• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.164-167
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• 2002

This paper presents the design of Rijndael crypto-processor with 128 bits, 192 bits and 256 bits key size. In October 2000 Rijndael cryptographic algorithm is selected as AES(Advanced Encryption Standard) by NIST(National Institute of Standards and Technology). Rijndael algorithm is strong in any known attacks. And it can be efficiently implemented in both hardware and software. We implement Rijndael algorithm in hardware, because hardware implementation gives more fast encryptioN/decryption speed and more physically secure. We implemented Rijndael algorithm for 128 bits, 192 bits and 256 bits key size with VHDL, synthesized with Synopsys, and simulated with ModelSim. This crypto-processor is implemented using on-the-fly key generation method and using lookup table for S-box/SI-box. And the order of Inverse Shift Row operation and Inverse Substitution operation is exchanged in decryption round operation of Rijndael algorithm. It brings about decrease of the total gate count. Crypto-processor implemented in these methods is applied to mobile systems and smart cards, because it has moderate gate count and high speed.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.18 no.3
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• pp.34-39
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• 2004

This research investigated the influence on the 4 cell of DC discharge on the side of the discharge characteristic. This DC discharge cells are that composes AND gate of AND gate PDP newly proposed. As for the discharge starting voltage of this discharge cell of 4 pieces, it has been understood that there is deeply a relation up to the space charge generated from the discharge of adjoining discharge cell through the experiment. The discharge voltages which had become each discharge cell optimizations from the experiment result were decided. Moreover, the width of the margin of two AND input voltages is wide and the AND function occurs clearly. However, it has been qualitatively understood that it is difficult enough to obtain the operation margin of the DC priming discharge used to address discharge of PDP.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.278-286
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• 2011

In this paper, we present a compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson's equation using cylindrical coordinates. We used the model to investigate the electrostatic potential and current sensitivities of various gate lengths ($L_g$) and radii (R). Schr$\ddot{o}$dinger's equation was solved analytically for a one-dimensional (1-D) quantum well to include quantum effects in the model. The model takes into account quantum effects in the inversion region of the SG MOSFET using a triangular well. We show that the new model is in excellent agreement with the device simulation results in all regions of operation.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2005.10a
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• pp.125-131
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• 2005

Gate operations are very important as they are the starting point for export containers and the end point for import containers as far as checking and control exercised by terminal operators are concerned. The objective of this paper is to propose the design of separated gate system in order to reduce the truck turnaround time and to distribute the truck traffic volume in port container terminal. Because of a lot of container load and unload within short term, many trucks have to pass the gate at a time. This study suggests the separated gate system as an efficient design for gate operation considering integration of two individual berth.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.12
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• pp.2892-2898
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• 2015

We propose a new Double-Independent-Gate Ambipolar Silicon-Nanowire Field Effect Transistor(DIG Ambi-SiNWFET). The proposed transistor has two types of gate such as polarity gate and control gate. The polarity gate determines the operation that the gate bias controls NMOSFET or PMOSFET. The voltage of control gate controls the current characteristic of the transistor. We investigated systematically work functions of the two gates and source/drain to operate ambipolar current-voltage characteristics using 2D device simulator. When the work functions of polarity gate, control gate and source/drain are 4.75eV, 4.5eV, and 4.8eV, respectively, it showed the obvious ambipolar characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.134-142
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• 2010

