• Journal of the Institute of Convergence Signal Processing
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• v.11 no.3
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• pp.189-196
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• 2010

In this paper, we proposed the adaptive local sigma filter reducing noises generated by an image sensor. The small noises generated by the image sensor are amplified by increased an analog gain and an exposure time of the image sensor together with information. And the goal of this work was the system design that is reduce the these amplified noises. Edge data are extracted by Flatness Index Map algorithm. We made the threshold adaptively changeable by the luminance average in this algorithm that extracts the edge data not in high luminance, but just low luminance. The Local Sigma Filter performed only about the edge pixel that were extracted by Flatness Index Map algorithm. To verify the performance of the designed filter, we made the Window test program. The hardware was designed with HDL language. We verified the hardware performance of Local Sigma Filter system using FPGA Demonstration board and HD image sensor, $1280{\times}720$ image size and 30 frames per second.

• Journal of electromagnetic engineering and science
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• v.18 no.3
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• pp.188-198
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• 2018

In this study, we propose an approach for the design and satisfy the requirements of the fabrication of a small, lightweight, reliable, and stable ultra-wideband receiver for millimeter-wave bands and the contents of the approach. In this paper, we designed and fabricated a stable receiver with having low noise figure, flat gain characteristics, and low noise characteristics, suitable for millimeter-wave bands. The method uses the chip-and-wire process for the assembly and operation of a bare MMIC device. In order to compensate for the mismatch between the components used in the receiver, an amplifier, mixer, multiplier, and filter suitable for wideband frequency characteristics were designed and applied to the receiver. To improve the low frequency and narrow bandwidth of existing products, mathematical modeling of the wideband receiver was performed and based on this spurious signals generated from complex local oscillation signals were designed so as not to affect the RF path. In the ultra-wideband receiver, the gain was between 22.2 dB and 28.5 dB at Band A (input frequency, 18-26 GHz) with a flatness of approximately 6.3 dB, while the gain was between 21.9 dB and 26.0 dB at Band B (input frequency, 26-40 GHz) with a flatness of approximately 4.1 dB. The measured value of the noise figure at Band A was 7.92 dB and the maximum value of noise figure, measured at Band B was 8.58 dB. The leakage signal of the local oscillator (LO) was -97.3 dBm and -90 dBm at the 33 GHz and 44 GHz path, respectively. Measurement was made at the 15 GHz IF output of band A (LO, 33 GHz) and the suppression characteristic obtained through the measurement was approximately 30 dBc.

• ETRI Journal
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• v.39 no.1
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• pp.51-61
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• 2017

This paper demonstrates a systematic approach for the design of broadband, high efficiency, high power, Class-AB RF amplifiers with high gain flatness. It is usually difficult to simultaneously achieve a high gain flatness and high efficiency in a broadband RF power amplifier, especially in a high power design. As a result, the use of a computer-aided simulation is most often the best way to achieve these goals; however, an appropriate initial value and a systematic approach are necessary for the simulation results to rapidly converge. These objectives can be accomplished with a minimum of trial and error through the following techniques. First, signal gain variations are reduced over a wide bandwidth using a proper pre-matching network. Then, the source and load impedances are satisfactorily obtained from small-signal and load-pull simulations, respectively. Finally, two high-order Chebyshev low-pass filters are employed to provide optimum input and output impedance matching networks over a bandwidth of 100 MHz-500 MHz. By using an EM simulation for the substrate, the simulation results were observed to be in close agreement with the measured results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.189-193
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• 2005

In this paper, we propose a direct conversion double-balanced down-converter fer MB-OFDM W system, which is implemented using $0.18\;{\mu}m$ CMOS technology and its measurement results are shown. The proposed down-converter adopts a resistive current-source instead of general transconductance stage using MOS transistor to achieve wideband characteristics over RF input frequency band $3\~5\;GHz$ with good gain flatness. The measured conversion gain is more than +3 dB, and gain flatness is less than 3 dB for three UWB channels. The dc consumption of this work is only 0.89 mA from 1.8 V power supply, leading to the low-power W application.

