• Title/Summary/Keyword: GATE simulator

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New QECCs for Multiple Flip Error Correction (다중플립 오류정정을 위한 새로운 QECCs)

  • Park, Dong-Young;Kim, Baek-Ki
    • The Journal of the Korea institute of electronic communication sciences
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    • v.14 no.5
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    • pp.907-916
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    • 2019
  • In this paper, we propose a new five-qubit multiple bit flip code that can completely protect the target qubit from all multiple bit flip errors using only CNOT gates. The proposed multiple bit flip codes can be easily extended to multiple phase flip codes by embedding Hadamard gate pairs in the root error section as in conventional single bit flip code. The multiple bit flip code and multiple phase flip code in this paper share the state vector error information by four auxiliary qubits. These four-qubit state vectors reflect the characteristic that all the multiple flip errors with Pauli X and Z corrections commonly include a specific root error. Using this feature, this paper shows that low-cost implementation is possible despite the QECC design for multiple-flip error correction by batch processing the detection and correction of Pauli X and Z root errors with only three CNOT gates. The five-qubit multiple bit flip code and multiple phase flip code proposed in this paper have 100% error correction rate and 50% error discrimination rate. All QECCs presented in this paper were verified using QCAD simulator.

A comparison study of input ESD protection schemes utilizing NMOS transistor and thyristor protection devices (NMOS 트랜지스터와 싸이리스터 보호용 소자를 이용하는 입력 ESD 보호방식의 비교 연구)

  • Choi, Jin-Young
    • Journal of IKEEE
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    • v.13 no.1
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    • pp.19-29
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    • 2009
  • For two input ESD protection schemes utilizing the NMOS protection device or the lvtr_thyristor protection device, which is suitable for high-frequency CMOS ICs, we attempt an in-depth comparison study on the HBM ESD protection level in terms of lattice heating inside the protection devices and the peak voltage applied to the gate oxides in the input buffer through DC, mixed-mode transient, and AC analyses utilizing the 2-dimensional device simulator. For this purpose, we suggest a method for the equivalent circuit modeling of the input HBM test environment for the CMOS chip equipped with the input ESD protection circuit. And by executing mixed-mode simulations including up to four protection devices and analyzing the results for five different test modes, we attempt a detailed analysis on the problems which can be occurred in a real HBM test. In this procedure, we explain about the strength and weakness of the two protection schemes as an input protection circuit for high-frequency ICs, and suggest guidelines relating to the design of the protection devices.

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Modification of CPW Pad Design for High fmax InGaAs/InAlAs Metamorphic High Electron Mobility Transistors (높은 $f_{max}$ 를 갖는 InGaAs/InAlAs MHEMT 의 Pad 설계)

  • Choi, Seok-Gyu;Lee, Bok-Hyung;Lee, Mun-Kyo;Kim, Sam-Dong;Rhee, Jin-Koo
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.599-602
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    • 2005
  • In this paper, we have performed a study that modifies the CPW Pad configurations to improve an $f_{max}$ characteristic of metamorphic HEMT. To analyze the CPW Pad structures of MHEMT, we use the ADS momentum simulator developed by $Agilent^{TM}$. Comparing the employed structure (G/W = 40/100 m), the optimized structure (G/W = 20/25 m) of CPW MHEMT shows the increased $S_{21}$ by 2.5 dB, which is one of the dominant parameters influencing the $f_{max}$ of MHEMT. To compare the performances of optimized MHEMT with the employed MHEMT, DC and RF characteristics of the fabricated MHEMT were measured. In the case of optimized CPW MHEMT, the measured saturated drain current density and transconductance $(g_m)$ were 693 mA/mm and 647 mS/mm, respectively. RF measurements were performed in a frequency range of $0.1{\sim}110$ GHz. A high $S_{21}$ gain of 5.5 dB is shown at a millimeter-wave frequency of 110 GHz. Two kinds of RF gains, $h_{21}$ and maximum available gain (MAG), versus the frequency, and a cut-off frequency ($f_t$) of ${\sim}154$ GHz and a maximum frequency of oscillation ($f_{max}$) of ${\sim}358$ GHz are obtained, respectively, from the extrapolation of the RF gains for a device biased at a peak transconductance. An optimized CPW MHEMT structure is one of the first reports among fabricated 0.1 m gate length MHEMTs.

