• The korean journal of orthodontics
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• v.51 no.5
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• pp.313-320
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• 2021

Objective: The purpose of this study was to evaluate the effects of chewing gum and low-level laser therapy in alleviating orthodontic pain induced by the initial archwire. Methods: Patients with 3-6 mm maxillary crowding who planned to receive non-extraction orthodontic treatment were recruited for the study. Sixty-three participants (33 females and 30 males) were randomly allocated into three groups: laser, chewing gum, and control. In the laser group, a gallium aluminum arsenide (GaAlAs) diode laser with a wavelength of 820 nm was used to apply a single dose immediately after orthodontic treatment began. In the chewing gum group, sugar-free gum was chewed three times for 20 minutes-immediately after starting treatment, and at the twenty-fourth and forty-eighth hours of treatment. Pain perception was measured using a visual analog scale at the second, sixth, and twenty-fourth hours, and on the second, third, and seventh days. Results: There were no statistically significant differences between the groups at any measured time point (p > 0.05). The highest pain scores were detected at the twenty-fourth hour of treatment in all groups. Conclusions: Within the limitations of the study, we could not detect whether low-level laser therapy and chewing gum had any clinically significant effect on orthodontic pain. Different results may be obtained with a higher number of participants or using lasers with different wavelengths and specifications. Although the study had a sufficient number of participants according to statistical analysis, higher number of participants could have provided more definitive outcomes.

• Journal of IKEEE
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• v.24 no.4
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• pp.1093-1097
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• 2020

This work describes the design and characterization of a Ku-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) for satellite communication applications. The device technology used relies on 0.25 ㎛ gate length gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) of wireless information networking (WIN) semiconductor foundry. The developed Ku-band PHEMT MMIC power amplifier has a small-signal gain of 22.2~23.1 dB and saturated output power of 34.8~35.4 dBm over the entire band of 13.75 to 14.5 GHz. Maximum saturated output power is a 35.4 dBm (3.47 W) at 13.75 GHz. Its power added efficiency (PAE) is 30.6~37.83% and the chip dimensions are 4.4 mm×1.9 mm. The developed 3 W PHEMT MMIC power amplifier is expected to be applied in a variety of Ku-band satellite communication applications.

• Korean Journal of Optics and Photonics
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• v.35 no.2
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• pp.61-70
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• 2024

We demonstrate a laser power meter calibration system based on 12-diode laser sources coupled to single-mode fibres in a wavelength range from 400 to 1,600 nm. In our system, three laser power controllers ensure that the output power uncertainty of all laser sources is less than 0.1% (k=2). In addition, all laser beams are adjusted to have similar beam sizes of approximately 2 mm (1/e²-width) at the measurement position to minimise unmeasured laser power on a detector. As a reference detector, we use an integrating sphere combined with silicon and indium gallium arsenide photodiodes to minimise the non-uniformity and non-linearity of responsivity. The minimum uncertainty of the calibration system is estimated to be 1.1% (k=2) for most laser wavelengths.

• Journal of Veterinary Clinics
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• v.30 no.5
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• pp.346-352
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• 2013

The study was aimed to investigate the influence of diode laser on osteoarthritis (OA) of stifle joint induced by anterior cruciate ligament transection (ACLT). Sixty 10-week-old male Sprague-Dawley rats were used in this study. Right stifle joint was operated to create ACLT or sham. There were five study groups: control, Sham, ACLT, ACLT + Laser irradiation (ACLT+L) and ACLT + meloxicam administration (ACLT+M). Low-level laser therapy (LLLT) was applied at the operated stifle joint twice a week using an 808-nm indium-gallium-arsenide (InGaAs) diode laser during 8-week experimental period. Radiographical, gross morphological and histopathological findings were examined at 2, 4 and 8 weeks post-surgery. Radiography, CBC and chemistry tests showed no significant difference between groups. ACLT+L group showed remarkable cartilage damages compared with sham group morphologically and histopathologically at 2, 4 and 8 weeks after surgery. ACLT+M group also had more cartilage damages compared with sham group. Low-level laser therapy (LLLT) showed limitation to prevent progression of OA in the rat anterior cruciate ligament transection models; on the contrary it accelerated cartilage damage. It is assumed that the aggravating results of LLLT in this study might be due to excessive unstable movement of stifle joint from the pain-relieving effect of LLLT, rather than direct damaging effect of irradiation since LLLT did not affect cell viability.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.22-29
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• 2011

