• JSTS:Journal of Semiconductor Technology and Science
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• 제15권4호
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• pp.501-505
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• 2015

In this paper, we demonstrated a 4W power amplifier monolithic microwave integrated circuit (MMIC) for Ku-band satellite communication applications. The used device technology relies on $0.25{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT) process. The 4W power amplifier MMIC has linear gain of over 30 dB and saturated output power of over 36.1 dBm in the frequency range of 13.75 GHz ~ 14.5 GHz. Power added efficiency (PAE) is over 30 %.

• Journal of electromagnetic engineering and science
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• 제4권1호
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• pp.37-42
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• 2004

In this paper, LNB(low noise block) downconverter MMIC is designed for Ku-band satellite communication system using InGaP/GaAs HBT high linear process. Designed MMIC consists of low noise amplifier, double balanced mixer, and IF amplifier with a total chip area of 2.6${\times}$1.1 $\textrm{mm}^2$. Designed MMIC has the characteristics of over 37.5 ㏈ conversion gain, 14 ㏈ noise figure, ripple of 3 ㏈, and output-referred $P_{1dB}$TEX>(1 ㏈ compression power) of 2.5 ㏈m with total power dissipation of 3 V, 50 mA.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권3호
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• pp.312-318
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• 2016

This paper presents a 2-6 GHz GaN HEMT power amplifier monolithic microwave integrated circuit (MMIC) with bridged-T all-pass filters and output-reactance-compensation shorted stubs using the $0.25{\mu}m$ GaN HEMT foundry process that is developed by WIN Semiconductors, Inc. The bridged-T filter is modified to mitigate the bandwidth degradation of impedance matching due to the inherent channel resistance of the transistor, and the shorted stub with a bypass capacitor minimizes the output reactance of the transistor to ease wideband load impedance matching for maximum output power. The fabricated power amplifier MMIC shows a flat linear gain of 20 dB or more, an average output power of 40.1 dBm and a power-added efficiency of 19-26 % in 2 to 6 GHz, which is very useful in applications such as communication jammers and electronic warfare systems.

• ETRI Journal
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• 제31권3호
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• pp.247-253
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• 2009

We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 ${\mu}m$ GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and power-added efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Ku-band high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권3호
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• pp.339-345
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• 2016

This paper presents a two-stage power amplifier MMIC using a $0.4{\mu}m$ GaN-HEMT process. The two-stage structure provides high gain and compact circuit size using an integrated inter-stage matching network. The size and loss of the inter-stage matching network can be reduced by including bond wires as part of the matching network. The two-stage power amplifier MMIC was fabricated with a chip size of $2.0{\times}1.9mm^2$ and was mounted on a $4{\times}4$ QFN carrier for evaluation. Using a downlink LTE signal with a PAPR of 6.5 dB and a channel bandwidth of 10 MHz for the 2.6 GHz band, the power amplifier MMIC exhibited a gain of 30 dB, a drain efficiency of 32%, and an ACLR of -31.4 dBc at an average output power of 36 dBm. Using two power amplifier MMICs for the carrier and peaking amplifiers, a Doherty power amplifier was designed and implemented. At a 6 dB back-off output power level of 39 dBm, a gain of 24.7 dB and a drain efficiency of 43.5% were achieved.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.47-54
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• 2003

New efficiency enhancement techniques have been devised and implemented to InGaP/GaAs HBT MMIC power amplifiers for W-CDMA mobile terminals applications. Two different types of bias current control circuits that select the efficient quiescent currents in accordance with the required output power levels are proposed for overall power efficiency improvement. A dual chain power amplifier with single matching network composed of two different parallel-connected power amplifier is also introduced. With these efficiency enhancement techniques, the implemented MMIC power amplifiers presents power added efficiency (PAE) more than 14.8 % and adjacent channel leakage ratio(ACLR) lower than -39 dBc at 20 dBm output power and PAE more than 39.4% and ACLR lower than -33 dBc at 28 dBm output power. The average power usage efficiency of the power amplifier is improved by a factor of more than 1.415 with the bias current control circuits and even up to a factor of 3 with the dual chain power amplifier.

• ETRI Journal
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• 제27권2호
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• pp.133-139
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• 2005

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 ${\mu}$ gate-length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2mm${\times}$ 2mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1mm${\times}$ 2mm. The frequency doubler achieved an output power of -6 dBm at 76.5 GHz with a conversion gain of -16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2mm ${\times}$ 1.2mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W-band.

• Journal of electromagnetic engineering and science
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• 제9권4호
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• pp.218-222
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• 2009

In this paper, we present a CPW-based 77 GHz 3-stage power amplifier MMIC for automotive radar systems. The power amplifier MMIC has been realized using a 130 nm $In_{0.88}$GaP/$In_{0.4}$AlAs/$In_{0.4}$GaAs metamorphic high-electron mobility transistors(mHEMTs) technology and an output stage with a cascode configuration. This produced a good output power and gain performance at 77 GHz. The fabricated power amplifier MMIC exhibited a small-signal gain of 18 dB, an output power of 17 dBm and 9 % power added efficiency(PAE) at 77 GHz with a total gate width of 800 ${\mu}m$ in the output stage. These performances could be useful to low-cost and small-sized components for 77 GHz automotive radar systems.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2000년도 종합학술발표회 논문집 Vol.10 No.1
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• pp.220-224
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• 2000

AlGaAs/GaAs HBT를 이용하여 1.9 GHz 대역 2단 MMIC 전력증폭기를 설계하였다. HBT의 실측 S 파라미터를 이용하여 정합회로를 설계하였으며, 목적에 따라 적절한 형태의 출력 정합 회로를 하이브리드 형태로 칩 외부에 부가할 수 있도록 설계하였다. HBT의 실측정 S 파라미터의 fitting을 통하여 비선형 등가모델을 추출하였고, load-pull 시뮬레이션으로 최대 출력 정합 임피던스를 결정하였다. 시뮬레이션 결과, 29 dBm의 출력 전력, 40 %의 전력 부가 효율, 그리고 16 dB의 전력 이득을 얻었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.609-610
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• 2006

A 77GHz MMIC transceiver module consisting of a power amplifier, a low noise amplifier, a drive amplifier, a frequency doubler and a down-mixer has been developed for automotive forward-looking radar sensor. The MMIC chip set was fabricated using $0.15{\mu}m$ gate-length InGaAs/InAlAs/GaAs mHEMT process based on 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20dB from $76{\sim}77GHz$ with 15.5dBm output power. The chip size is $2mm{\times}2mm$. The low noise amplifier achieved a gain of 20dB in a band between $76{\sim}77\;GHz$ with an output power of 10dBm. The chip size is $2.2mm{\times}2mm$. The driver amplifier exhibited a gain of 23dB over a $76{\sim}77\;GHz$ band with an output power of 13dBm. The chip size is $2.1mm{\times}2mm$. The frequency doubler achieved an output power of -16dBm at 76.5GHz with a conversion gain of -16dB for an input power of 10dBm and a 38.25GHz input frequency. The chip size is $1.2mm{\times}1.2mm$. The down-mixer demonstrated a measured conversion gain of over -9dB. The chip size is $1.3mm{\times}1.9mm$. The transceiver module achieved an output power of 10dBm in a band between $76{\sim}77GHz$ with a receiver P1dB of -28dBm. The module size is $8{\times}9.5{\times}2.4mm^3$. This MMIC transceiver module is suitable for the 77GHz automotive radar systems and related applications in W-band.