• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.59-62
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• 2019

In this study, we have developed solution-processed, F-doped In-Ga-Zn-O semiconductors and investigated their applications to thin-film transistors. In order for forming the appropriate channel layer, precursor solutions were formulated by dissolving the metal salts in the designated solvent and an additive, ammonium fluoride, was incorporated additionally as a chemical modifier. We have studied thermal and chemical contributions by a thermal annealing and an incorporation of chemical modifier, from which it was revealed that electrical performances of the thin-film transistors comprising the channel layer annealed at a low temperature can be improved significantly along with an addition of ammonium fluoride. As a result, when the 20 mol% fluorine was incorporated into the semiconductor layer, electrical characteristics were accomplished with a field-effect mobility of $1.2cm^2/V{\cdot}sec$ and an $I_{on}/_{off}$ of $7{\times}10^6$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.528-533
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• 2019

We investigated the growth of $(Al_xGa_{1-x})_2O_3$ thin films on c-plane sapphire substrates that were grown by mist chemical vapor deposition (mist CVD). The precursor solution was prepared by mixing and dissolving source materials such as gallium acetylacetonate and aluminum acetylacetonate in deionized water. The [Al]/[Ga] mixing ratio (MR) of the precursor solution was adjusted in the range of 0~4.0. The Al contents of $(Al_xGa_{1-x})_2O_3$ thin films were increased from 8 to 13% with the increase of the MR of Al. As a result, the optical bandgap of the grown thin films changed from 5.18 to 5.38 eV. Therefore, it was determined that the optical bandgap of grown $(Al_xGa_{1-x})_2O_3$ thin films could be effectively engineered by controlling Al content.

• Journal of radiological science and technology
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• v.44 no.5
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• pp.459-464
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• 2021

The detector performance is important role in acquiring the gamma rays from patients. Among parameters of detector performances, there is density, which relates to respond to gamma rays. Therefore, we confirm the detection efficiency according to various detector materials based on the density parameter using GATE (geant4 application for emission tomography) simulation tool. The NaI (density: 3.67 g/cm³), CZT (Cadimium Zinc Telluride) (density: 5.80 g/cm³), CdTe (Cadmium Telluride) (5.85 g/cm³), and GAGG (Gadoinium Aluminum Gallium Garnet) (density g/cm³) were used as detector materials. In addition, the point source and quadrant bar phantom, which is modeled for 0.5, 1.0, 1.5, and 2.0 mm thicknesses, were modeled to confirm the quatitative analysis using sensitivity (cps/MBq) and the full width at half maximum (FWHM, mm) at the 2.0 mm bar thickness containing visual evaluation. Based on the results, the sensitivity for NaI, CZT, CdTe, and GAGG detector materials were 0.12, 0.15, 0.16, and 0.18 cps/MBq. In addition, the FWHM for quadrant bar phantom in the 2.0 mm bar thickness is 3.72, 3.69, 3.70, and 3.73 mm for NaI, CZT, CdTe, and GAGG materials, respectively. Compared with performance of detector materials according to density, the high density can improve detection efficiency in terms of sensitivity and mean count. Among these detector materials, the GAGG material is efficient for detection of gamma rays.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.5
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• pp.325-333
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• 2021

A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.19 no.2
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• pp.161-176
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• 2021

In this study, the electrochemical behavior of Sm on the binary liquid Al-Ga cathode in the LiCl-KCl molten salt system is investigated. First, the co-reduction process of Sm(III)-Al(III), Sm(III)-Ga(III), and Sm(III)-Ga(III)-Al(III) on the W electrode (inert) were studied using cyclic voltammetry (CV), square-wave voltammetry (SWV) and open circuit potential (OCP) methods, respectively. It was identified that Sm(III) can be co-reduced with Al(III) or Ga(III) to form Al_zSm_y or Ga_xSm_y intermetallic compounds. Subsequently, the under-potential deposition of Sm(III) at the Al, Ga, and Al-Ga active cathode was performed to confirm the formation of Sm-based intermetallic compounds. The X-ray diffraction (XRD) and scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS) analyses indicated that Ga₃Sm and Ga₆Sm intermetallic compounds were formed on the Mo grid electrode (inert) during the potentiostatic electrolysis in LiCl-KCl-SmCl₃-AlCl₃-GaCl₃ melt, while only Ga₆Sm intermetallic compound was generated on the Al-Ga alloy electrode during the galvanostatic electrolysis in LiCl-KCl-SmCl₃ melt. The electrolysis results revealed that the interaction between Sm and Ga was predominant in the Al-Ga alloy electrode, with Al only acting as an additive to lower the melting point.