An infrared thermographic imaging module of [$320{\times}256$] focal-plane array (FPA) based on [InAs/GaSb] strained-layer superlattice (SLS) was fabricated, and its images were demonstrated. The p-i-n device consisted of an active layer (i) of 300-period [13/7]-ML [InAs/GaSb]-SLS and a pair of p/n-electrodes of (60/115)-period [InAs:(Be/Si)/GaSb]-SLS. FTIR photoresponse spectra taken from a test device revealed that the peak wavelength (${\lambda}_p$) and the cutoff wavelength (${\lambda}_{co}$) were approximately $3.1/2.7{\mu}m$ and $3.8{\mu}m$, respectively, and it was confirmed that the device was operated up to a temperature of 180 K. The $30/24-{\mu}m$ design rule was applied to single pixel pitch/mesa, and a standard photolithography was introduced for [$320{\times}256$]-FPA fabrication. An FPA-ROIC thermographic module was accomplished by using a $18/10-{\mu}m$ In-bump/UBM process and a flip-chip bonding technique, and the thermographic image was demonstrated by utilizing a mid-infrared camera and an image processor.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.334-334
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• 2013

In the past decade, the infrared detectors based on intersubband transition in quantum dots (QDs) have attracted much attention due to lower dark currents and increased lifetimes, which are in turn due a three-dimensional confinement and a reduction of scattering, respectively. In parallel, focal plane array development for infrared imaging has proceeded from the first to third generations (linear arrays, 2D arrays for staring systems, and large format with enhanced capabilities, respectively). For a step further towards the next generation of FPAs, it is envisioned that a two-dimensional metal hole array (2D-MHA) structures will improve the FPA structure by enhancing the coupling to photodetectors via local field engineering, and will enable wavelength filtering. In regard to the improved performance at certain wavelengths, it is worth pointing out the structural difference between previous 2D-MHA integrated front-illuminated single pixel devices and back-illuminated devices. Apart from the pixel linear dimension, it is a distinct difference that there is a metal cladding (composed of a number of metals for ohmic contact and the read-out integrated circuit hybridization) in the FPA between the heavily doped gallium arsenide used as the contact layer and the ROIC; on the contrary, the front-illuminated single pixel device consists of two heavily doped contact layers separated by the QD-absorber on a semi-infinite GaAs substrate. This paper is focused on analyzing the impact of a two dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2DAu-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show the enhanced electric fields (thereby increasing the absorption in the active layer) resulting from a surface plasmon, a guided mode, and Fabry-Perot resonances. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors.

• Journal of Life Science
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• v.16 no.1
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• pp.114-119
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• 2006

The purpose of this study was to determine effects of the Ga-As (Gallium-Arsenide) Dens-Bio laser on mechanically injured sciatic nerves of rats. The improvement of the injured rat sciatic nerve was evaluated by measuring of nerve conduction velocity and amplitude of compound muscle action potential. The sciatic nerves of forty male Sprague-Dawley rats were compressed with hemostatic forceps for 30 seconds. The experimental group was divided into 4 subgroups according to the duration of treatment. Lower power infrared laser irradiation was done transcutaneously to the injured sciatic nerve area, 3 minutes daily to each of four treatment groups for 1, 3, 5, and 7 weeks, respectively. Compound muscle action potential and nerve conduction velocity of sciatic nerve were obtained before nerve injury and at 1, 3, 5, and 7 weeks after injury. There were significant difference of the nerve conduction velocity and amplitudes of compound muscle action potential between the treatment group and non-treatment group at 1, 3, and 5 weeks after laser treatment. However, there were no differences found between the electrophysiologic parameters that were measured after 7 weeks in two groups. There was significant correlation between the increment of compound muscle action potential and nerve conduction velocity after time course according to laser treatment. In conclusion, the low power laser treatment had improved the sciatic nerve function, and therefore these results may provide the basic data to clarify the neurological recovery and treatment after incomplete peripheral nerve injury.