• Proceedings of the KIPE Conference
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• 2014.11a
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• pp.197-198
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• 2014

본 논문에서는 Si MOSFET을 차세대 반도체인 GaN FET(Gallium Nitride Field Effect Transistor)으로의 대체 할 시 발생하는 문제점을 분석한다. 다양한 전력변환 시스템에 적용 가능한 위상 천이 풀브리지(Phase Shifted Full Bridge) DC-DC 컨버터를 대상으로 각각 Si MOSFET 및 GaN FET를 적용하고 실험을 통해 문제점을 확인 및 분석한다.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.497-501
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• 1989

The mechanisms of the meltback etching and regrowth processes are studied experimentally. The method to reduce the anisotropy and elliminate the gallium islands in the processes are developed. It is possible to fabricate the GaAs optical devices by the use of the process.

• 전기의세계
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• v.11
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• pp.14-17
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• 1963

정확하게 control된 pulse의 용도는 과학과 공업이 발달될수록 날로 많아져 가고 있는데 그의 일부는 대전력을 취급하는 경우로서, Radar에 대한 응용을 들 수 있다. 한편, 요지음 gallium-arsenide등 반도체 diode를 사용해서 Laser action을 일으킬 수 있다는것이 발견되어 G.E. 및 IBM등에서 개발되고 있다. 이 경우에, continuous emission도 가능하지만 흔히, intermittent operation을 시켜야 할 때가 많기 때문에 timed pulse source가 필요하게 된다. 또 한편, spot welding의 경우에도 이러한 pulse source가 필요하게 된다. 이들을 크게 나누어 source를 AC로 할 경우와 DC로 할 경우가 있는데, 전자의 경우는 thyratron을 사용할 경우가 많게 될 것이다. DC의 경우나 AC의 경우에나 잘 shape되고 time된 pulse source를 만들어 놓으면 진공관이나 thyratron이나 같은 모양으로 drive할 수 (thyratron의 경우는 trigger)있을 것이기 때문에, 이러한 pulse source를 만들 필요가 있게 된다.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.107-107
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• 2007

• Solar Energy
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• v.8 no.2
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• pp.73-76
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• 1988

Thick films based on the mature crystalline silicon technology are expected to exhibit eversmaller cost reduction. The thin-film-based technology is, however, expected to exhibit a much sharper drop in cost as it develops. In this report, technology and recent R & D of thin film solar cell, such as amorphous silicon, cadnium telluride, copper indium diselenide and gallium arsenide, are described. Perspectives of world photovoltaic market and solar cell price are also described.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.324-325
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• 2018

본 논문에서는 GaN(Gallium Nitride) HEMT를 적용한 300W급 자기유도 방식 무선전력전송 시스템을 설계 및 구현한다. GaN HEMT의 물성적 특성을 고려하여 무선전력전송 시스템을 설계하며 이를 검증하기 위해 300W급 Prototype 무선전력전송 시스템을 구현하고 Simulation과 실험을 통해 논문에서 제시한 설계과정의 타당성을 검증한다.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.139-141
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• 2015

Contact resistance of interface between the channel layers and various S/D electrodes was investigated by transmission line method. Different electrodes such as Ti/Au, a-IZO, and multilayer of a-IGZO/Ag/a-IGZO were compared in terms of contact resistance, using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes showed good performance and low contact resistance due to the homo-junction with channel layer.

• Journal of Magnetics
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• v.10 no.3
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• pp.108-112
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• 2005

GaAs nanowires were grown on GaAs (111)B substrates in a gas source molecular beam epitaxy system, using self-assembled Au particles with diameters between 25 and 200 nm as the catalytic agents. The growth rate and structure of the nanowires were investigated for substrate temperatures between 500 and $600^{\circ}C$ to study the mass transport mechanisms that drive the growth of these crystals. The possibilities for fabrication of novel magnetic nanostructures by suitable choice of growth conditions are discussed.

• Journal of Magnetics
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• v.5 no.1
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• pp.1-3
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• 2000

We have theoretically investigated changes in reflection coefficients induced by misfit strain located near the interface between an iron-yttrium garnet magnetic film and a nonmagnetic gadolinium-gallium garnet substrate in a transverse magneto-optical configuration.

• Journal of Semiconductor Engineering
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• v.2 no.1
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• pp.119-124
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• 2021

Along with the needs for feasibility in the field of space applications, interests in radiation-hardened electronics is growing rapidly. Gallium nitride (GaN)-based devices have been widely researched so far owing to superb radiation resistance. Among them, research on the most abundant protons in low earth orbit (LEO) is essential. In this paper, proton irradiation effects on parameter changes, degradation mechanism, and correlation with reliability of GaN-based devices are summarized.