• Journal of the Optical Society of Korea
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• v.17 no.1
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• pp.97-102
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• 2013

Frequency tuning characteristics of a THz-wave by varying phase-matching angle and pump wavelength in a noncollinear phase-matching THz-wave parametric oscillator (TPO) are analyzed. A novel scheme to realize the tuning of a THz-wave by moving the cavity mirror forwards and backwards is proposed in a noncollinear phase-matching TPO. The parametric gain coefficients of the THz-wave in a $LiNbO_3$ crystal are explored under different working temperatures. The relationship between the poling period of periodically poled $LiNbO_3$ (PPLN) and the THz-wave frequency under the condition of a quasi-phase-matching configuration is deduced. Such analyses have an impact on the experiments of the TPO.

• ETRI Journal
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• v.38 no.5
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• pp.962-971
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• 2016

A wireless power transfer (WPT) system is generally designed with the optimum source and load impedance in order to achieve the maximum power transfer efficiency (PTE) at a specific coupling coefficient. Empirically or intuitively, however, it is well known that a high PTE can be attained by adjusting either the source or load impedance. In this paper, we estimate the maximum achievable PTE of WPT systems with the given load impedance, and propose the condition of source impedance for the maximum PTE. This condition can be reciprocally applied to the load impedance of a WPT system with the given source impedance. First, we review the transducer power gain of a two-port network as the PTE of the WPT system. Next, we derive two candidate conditions, the critical coupling and the optimum conditions, from the transducer power gain. Finally, we compare the two conditions carefully, and the results therefore indicate that the optimum condition is more suitable for a highly efficient WPT system with a given load impedance.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.6
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• pp.401-406
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• 2018

In this paper, we present E-band bond-wire modeling and a matching network to compensate for the effect of the bond-wire. The impedance of the bond-wires is extracted using three-dimensional electromagnetic simulation. The matching network was designed using a simple structure. The implemented matching network was verified with a commercial 71~81 GHz LNA IC and an interconnection based on the WR-12 waveguide. The matching network increases the transmission coefficient of the system by up to 4.5 dB, power gain by up to 3.12 dB, $P_{1dB}$ by up to 2.2 dB, and improves the gain flatness by ${\pm}1.07dB$.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.6
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• pp.247-252
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• 2003

In this paper, we have designed and fabricated a broadband 2-stage MMIC amplifier. Broadband characteristics could be obtained by compensated matching networks in a 2-stage amplifier design. This method is compensating low gains at lower frequencies in the 1st-stage with higher gains at lower frequencies in the 2nd- stage and then finally flat gains are obtained in the wide frequency ranges. Also, we have obtained not only broadband characteristics but also high gain using compensation matching network. The fabricated amplifier is measured by attaching on the test PCB(Printed Circuits Board). The measurement results are bandwidth of 1.1~2.8 GHz, S$_{21}$ gain of 11.1$\pm$0.3 ㏈ and P1㏈ of 12.6 ㏈m at 2.4 GHz.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.9
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• pp.1344-1350
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• 1990

A design method of ultra-broadband microwave amplifier is presented. A lossy network is represented as the combination of a serial impedance component and a parallel admittance component, and the realizable ranges of the gain and the reflection coefficients are derived with the components connected to the input, output or interstage network. The matching network has been designed by using the serial and parallel immittance loci which have the constant gain or reflection coefficients within the realizable ranges. Using the proposed method, deisgn examples of ultra-broadband amplifiers operating from dc to 12GHz frequency range are presented.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.11-17
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• 1998

In this paper, the synthesis procedufe of impedance matching network is presented for broad-band microwave amplifier design, whereby amplifier operating in the octave bandwidth is designed and fabricated in detail. The transfer function of the matching netowrks is synthesized by chebyshev approximation and element values for the networks of specified topology are calculatd for various MILs and ripples. After the transistor is modeled by negative-image device model, the synthesis procedure for matching networks is applied to broad-band amplifier design which has electrical performance of about 12dB gain in 4 to 8GHz range. Experimental results obtained from the fabricated amplifier are shown to approach the electrical performance designed in the given frequency range. Construction of the impedance matching networks by transfer function synthesis is very useful method for the design of broad-band microwave amplifiers.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.3
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• pp.34-42
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• 1993

An analytic approach to wide-band amplification using simplified equivalent MESFET modeling has enabled an ultrabroad-band flat-gain amplifier from DC to microwave. The developed lossy-match ultrabroad-band amplifier operates as a RC coupled circuit in the low-frequency range and lossless impedance matching circuit in the microwave frequency range with gain compensation circuits. The reduced gain caused by external resistors is compensated using 2-stage cascade amplification, and the gain of designed unit is 12.5.+-.1dB from the vicinity of DC to 7GAz. The experimental gain characteristics are good agreement with computer simulated results. The input and output VSWRs are measured under 2:1 over the operating frequency range, and the gain goes down over 15dBrange with various gate bias voltages.

• ETRI Journal
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• v.38 no.3
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• pp.568-578
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• 2016

A wireless power transfer (WPT) system is usually classified as being of either a two-coil or four-coil type. It is known that two-coil WPT systems are suitable for short-range transmissions, whereas four-coil WPT systems are suitable for mid-range transmissions. However, this paper reveals that the two aforementioned types of WPT system are alike in terms of their performance and characteristics, differing only when it comes to their matching-network configurations. In this paper, we first find the optimum load and source conditions using Z-parameters. Then, we estimate the maximum power transfer efficiency under the optimum load and source conditions, and we describe how to configure the matching networks pertaining to both types of WPT system for the given optimum load and source conditions. The two types of WPT system show the same performance with respect to the coupling coefficient and load impedance. Further, they also demonstrate an identical performance in the two cases considered in this paper, that is, a strong-coupled case and a weak-coupled case.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.3
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• pp.891-895
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• 2010

A dual-band (UHF: 470-862 MHz, L: 1452-1492 MHz) digital video broadcasting-handheld (DVB-H) antenna is presented. The proposed antenna is composed of a planar inverted F-shape antenna (PIFA) with an input impedance matching circuit. The matching circuit improves antenna performance in the broad UHF bands (470-862 MHz: 63%). The proposed antenna has omni-directional patterns and sufficient gain (Ave. peak gain is about 1.70 dBi over 470-862 MHz) for the PMP applications. The antenna is contact with a PMP case (${\varepsilon}_r=3.2$) which is used as a substrate for the size reduction and compact design.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.5
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• pp.16-21
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• 2012

For CMOS based bipolar junction transistor (BJT), a novel BJT structure which has higher matching property than conventional BJT structure was proposed and analyzed. The proposed structure shows a slight decrease of collector current density, $J_C$ about 0.361% and an increase of current gain, ${\beta}$ about 0.166% compared with the conventional structure. However, the proposed structure shows a decrease of area about 10% the improvement of matching characteristics of collector current ($A_{IC}$) and current gain ($A_{\beta}$) about 45.74% and 38.73% respectively. The improved matching characteristic of proposed structure is believed to be mainly due to the decreased distance between two emitters of pair BJTs, which results in the decreased effect of deep n-well of which resistance has the higher standard deviation than the other resistances.