Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2005.11a
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- Pages.599-602
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- 2005
Modification of CPW Pad Design for High fmax InGaAs/InAlAs Metamorphic High Electron Mobility Transistors
높은 $f_{max}$ 를 갖는 InGaAs/InAlAs MHEMT 의 Pad 설계
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Choi, Seok-Gyu
(Millimeter-wave INnovation Technology research center(MINT), Donggok University) ;
- Lee, Bok-Hyung (Millimeter-wave INnovation Technology research center(MINT), Donggok University) ;
- Lee, Mun-Kyo (Millimeter-wave INnovation Technology research center(MINT), Donggok University) ;
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Kim, Sam-Dong
(Millimeter-wave INnovation Technology research center(MINT), Donggok University) ;
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Rhee, Jin-Koo
(Millimeter-wave INnovation Technology research center(MINT), Donggok University)
- Published : 2005.11.26
Abstract
In this paper, we have performed a study that modifies the CPW Pad configurations to improve an
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