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Engineering Model Design and Implementation of Mass Memory Unit for STSAT-2 (과학기술위성 2호 대용량 메모리 유닛 시험모델 설계 및 구현)

  • Seo, In-Ho;Ryu, Chang-Wan;Nam, Myeong-Ryong;Bang, Hyo-Choong
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.33 no.11
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    • pp.115-120
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    • 2005
  • This paper describes the design and implementation of engineering model(EM) of Mass Memory Unit(MMU) for Science and Technology Satellite 2(STSAT-2) and the results of integration test. The use of Field-Programmable Gate Array(FPGA) instead of using private electric parts makes a miniaturization and lightweight of MMU possible. 2Gbits Synchronous Dynamic Random Access Memory(SDRAM) module for mass memory is used to store payload and satellite status data. Moreover, file system is applied to manage them easily in the ground station. RS(207,187) code improves the tolerance with respect to Single Event Upset(SEU) induced in SDRAM. The simulator is manufactured to verify receiving performance of payload data.

The novel NPLVTSCR ESD ProtectionCircuit without Latch-up Phenomenon for High-Speed I/O Interface (Latch-up을 방지한 고속 입출력 인터페이스용 새로운 구조의 NPLVTSCR ESD 보호회로)

  • Koo, Yong-Seo
    • Journal of IKEEE
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    • v.11 no.1 s.20
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    • pp.54-60
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    • 2007
  • In this study novel ESD protection device, namely, N/P-type Low Voltage Triggered SCR, has been proposed, for high speed I/O interface. Proposed device could lower high trigger voltage($\sim$20V) of conventional SCR and reduce latch-up phenomenon of protection device during the normal condition. In this Study, the proposed NPLVTSCR has been simulated using TMA MEDICI device simulator for electrical characteristic. Also the proposed device's test pattern was fabricated using 90nm TSMC's CMOS process and was measured electrical characteristic and robustness. In the result, NPLVTSCR has 3.2V $\sim$ 7.5V trigger voltage and 2.3V $\sim$ 3.2V holding voltage by changing PMOS gate length and it has about 2kV, 7.5A HBM ESD robustness(IEC61000-4-2).

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Analysis of subthreshold region transport characteristics according to channel doping for DGMOSFET using MicroTec (MicroTec을 이용한 DGMOSFET의 채널도핑에 따른 문턱전압이하영역 특성분석)

  • Han, Ji-Hyung;Jung, Hak-Kee;Lee, Jong-In;Jeong, Dong-Soo;Kwon, Oh-Shin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2010.10a
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    • pp.715-717
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    • 2010
  • In this paper, the subthreshold characteristics have been alanyzed using MicroTec4.0 for double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studing since it can reduce the short channel effects due to structural characteristics. We have presented the short channel effects such as subthreshold swing and threshold voltage for DGMOSFET, using MicroTec, semiconductor simulator. We have analyzed for channel length, thickness and width to consider the structural characteristics for DGMOSFET. The subthreshold swing and threshold voltage have been analyzed for DGMOSFET using MicroTec since MicroTec is well verified as comparing with results of the numerical three dimensional models.

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A Detailed Design Study on VDES Test Network Construction and Service Solution Development (VDES 시험망 구축 및 서비스 솔루션 개발에 관한 상세설계 연구)

  • CHOI, Seung-Hyun;KIM, Juntae;Park, Kaemyoung;JANG, Tae Hun;KIM, Pu Reum;JEONG, Woojin;SONG, Jae Min
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2019.11a
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    • pp.259-260
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    • 2019
  • Through Korean Smart-Navigation Project we are tasking with a VDES test network construction and service solution development. In this task, we design a structure that interoperates the VDES network with the service host/client simulator which is communication framework for efficient and reliable and seamless service. The proposed structure includes interface design between VDES test equipments which is VDES shore station, mobile station, gate way, service host and client. And detailed design includes message definition, interface design, operation scenario, equipment design and implementation for VDES test network. After implementing these test equipments with proposed design, we will firstly proceed the test equipment integration and interface test indoors for VDES test network. After fully verifing the VDES test network through indoor tests, we will construct the VDES shore station and mobile station and conduct the sea area tests by 2020.

