollection in memory retrieval also modulates high-frequency brain rhythms as well as establishes large-scale synchronization across different cortical areas. In this study, we examined the spectral components of the EEG signals, especially the gamma bands (20-80Hz), measured during the memory retrieval tasks. Specifically, we focused on two major spectral components: first, we evaluated the temporal patterns of the power spectral density before and after the onset of the memory retrieval task; second, we estimated phase synchrony between all possible pairs of EEG channels to evaluate large-scale synchronization. Fourteen healthy subjects performed the memory retrieval task in the virtual reality environment where they selected whether or not t he present item was seen in the previous training period. When the subjects viewed the unseen items, the middle gamma power (40-60Hz) appeared to increase 200-500ms after stimulus onset while the low gamma power (20Hz) was suppressed all the way through the post-stimulus period 150ms after onset. The degree of phase synchronization in this low gamma level, however, increased when the subjects fetched the item from memory. This suggests that phase synchrony analysis might reveal different aspects of the memory retrieval process than the gamma power, providing additional information to the inference on the brain dynamics during memory retrieval.

• Nuclear Engineering and Technology
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• v.48 no.5
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• pp.1219-1229
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• 2016

The present paper reports on a trial to shed further light on the characterization, applications, and operation of radar speed guns or Gunn diodes on different radiation environments of neutron or g fields. To this end, theoretical and experimental investigations of microwave oscillating system for outer-space applications were carried out. Radiation effects on the transient parameters and electrical properties of the proposed devices have been studied in detail with the application of computer programming. Also, the oscillation parameters, power characteristics, and bias current were plotted under the influence of different ${\gamma}$ and neutron irradiation levels. Finally, shelf or oven annealing processes were shown to be satisfactory techniques to recover the initial characteristics of the irradiated devices.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.230-233
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• 2010

The authors investigated the anodization mechanism of aluminum in an oxalic acid solution, and the electrochemical reaction is very unique for pore formation via the dissolution process, which is very dependent on the surface geometry in nanoporous alumina templates. The cross-sectional nanochannels showed that the geometrical curvature of the initial surface can cause the branching of nanochannels to be adjusted in volume occupancy to be direct to the electric field normal to the surface. The nanoporous alumina with the crystalline $\gamma-Al_2O_3$ phase showed hexagonal ordering at a voltage of 40 V, with a nanohole distance of 102 nm from the charge density oscillation of the oxalic acid solution.

• Sleep Medicine and Psychophysiology
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• v.16 no.2
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• pp.49-55
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• 2009

This review aims to introduce the basic neurobiological aspects of dream. There have been long debates on whether the neurobiology of rapid eye movement (REM) sleep is identical to that of dream. However, many theories on dream are based on the findings of REM sleep. Bizarre cognition and intense emotion in dream have been suggested to derive from physiological (e.g. desynchronized gamma oscillation and postsynaptic inhibition), chemical (e.g. decreased noradrenalin and serotonin, increased acetylcholine and modulation of dopamine), anatomical (e.g. deactivation of dorsolateral prefrontal cortex and activation of limbic and paralimbic areas) change in REM sleep. In addition, dream has been suggested to play its neurobiological roles. Processing of negative emotion may be one of the functions of dream. Dream is also supposed to consolidate memory, especially semantic memory. Despite a number of hypotheses and debates, the neurobiological mechanism of dream generation has not been concluded.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.107-112
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• 2011

This paper is for improving the RF frequency performance of a fabricated 100nm ${\Gamma}$-gate MHEMT, scaling down vertically for the epitaxy-structure layers of the device. Hydrodynamic simulation parameters are calibrated for the fabricated MHEMT with the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure grown on the GaAs substrate. With these calibrated parameters, simulations for the vertically-scaled epitaxial layers of the device are performed and analyzed for DC/RF characteristics, including the quantization effect due to the thickness reduction of InGaAs channel layer. A newly designed epitaxy-structure device shows higher extrinsic transconductance, $g_m$ of 1.556 S/mm, and higher frequency performance, $f_T$ of 222.5 GHz and $f_{max}$ of 849.6 GHz.