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http://dx.doi.org/10.4313/TEEM.2015.16.3.139

Investigation on Contact Resistance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors with Various Electrodes by Transmission Line Method  

Lee, Sang Yeol (Department of Semiconductor Engineering, Cheongju University)
Publication Information
Transactions on Electrical and Electronic Materials / v.16, no.3, 2015 , pp. 139-141 More about this Journal
Abstract
Contact resistance of interface between the channel layers and various S/D electrodes was investigated by transmission line method. Different electrodes such as Ti/Au, a-IZO, and multilayer of a-IGZO/Ag/a-IGZO were compared in terms of contact resistance, using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes showed good performance and low contact resistance due to the homo-junction with channel layer.
Keywords
Amorphous oxide semiconductor; Source and drain electrode; a-IGZO; Transparent conductive oxide;
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