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The Design and Implementation of a Graphical Education System on the Structure and the Operation of ALU (ALU 구조와 단계별 연산과정을 그래픽 형태로 학습하는 교육 시스템의 설계 및 구현)

  • Ahn, Syung-Og;Nam, Soo-Jeong
    • The Journal of Engineering Research
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    • v.2 no.1
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    • pp.31-37
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    • 1997
  • This paper describes the design and implementation of 8 bit ALU graphic simulator which helps students who study the structure and operation course of general ALU. ALU of this paper consists of three parts, arithmetic circuit, logic circuit, and shifter. Each of them performs as follows. Arithmetic circuit performs arithmetic operation such as addition, subtraction, 1 increment, 1 decrement, 2's complement, logic circuit performs logic operation such as OR, AND, XOR, NOT, and shifter performs shift operation and transfers the result of circuits of arithmetic, logic to data bus. The instructions which relate to these basic ALU functions was selected from Z80 instructions and ALU circuit was designed with those instructions and this designed ALU circuit was implemented on graphic screen. And all state of this data operation course in ALU was showed by bit and logic gate unit.

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A Study on 16 bit EISC Microprocessor (16 비트 EISC 마이크로 프로세서에 관한 연구)

  • 조경연
    • Journal of Korea Multimedia Society
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    • v.3 no.2
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    • pp.192-200
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    • 2000
  • 8 bit and 16 bit microprocessors are widely used in the small sited control machine. The embedded microprocessors which is integrated on a single chip with the memory and I/O circuit must have simple hardware circuit and high code density. This paper proposes a 16 bit high code density EISC(Extendable Instruction Set Computer) microprocessor. SE1608 has 8 general purpose registers and 16 bit fixed length instruction set which has the short length offset and small immediate operand. By using an extend register and extend flag, the offset and immediate operand in instruction could be extended. SE1608 is implemented with 12,000 gate FPGA and all of its functions have been tested and verified at 8MHz. And the cross assembler, the cross C/C++compiler and the instruction simulator of the SE1608 have been designed and verified. This paper also proves that the code density$.$ of SE1608 shows 140% and 115% higher code density than 16 bit microprocessor H-8300 and MN10200 respectively, which is much higher than traditional microprocessors. As a consequence, the SE1608 is suitable for the embedded microprocessor since it requires less program memory to any other ones, and simple hardware circuit.

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Systems Engineering Approach to develop the FPGA based Cyber Security Equipment for Nuclear Power Plant

  • Kim, Jun Sung;Jung, Jae Cheon
    • Journal of the Korean Society of Systems Engineering
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    • v.14 no.2
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    • pp.73-82
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    • 2018
  • In this work, a hardware based cryptographic module for the cyber security of nuclear power plant is developed using a system engineering approach. Nuclear power plants are isolated from the Internet, but as shown in the case of Iran, Man-in-the-middle attacks (MITM) could be a threat to the safety of the nuclear facilities. This FPGA-based module does not have an operating system and it provides protection as a firewall and mitigates the cyber threats. The encryption equipment consists of an encryption module, a decryption module, and interfaces for communication between modules and systems. The Advanced Encryption Standard (AES)-128, which is formally approved as top level by U.S. National Security Agency for cryptographic algorithms, is adopted. The development of the cyber security module is implemented in two main phases: reverse engineering and re-engineering. In the reverse engineering phase, the cyber security plan and system requirements are analyzed, and the AES algorithm is decomposed into functional units. In the re-engineering phase, we model the logical architecture using Vitech CORE9 software and simulate it with the Enhanced Functional Flow Block Diagram (EFFBD), which confirms the performance improvements of the hardware-based cryptographic module as compared to software based cryptography. Following this, the Hardware description language (HDL) code is developed and tested to verify the integrity of the code. Then, the developed code is implemented on the FPGA and connected to the personal computer through Recommended Standard (RS)-232 communication to perform validation of the developed component. For the future work, the developed FPGA based encryption equipment will be verified and validated in its expected operating environment by connecting it to the Advanced power reactor (APR)-1400 simulator.