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http://dx.doi.org/10.5515/KJKIEES.2018.29.4.290

S-Band 300-W GaN HEMT Harmonic-Tuned Internally-Matched Power Amplifier  

Kang, Hyun-Seok (Department of Radio Science and Engineering, Chungnam National University)
Lee, Ik-Joon (Department of Radio Science and Engineering, Chungnam National University)
Bae, Kyung-Tae (Department of Radio Science and Engineering, Chungnam National University)
Kim, Seil (Department of Radio Science and Engineering, Chungnam National University)
Kim, Dong-Wook (Department of Radio Science and Engineering, Chungnam National University)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.29, no.4, 2018 , pp. 290-298 More about this Journal
Abstract
Herein, an S-band internally-matched power amplifier that shows a power capability of 300 W in a Long Term Evolution(LTE) band 7 is designed and fabricated using a CGHV40320D GaN HEMT from Wolfspeed. Based on the nonlinear model, the optimum source and load impedance are extracted from the source-pull and load-pull simulations at the fundamental and harmonic frequencies, and the harmonic impedance tuning circuits are implemented inside a ceramic package. The internally matched power amplifier, which is fabricated using a thin-film substrate with a high relative permittivity of 40 and an RF35TC PCB substrate, is measured at the pulsed condition with a pulse period of 1 ms and a duty cycle of 10%. The measured results show a maximum output power of 257~323 W, a drain efficiency of 64~71%, and a power gain of 11.5~14.0 dB at 2.62~2.69 GHz. The LTE-based measurement shows a drain efficiency of 42~49% and an ACLR of less than -30 dBc(excluding 2.62 GHz) at an average power of 79 W.
Keywords
GaN HEMT; Power Amplifier; Internally Matched; S-Band; Harmonic Tuning;
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