• Bulletin of the Korean Chemical Society
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• 제23권2호
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• pp.225-228
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• 2002

Amorphous $Ga_2O_3$ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, $Ga(O^iPr)_3$, as single precursor. Deposition was carried out in the substrate temperature range 400-800 $^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric $Ga_2O_3$ thin films at 500-600 $^{\circ}C$. XPS depth profiling by $Ar^+$ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ${\sim}10{\AA}$. The interfacial layer of the $Ga_2O_3$/Si was measured to be ${\sim}35{\AA}$ thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.

• Journal of Information Display
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• 제12권1호
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• pp.47-50
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• 2011

Highly stable amorphous indium.gallium.zinc-oxide (a-IGZO) thin-film transistors (TFTs) were fabricated with an etchstopper and via-hole structure. The TFTs exhibited 40 $cm^2$/V s field-effect mobility and a 0.21 V/dec gate voltage swing. Gate-bias stress induced a negligible threshold voltage shift (${\Delta}V_{th}$) at room temperature. The excellent stability is attribute to the via-hole and etch-stopper structure, in which, the source/drain metal contacts the active a-IGZO layer through two via holes (one on each side), resulting in minimized damage to the a-IGZO layer during the plasma etching of the source/drain metal. The comparison of the effects of the DC and AC stress on the performance of the TFTs at $60^{\circ}C$ showed that there was a smaller ${\Delta}V_{th}$ in the AC stress compared with the DC stress for the same effective stress time, indicating that the trappin of the carriers at the active layer-gate insulator interface was the dominant degradation mechanism.

• 한국염색가공학회지
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• 제34권3호
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• pp.207-216
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• 2022

Hydrogels have gained considerable attention in various fields due to their easily transformative ability by different stimulation. In addition, metal-based conductive additives can enable the hydrogels to be conductive with dimension change. Although the development of the additives offered enhanced electrical properties to the hydrogels, correspondingly enhanced mechanical properties may limit the volume and electrical properties switching after stimulation. Here we prepared poly(N-isopropylacrylamide) (PNIPAM) thermo-responsive hydrogel that has a 32℃ of low critical solution temperature and added liquid metal particles (LMPs) as conductive additives, possessing soft and stretchable benefits. The LMPs enabled PNIPAM (PNIPAM/LMPs) hydrogels to be constricted over 32℃ with a high volume switching ratio of 15.2 when deswelled. Once the LMPs are spontaneously oxidized in hydrogel culture, the LMPs can release gallium ions into the hydrogel nature. The released gallium ions and oxidized LMPs enhanced the modulus of the PNIPAM/LMPs hydrogel, triggering high mechanical stability during repeated swelling/deswelling behavior. Lastly, highly constricted PNIPAM/LMPs hydrogel provided a 5x10⁶ of electrical switching after deswelling, and the switching ratio was closely maintained after repeated swelling/deswelling transformation. This study opens up opportunities for hydrogel use requiring thermo-responsive and high electrical switching fields.

• Journal of Power Electronics
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• 제15권6호
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• pp.1489-1498
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• 2015

Gallium nitride (GaN)-based power switching devices, such as high-electron-mobility transistors (HEMT), provide significant performance improvements in terms of faster switching speed, zero reverse recovery, and lower on-state resistance compared with conventional silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET). These benefits of GaN HEMTs further lead to low loss, high switching frequency, and high power density converters. Through simulation and experimentation, this research thoroughly contributes to the understanding of performance characterization including the efficiency, loss distribution, and thermal behavior of a 160-W GaN-based synchronous boost converter under various output voltage, load current, and switching frequency operations, as compared with the state-of-the-art Si technology. Original suggestions on design considerations to optimize the GaN converter performance are also provided.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.443-443
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• 2012

We fabricated a-IGZO TFT with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. Enhanced electrical device performance of a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = = 400/50 mm) was achieved with a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10-12 A, a threshold voltage of 1.80 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ration of 9x109. It demonstrated the potential application of the AZO/Ag/AZO film as a promising S/D contact material for the fabrication of the high performance TFTs.

