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A Wideband Down-Converter for the Ultra-Wideband System  

Kim Chang-Wan (Wireless Home Network Research Team, ETRI)
Lee Seung-Sik (Wireless Home Network Research Team, ETRI)
Park Bong-Hyuk (Wireless Home Network Research Team, ETRI)
Kim Jae-Young (Wireless Home Network Research Team, ETRI)
Choi Sang-Sung (Wireless Home Network Research Team, ETRI)
Lee Sang-Gug (School of Engineering, Information and Communications University)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.16, no.2, 2005 , pp. 189-193 More about this Journal
Abstract
In this paper, we propose a direct conversion double-balanced down-converter fer MB-OFDM W system, which is implemented using $0.18\;{\mu}m$ CMOS technology and its measurement results are shown. The proposed down-converter adopts a resistive current-source instead of general transconductance stage using MOS transistor to achieve wideband characteristics over RF input frequency band $3\~5\;GHz$ with good gain flatness. The measured conversion gain is more than +3 dB, and gain flatness is less than 3 dB for three UWB channels. The dc consumption of this work is only 0.89 mA from 1.8 V power supply, leading to the low-power W application.
Keywords
Utra-Wideband; UWB; CMOS; Down-Converter; Mixer;
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  • Reference
1 Paul R. Gray, Paul J. Hurst, Stephen H. Lewis, and Robert G. Meyer, Analysis, and Design of Analog Integrated Circuits, Fourth Edition, John Wiley & Sons, Inc., 2001
2 Ramesh Harjani, Jackson Harvey, and Robert Sainati, 'Analog/RF physical layer issues for UWB systems', VLSI Design, 2004. Proceeding 17th International Conference on 2004, pp. 941-948, 2004   DOI
3 http://grouper.ieee.org/groups/802/15/