• The korean journal of orthodontics
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• v.51 no.5
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• pp.313-320
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• 2021

Objective: The purpose of this study was to evaluate the effects of chewing gum and low-level laser therapy in alleviating orthodontic pain induced by the initial archwire. Methods: Patients with 3-6 mm maxillary crowding who planned to receive non-extraction orthodontic treatment were recruited for the study. Sixty-three participants (33 females and 30 males) were randomly allocated into three groups: laser, chewing gum, and control. In the laser group, a gallium aluminum arsenide (GaAlAs) diode laser with a wavelength of 820 nm was used to apply a single dose immediately after orthodontic treatment began. In the chewing gum group, sugar-free gum was chewed three times for 20 minutes-immediately after starting treatment, and at the twenty-fourth and forty-eighth hours of treatment. Pain perception was measured using a visual analog scale at the second, sixth, and twenty-fourth hours, and on the second, third, and seventh days. Results: There were no statistically significant differences between the groups at any measured time point (p > 0.05). The highest pain scores were detected at the twenty-fourth hour of treatment in all groups. Conclusions: Within the limitations of the study, we could not detect whether low-level laser therapy and chewing gum had any clinically significant effect on orthodontic pain. Different results may be obtained with a higher number of participants or using lasers with different wavelengths and specifications. Although the study had a sufficient number of participants according to statistical analysis, higher number of participants could have provided more definitive outcomes.

• Journal of the Korean Society of Radiology
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• v.12 no.7
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• pp.929-934
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• 2018

Studies for counting and detecting X-rays for the improvement of image quality and material analysis are active. In this work, the detector for X-ray photon counting was designed using Multi-pixel photon counter (MPPC) array and the detector characteristics were evaluated through simulation. Geant4 Application for Tomographic Emission (GATE) was used to obtain the position where the X-ray and the scintillation interacted, and this position was used as the light generation position of DETECT2000. 0.5 mm and 1 mm thick Gadolinium Aluminium Gallium Garnet (GAGG) scintillators were used and the light generated through a $4{\times}4$ array of MPPCs was acquired. The spatial resolution of the designed detector was evaluated by reconstructed image using the light signal acquired for each channel. We obtained images of more than 2 lp/mm in both 0.5 mm and 1 mm thick GAGG scintillation. When this detector is used in a X-ray system, a low-cost system capable of photon counting can be made.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.11
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• pp.857-867
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• 2018

Active array radar is evolving into digital active array radar. Digital active array radar has many advantages for making several simultaneous radar beams from the digital receive data of each element. A digital-type transceiver(TR) module is suitable for this goal in radar. In this work, the design results of an L-band digital TR module are presented to verify the possibility of fabrication for a digital active array antenna. This L-band digital TR module consists of a gallium-nitride-type HPA to achieve a more than 350-W peak output power and one-chip transceivers that include a digital waveform generator and analog digital converter. The receiving gain was 47 dB, the noise figure was less than 2 dB, and the final output type of the four channel receiving paths was one optic signal.

• Journal of IKEEE
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• v.23 no.2
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• pp.425-430
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• 2019

This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.4
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• pp.149-153
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• 2019

HVPE is one of the GaN single crystal manufacturing methods which has been commercially widely used due to its high growth rate. HVPE method consists of a number of processes, in particular the nitridation of the substrate prior to GaN growth has a significant effect on the crystalline quality of the manufactured GaN single crystal. In this study, we investigated the effect of nitridation for crystalline quality of GaN when it was grown on the sapphire substrate. The whole growth conditions except for the nitridation process were the same, and the gas flow rate supplied to the sapphire substrate was variously changed during the nitridation. Here, we examined the effect of nitridation via the surface characterization of GaN single crystal grown by HVPE.