• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1069-1077
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• 2011

In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optimum impedances for power amplifier design were extracted using the custom tuning jig composed of tunable passive components. The class-F power amplifier are designed based on EM co-simulation of impedance matching circuit. The matching circuit is realized in SAAO substrate. For integration and matching in the small package module, spiral inductors and single layer capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 40 % and harmonic suppression above 30 dBc for the second(2nd) and the third(3rd) harmonic at the output power of 8 W.

• Journal of the Korea Convergence Society
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• v.8 no.11
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• pp.313-319
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• 2017

In this paper, we present a design technique that miniaturises the DC-DC converter, a key component in the electric vehicle system, using the advanced material (Ga-N HEMT) in the LLC resonant converter and freely changes the resonant frequency. This design is also proposed to improve the efficiency and temperature characteristics by adding SR Topology in the secondary side output during the operation of power supply. In this experiment, as a consequence of the constructed circuit with the operation of high switching frequency of 200 kHz, the size of LLC and PFC was able to be minimised by 40[%]. Thus, the characteristics of operating temperature demonstrated $60-65^{\circ}C$ without a heat sink, when the temperature was measured at 250W (12V/20A). The features were all due to the advantages of the change of switching frequency, switching circuits implementation, and the maximisation of switching frequency. Based on these design results, we would like to implement more than 1 [kW].

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.4
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• pp.290-298
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• 2018

Herein, an S-band internally-matched power amplifier that shows a power capability of 300 W in a Long Term Evolution(LTE) band 7 is designed and fabricated using a CGHV40320D GaN HEMT from Wolfspeed. Based on the nonlinear model, the optimum source and load impedance are extracted from the source-pull and load-pull simulations at the fundamental and harmonic frequencies, and the harmonic impedance tuning circuits are implemented inside a ceramic package. The internally matched power amplifier, which is fabricated using a thin-film substrate with a high relative permittivity of 40 and an RF35TC PCB substrate, is measured at the pulsed condition with a pulse period of 1 ms and a duty cycle of 10%. The measured results show a maximum output power of 257~323 W, a drain efficiency of 64~71%, and a power gain of 11.5~14.0 dB at 2.62~2.69 GHz. The LTE-based measurement shows a drain efficiency of 42~49% and an ACLR of less than -30 dBc(excluding 2.62 GHz) at an average power of 79 W.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.4
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• pp.67-72
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• 2022

This study presents the design of power amplifier (PA) in 60 nm GaN/Si HEMT technology. A customized transistor model enables the designing circuits operating at W-band. The all matching network of the PA was composed of equivalent transformer circuit to reduce matching loss. And then, equivalent transformer is several advantages without any additional inductive devices so that a wideband power characteristic can be achieved. The designed die area is 3900 ㎛ × 2300 ㎛. The designed results at center frequency achieved the small signal gain of 15.9 dB, the saturated output power (Psat) of 29.9 dBm, and the power added efficiency (PAE) of 24.2% at the supply voltage of 12 V.

• Journal of Power Electronics
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• v.15 no.6
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• pp.1489-1498
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• 2015

Gallium nitride (GaN)-based power switching devices, such as high-electron-mobility transistors (HEMT), provide significant performance improvements in terms of faster switching speed, zero reverse recovery, and lower on-state resistance compared with conventional silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET). These benefits of GaN HEMTs further lead to low loss, high switching frequency, and high power density converters. Through simulation and experimentation, this research thoroughly contributes to the understanding of performance characterization including the efficiency, loss distribution, and thermal behavior of a 160-W GaN-based synchronous boost converter under various output voltage, load current, and switching frequency operations, as compared with the state-of-the-art Si technology. Original suggestions on design considerations to optimize the GaN converter performance are also provided.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.1
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• pp.53-61
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• 2014

In this paper, we present the design, fabrication and measurement of high efficiency GaN HEMT power amplifier using harmonic matching technique. In order to achieve high efficiency, harmonic load-pull simulation is performed, that is, the optimum load impedances are determined at $2^{nd}$ and $3^{rd}$ harmonic frequencies as well as at the fundamental. Then, the output matching circuit is designed based on harmonic load-pull simulation. The measurement of the fabricated power amplifier shows the linear gain of 20 dB and $P_{1dB}$(1 dB gain compression point) of 33.7 dBm at 1.85 GHz. The maximum power added efficiency(PAE) of 80.9 % is achieved at the output power of 38.6 dBm, which belongs to best efficiency performance among the reported high efficiency power amplifiers. For W-CDMA input signal, the power amplifier shows a PAE of 27.8 % at the average output power of 28.4 dBm, where an ACLR (Adjacent Channel Leakage Ratio) is measured to be -38.8 dBc. Digital predistortion using polynomial fitting was implemented to linearize the power amplifiers, which allowed about 6.2 dB improvement of an ACLR performance.

• Proceedings of the KIPE Conference
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• 2019.11a
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• pp.52-54
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• 2019

본 논문에서는 Anyplace Induction Cooktop 시스템의 설계 방안을 제시한다. 다수의 워킹코일이 적용된 Anyplace 시스템은 전력밀도 향상을 위해 고주파 동작이 필요하다. 따라서 시뮬레이션 및 수학적 계산을 통한 동작 주파수, 전력 반도체 소자 조건 별 시스템의 손실 및 부피 간 Trade-off 분석이 필요하다 따라서 분석 결과를 토대로 각 전력반도체 소자 기반 시스템의 적합한 동작 주파수 영역 및 공진 네트워크 설계 방안을 제시한다.

• Journal of Electrical Engineering and Technology
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• v.8 no.5
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• pp.1157-1162
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• 2013

We proposed AlGaN/GaN high-electron-mobility transistors (HEMTs) using thermal oxidation for NiOx passivation. Auger electron spectroscopy, secondary ion mass spectroscopy, and pulsed I-V were used to study oxidation features. The oxidation process diffused Ni and O into the AlGaN barrier and formed NiOx on the surface. The breakdown voltage of the proposed device was 1520 V while that of the conventional device was 300 V. The gate leakage current of the proposed device was 3.5 ${\mu}A/mm$ and that of the conventional device was 1116.7 ${\mu}A/mm$. The conventional device exhibited similar current in the gate-and-drain-pulsed I-V and its drain-pulsed counterpart. The gate-and-drain-pulsed current of the proposed device was about 56 % of the drain-pulsed current. This indicated that the oxidation process may form deep states having a low emission current, which then suppresses the leakage current. Our results suggest that the proposed process is suitable for achieving high breakdown voltages in the GaN-based devices.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.3
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• pp.283-289
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• 2014

This paper carries out a series of analysis of power system using Gallium Nitride (GaN) FET which has wide band gap (WBG) characteristics comparing to conventional Si MOSFET-used power system. At first, for comparison of each semiconductor device, the switching-transient parameter is quantitatively extracted from released information of GaN FET. And GaN FET model which reflect this dynamic property is configured. By using this model, the performance of GaN FET is analyzed comparing to Si MOSFET. Also, in order to enable a representative assessment on the power system level, Si MOSFET and GaN FET are applied to the most common structure of power system, full-bridge, and each power systems are compared based on various criteria, such as performance, efficiency and power density. The entire process is verified with the aid of mathematical analysis and simulation.

• Journal of Power Electronics
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• v.9 no.1
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• pp.36-42
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• 2009

This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device's capability and characteristics in applications using the GaN power converter design.