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http://dx.doi.org/10.7471/ikeee.2020.24.4.1093

A Ku-band 3 Watt PHEMT MMIC Power Amplifier for satellite communication applications  

Uhm, Won-Young (Agency for Defense Development)
Lim, Byeong-Ok (R&D Division, Electron Device Solution Inc.)
Kim, Sung-Chan (Department of Electronic Engineering, Hanbat National University)
Publication Information
Journal of IKEEE / v.24, no.4, 2020 , pp. 1093-1097 More about this Journal
Abstract
This work describes the design and characterization of a Ku-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) for satellite communication applications. The device technology used relies on 0.25 ㎛ gate length gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) of wireless information networking (WIN) semiconductor foundry. The developed Ku-band PHEMT MMIC power amplifier has a small-signal gain of 22.2~23.1 dB and saturated output power of 34.8~35.4 dBm over the entire band of 13.75 to 14.5 GHz. Maximum saturated output power is a 35.4 dBm (3.47 W) at 13.75 GHz. Its power added efficiency (PAE) is 30.6~37.83% and the chip dimensions are 4.4 mm×1.9 mm. The developed 3 W PHEMT MMIC power amplifier is expected to be applied in a variety of Ku-band satellite communication applications.
Keywords
Power amplifier; MMIC; GaAs; PHEMT; Ku-band;
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