• 한국표면공학회지
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• 제49권6호
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• pp.477-485
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• 2016

As expensive and valuable metals being used in electronic and semiconducting industries are abandoned as industrial wastes after use of them, it is required to recover them from e-wasted electronics parts. Gold which is used for printed circuit boards or electronic equipments, accessories, etc., is one of e-Wasted materials and recently indium, gallium, zirconium, cobalt, molybdenum and lithium are bacome valuable metals to be recovered from the e-wastes. Since the amount of precious metals is now being faced with scarcity, lean too much on area and instability of supply, and industrial demands are rapidly increasing every year, it becomes more important to recover the valuable metals from the industrial wastes. In this review, we introduced technologies and research trend of the recovery processes of valuable metals from the e-wastes in high-tech devices over the world.

• ETRI Journal
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• 제44권1호
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• pp.147-154
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• 2022

We demonstrate a new double-layer structure for stretchable interconnects, where the top surface of a serpentine polyimide support is coated with a thin eutectic gallium-indium liquid metal layer. Because the liquid metal layer is constantly fixed on the solid serpentine body in this liquid-on-solid structure, the overall stretching is accomplished by widening the solid frame itself, with little variation in the total length and cross-sectional area of the current path. Therefore, we can achieve both invariant resistance and infinite fatigue life by combining the stretchable configuration of the underlying body with the freely deformable nature of the top liquid conductor. Further, we fabricated various types of double-layer interconnects as narrow as 10 ㎛ using the roll-painting and lift-off patterning technique based on conventional photolithography and quantitatively validated their beneficial properties. The new interconnecting structure is expected to be widely used in applications requiring high-performance and high-density stretchable circuits owing to its superior reliability and capability to be monolithically integrated with thin-film devices.

• 한국미생물·생명공학회지
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• 제44권4호
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• pp.535-539
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• 2016

제주도 넙치 양식장에서 주로 발생하는 어류질병세균인 S. parauberis, S. iniae, E. tarda에 대한 피해를 줄이고자 갈륨을 이용하여 어류질병세균을 억제하고자 한다. 본 연구진은 Sp, Si, Et의 생육도와 biofilm 형성능을 확인하였으며, 세균의 성장도와 biofilm 형성능간의 특정한 패턴은 없었으며 세균의 성장도가 높다 하더라도 biofilm을 활발히 형성하지 않음을 알 수 있었다. 어류질병세균이 형성하는 biofilm을 저해하기 위해 갈륨을 2.0, 4.0, 8.0 mg/ml로 첨가하여 저해능을 확인한 결과 72시간째 biofilm의 형성이 크게 저해되는 것을 확인하였다. 또한 biofilm을 저해하는 동시에 균주의 사멸능을 확인하기 위해 resazurin assay와 propidium iodide를 이용하여 염색한 결과 갈륨의 농도에 따라 균주의 사멸이 증가하는 것을 확인하였다. 이에 따라 in vitro 상에서 갈륨이 어류질병세균의 biofilm을 억제하는 동시에 균주를 사멸시키는 물질로서 가치가 있다고 사료된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.278-278
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• 2016

Solution-processed metal-oxide semiconductors have been considered as the next generation semiconducting materials for transparent and flexible electronics due to their high electrical performance. Moreover, since the oxide semiconductors show high sensitivity to light illumination and possess persistent photoconductivity (PPC), these properties can be utilized in realizing optical memory devices, which can transport information much faster than the electrons. In previous works, metal-oxide semiconductors are utilized as a memory device by using the light (i.e. illumination does the "writing", no-gate bias recovery the "reading" operations) [1]. The key issues for realizing the optical memory devices is to have high photoconductivity and a long life time of free electrons in the oxide semiconductors. However, mono-layered indium-zinc-oxide (IZO) and mono-layered indium-gallium-zinc-oxide (IGZO) have limited photoconductivity and relaxation time of 570 nA, 122 sec, 190 nA and 53 sec, respectively. Here, we boosted up the photoconductivity and relaxation time using a double-layered IZO/IGZO active layer structure. Solution-processed IZO (top) and IGZO (bottom) layers are prepared on a Si/SiO2 wafer and we utilized the conventional thermal annealing method. To investigate the photoconductivity and relaxation time, we exposed 9 mW/cm2 intensity light for 30 sec and the decaying behaviors were evaluated. It was found that the double-layered IZO/IGZO showed high photoconductivity and relaxation time of 28 uA and 1048 sec.

• 한국전기전자재료학회논문지
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• 제37권2호
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• pp.208-214
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• 2024

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (R_on,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (R_s) in the nonlinear section extracted using Cheung's formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.