A comparative study on the trade-off between the drive current and the total gate capacitance in double-gate (DG) and triple-gate (TG) FinFETs is performed by using 3-D device simulation. As the first result, we found that the optimum ratio of the hardmask oxide thickness ($T_{mask}$) to the sidewall oxide thickness ($T_{ox}$) is $T_{mask}/T_{ox}$=10/2 nm for the minimum logic delay ($\tau$) while $T_{mask}/T_{ox}$=5/1~2 nm for the maximum intrinsic gate capacitance coupling ratio (ICR) with the fixed channel length ($L_G$) and the fin width ($W_{fin}$) under the short channel effect criterion. It means that the TG FinFET is not under the optimal condition in terms of the circuit performance. Second, under optimized $T_{mask}/T_{ox}$, the propagation delay ($\tau$) decreases with the increasing fin height $H_{fin}$. It means that the FinFET-based logic circuit operation goes into the drive current-dominant regime rather than the input gate load capacitance-dominant regime as $H_{fin}$ increases. In the end, the sensitivity of $\Delta\tau/{\Delta}H_{fin}$ or ${{\Delta}I_{ON}}'/{\Delta}H_{fin}$ decreases as $L_G/W_{fin}$ is scaled-down. However, $W_{fin}$ should be carefully designed especially in circuits that are strongly influenced by the self-capacitance or a physical layout because the scaling of $W_{fin}$ is followed by the increase of the self-capacitance portion in the total load capacitance.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.28 no.3B
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• pp.297-306
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• 2008

In order to determine the effects of lock gate expansion at the Lake Youngsan and Yeongam as well as increase in the width of the connecting channel of the two lakes on flood control downstream of the Youngsan River, an unsteady hydraulic flood routing was conducted by combining the Lake Youngsan and Yeongam as a single connected system. The coupled operation of the two lakes was found to have little effect when the widths of the lock gates and the connecting channel are set at the current level. It was also found that increasing the width of the connecting channel as well as the lock gate of the Lake Yeongam is an effective means of reducing the stage of the Lake Youngsan, whereas an increase in the width of the Lake Youngsan's lock gate had a relatively smaller effect. The extended width of the connecting channel leads to a rise in the stage of the Lake Yeongam. In order to reduce the elevated stage, The Lake Yeongam's lock gate must be expanded along with the Lake Yeongsan's lock gate. The analysis found that the stage of the Lake Yeongsan can be effectively controlled through adjustment of opening and shutting criteria of the connecting channel's lock gate, when diversion discharge between the lakes is increased as a result of expanding the width of the connecting channel.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.83-88
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• 2003

The reset operation of a CCD image sensor was improved using charge trapping of a MOS structure to realize a loe voltage driving. A DC bias generating circuit was added to the reset structure which sets reference voltage and holds the signal charge to be detected. The generated DC bias is added to the reset pulse to give an optimized voltage margin to the reset operation, and is controlled by adjustment of the threshold voltage of a MOS transistor in the circuit. By the pulse-type stress voltage applied to the gate, the electrons and holes were injected to the gate dielectrics, and the threshold voltage could be adjusted ranging from 0.2V to 5.5V, which is suitable for controlling the incomplete reset operation due to the process variation. The charges trapped in the silicon nitride lead to the positive and negative shift of the threshold voltage, and this phenomenon is explained by Poole-Frenkel conduction and Fowler-Nordheim conduction. A CCD image sensor with $492(H){\;}{\times}{\;}510(V)$ pixels adopting this structure showed complete reset operation with the driving voltage of 3.0V. The resolution chart taken with the image sensor shows no image flow to the illumination of 30 lux, even in the driving voltage of 3.0V.

• Special Issue of the Society of Naval Architects of Korea
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• 2011.09a
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• pp.36-38
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• 2011

As the increase of the fuel oil price, the demand for saving of the ship running cost is growing. To meet the needs of the shipowners, the method for low load operation has been developed by engine licenser. As one of low load operation, the turbocharger cut-out system can be utilized flexibly both full and part load operation. It can be possible to optimize fuel consumption at both full and part load operation. Tests by engine licenser with 12K98MC engine have proven that the fuel oil consumption can be reduced approximately 5%. In this paper we will study the application of main engine turbocharger cut-out system onboard a vessel. One of four turbochargers with MAN Diesel & Turbo 12K98MC-C and 12K98ME-C engine is cut out with swing gate valve. The fuel oil consumption is measured during sea trial and engine shop test.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.263-267
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• 2014

Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don't have a great effect on temperature change.