Browse > Article
http://dx.doi.org/10.6111/JKCGCT.2019.29.4.149

A study on the nitridation of GaN crystal growth by HVPE method  

Lee, Seung Hoon (Division of Advanced Materials Science and Engineering, Hanyang University)
Lee, Joo Hyung (Division of Advanced Materials Science and Engineering, Hanyang University)
Lee, Hee Ae (Division of Advanced Materials Science and Engineering, Hanyang University)
Oh, Nuri (Division of Advanced Materials Science and Engineering, Hanyang University)
Yi, Sung Chul (Department of Chemical Engineering, Hanyang University)
Kang, Hyo Sang (Division of Advanced Materials Science and Engineering, Hanyang University)
Lee, Seong Kuk (AMES Micron Co. Ltd.)
Yang, Jae Duk (AMES Micron Co. Ltd.)
Park, Jae Hwa (AMES Micron Co. Ltd.)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.29, no.4, 2019 , pp. 149-153 More about this Journal
Abstract
HVPE is one of the GaN single crystal manufacturing methods which has been commercially widely used due to its high growth rate. HVPE method consists of a number of processes, in particular the nitridation of the substrate prior to GaN growth has a significant effect on the crystalline quality of the manufactured GaN single crystal. In this study, we investigated the effect of nitridation for crystalline quality of GaN when it was grown on the sapphire substrate. The whole growth conditions except for the nitridation process were the same, and the gas flow rate supplied to the sapphire substrate was variously changed during the nitridation. Here, we examined the effect of nitridation via the surface characterization of GaN single crystal grown by HVPE.
Keywords
Gallium nitiride; HVPE; Nitridation; Surface morphology; Hillock;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
1 D. Ehrentraut and Z. Sitar, "Advances in bulk crystal growth of AIN and GaN", MRS Bull. 34 (2009) 259.   DOI
2 H.M. Foronda, A.E. Romanov, E.C. Young, C.A. Robertson, G.E. Beltz and J.S. Speck, "Curvature and bow of bulk GaN substrates", J. Appl. Phys. 120 (2016) 035104.   DOI
3 J.H. Park, H.A. Lee, J.H. Lee, C.W. Park, J.H. Lee, H.S. Kang, S.H. Kang, S.Y. Bang, S.K. Lee and K.B. Shim, "Thickness optimization of the bulk GaN single crystal grown by HVPE processing variable control", J. Korean Cryst. Growth Cryst. Technol. 27 (2017) 89.   DOI
4 K. Fujito, S. Kubo, H. Nagaoka, T. Mochizuki, H. Namita and S. Nagao, "Bulk GaN crystals grown by HVPE", J. Cryst. Growth 311 (2009) 3011.   DOI
5 H.A. Lee, J.H. Park, J.H. Lee, C.W. Park, H.S. Kang, J.H. In and K.B. Shim, "The industrial trends of GaN substrates on the power electronic semiconductors", J. Korean Cryst. Growth Cryst. Technol. 28 (2018) 159.   DOI
6 E. Richter, Ch. Hennig, M. Weyers, F. Habel, J.D. Tsay, W.Y. Liu, P. Bruckner, F. Scholz, Yu. Makarov, A. Segal and J. Kaeppeler, "Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE", J. Cryst. Growth 277 (2005) 6.   DOI
7 X. Liu, D. Li, X. Sun, Z. Li, H. Song, H. Jiang and Y. Chen, "Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN", CrystEngComm. 16 (2014) 8058.   DOI
8 K. Hiramatsu, S. Itoh, H. Amano, I. Akasaki, N. Kuwano, T. Shiraishi and K. Oki, "Growth mechanism of GaN grown on sapphire with AlN buffer layer by MOVPE", J. Cryst. Growth 115 (1991) 628.   DOI
9 K. Uchida, A. Watanabe, F. Yano, M. Kouguchi, T. Tanaka and S. Minagawa, "Nitridation process of sapphire substrate surface and its effect on the growth of GaN", J. Appl. Phys. 79 (1996) 3487.   DOI
10 G. Namkoong, W.A. Doolittle, A.S. Brown, M. Losurdo, P. Capezzuto and G. Bruno, "Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics", J. Appl. Phys. 91 (2002) 2499.   DOI
11 M.S. Lee, D. Mikulik and S.S. Park, "Thick GaN growth via GaN nanodot formation by HVPE", Cryst. Eng. Comm. 19 (2017) 930.   DOI