• Korean Journal of Optics and Photonics
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• v.20 no.5
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• pp.261-265
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• 2009

Our amplifier using an all optical method and a fixed GFF achieved automatic gain flatness throughput the C-band without any NF degradation, and simultaneously achieved a constant 25 dB gain, while input signals were varied between one channel and forty WDM channels. When thirty nine channels were added and dropped, the transient gain variation of the survival channel was not greater than the steady-state gain variation, and its wavelength dependency was negligible.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.8 no.2
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• pp.90-95
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• 2009

All-optical fiber-type gain flattening filer (GFF) for an EDFA (Erbium doped fiber amplifier) were fabricated by using a FBT (fiber biconical tapered) process and the performance of the GFF was tested and athermal package was proposed. Historically, the chief contributor to gain unevenness has been the EDFA. Due to the inherent gain response of the EDFA's operation, there is always a modest imbalance in the gain applied as a function of wavelength. FBT methods have been used to make fiber type couplers and WDM filter since 1980. Attractivity of this methods was simple, cost effective and thermal stability. Simulation program tool is made to design target GFF profile for this paper. Fiber coupler manufacturing machine is modified for the GFF process. The final GFF is obtained by cascading 4 unit filter that has 6 taper stage. Test result shows 1 dB of wavelength flatness in the C band. Polarization dependent loss is under 0.15dB. The center wavelength variation is below ${\pm}$0.35nm at the temperature range of $20^{\circ}C$ to $70^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.25-33
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• 1997

In the design of microwave multi-stage amplifiers composed of N amplifier modules, the variation of performances of amplifier as various connection length between modules has been studied. In addition, the methods, equations and conditions for the maximum gain or the most flat gain are presented. The results of sensitivity analysis for the connection length showed that the small change in phase of input, output reflection coefficients(S$_{11}$, S$_{22}$) of module itself is the most important in determination of connection length for the most flat gain. Th egain flatness of 2-module amplifier of which connection length between modules had been determined by presented methods was the best one out of performances with various arbitrary connectio lengths.s.

• Proceedings of the KIEE Conference
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• 2007.10a
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• pp.193-194
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• 2007

This paper presents the design of a power amplifier for full-band UWB application systems using a CMOS 0..18um technology. A wideband RLC filter and a multilevel RLC matching scheme are utilized to achieve the wideband input/output matching. Both the cascade and cascode stage are used to increase the gain and to achieve gain flatness. Simulation results show that the designed amplifier provides a power gain greater than 10 dB throughout the UWB full-band(3.1-10.6GHz) and an input P1dB of -1.2dBm at 6.9GHz. It consumes 35.8mW from a 1.8V supply.

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.451-454
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• 2002

In this paper, a low-noise amplifier is designed and fabricated using the HJFET for the reception of the Ku-band satellite broadcast signals. The optimum input and output reflection coefficients of each amplifier stage are obtained by the trade-off between the stable gain and the noise figure circle. The amplifier performance is simulated and optimized using a microwave CAD software. The designed amplifier is fabricated and tested. Results of the test show a gain of 17.0 dB, a gain flatness of less than $\pm$2.BdB, the noise figure of less than 1.0 dB, and the input and output reflection coefficient of less than -10 dB.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.84-87
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• 2000

In this paper, a high gain-broad bandwidth MMIC distributed amplifier was designed using cascaded single section distributed amplifier configuration. The PHEMT for this studies was fabricated at our lab The PHEMT has a 0.2 $\mu\textrm{m}$ gate length. a 80 $\mu\textrm{m}$ unit gate width and 4 gate fingers. A designed MMIC amplifier have higher S$\sub$21/ gain than the common distributed amplifier using the same number of active devices. From the simulated result, we obtained that the S$\sub$21/ gain of DC ∼ 20 GHz bandwidth was 15.6 dB and flatness was ${\pm}$0.9 dB, and input and output reflection coefficient were lower than -8 dB. The simulated gain shows an improvement 7.3 dB compared with those of conventional distributed amplifier. And the chip size is 2.0 ${\times}$ 1.2 $\textrm{mm}^2$.