• Journal of Power Electronics
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• 제12권1호
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• pp.19-23
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• 2012

This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC and GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2000년도 봄 학술발표회 논문집
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• pp.125-132
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• 2000

This study presents the application of genetic algorithms(GA) to the back analysis of tunnels. GA based on the theory of natural evolution, and have been evaluated very effective for their robust performances, particularly for optimizing structure problems. In the back analysis method, the selection of initial value and uncertainty of field measurements influence significantly on the analysis result. GA can improve this problems through a probabilistic approach. Besides, this technique have two other advantages over the back analysis. One is that it is not significantly affected by the form of problems. Another one is that it can consider two known parameter simultaneously. The propriety of this study is verified as the comparison in the same condition of the back analysis(Gens et al, 1987). In this study, it was performed to estimated the geotechnical parameters in the case of weak rock mass at the Kyung Bu Express railway tunnel. GA have been shown for effective application to a geotechnical engineering.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.53-57
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• 2012

This paper is for accurately simulating the breakdown of MHEMTs with an InP-etchstop layer. 2D-Hydrodynamic simulation parameters are investigated and calibrated for the InP-epitaxy layer. With these calibrated parameters, simulations are performed and analyzed for the breakdown of devices with an InP-etchstop layer. In the paper, the impact-ionization coefficients, the mobility degradation due to doping concentration, and the saturation velocity for InP-epitaxy layer are newly calibrated for more accurate breakdown simulation.

• 반도체디스플레이기술학회지
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• 제10권3호
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• pp.75-81
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• 2011

This paper presents a novel method for image classification based on a hybrid genetic algorithm (GA) and support vector machine (SVM) approach which can significantly improve the classification performance for content-based image retrieval (CBIR). Though SVM has been widely applied to CBIR, it has some problems such as the kernel parameters setting and feature subset selection of SVM which impact the classification accuracy in the learning process. This study aims at simultaneously optimizing the parameters of SVM and feature subset without degrading the classification accuracy of SVM using GA for CBIR. Using the hybrid GA and SVM model, we can classify more images in the database effectively. Experiments were carried out on a large-size database of images and experiment results show that the classification accuracy of conventional SVM may be improved significantly by using the proposed model. We also found that the proposed model outperformed all the other models such as neural network and typical SVM models.

• 대한기계학회논문집A
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• 제33권10호
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• pp.1029-1037
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• 2009

Recently, the technologies of mobile robots have been growing rapidly in the fields such as cleaning robot, explosive ordnance disposal robot, patrol robot, etc. However, the researches about the autonomous underwater robots have not been done so much, and they still remain at the low level of technology. This paper describes a model of 3-joint (4 links) fish robot type. Then we calculate the dynamic motion equation of this fish robot and use Singular Value Decomposition (SVD) method to reduce the divergence of fish robot's motion when it operates in the underwater environment. And also, we analysis response characteristic of fish robot according to the parameters of input torque function and compare characteristic of fish robot with 3 joint and fish robot with 2 joint. Next, fish robot's maximum velocity is optimized by using the combination of Hill Climbing Algorithm (HCA) and Genetic Algorithm (GA). HCA is used to generate the good initial population for GA and then use GA is used to find the optimal parameters set that give maximum propulsion power in order to make fish robot swim at the fastest velocity.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 추계학술발표회
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• pp.91-91
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• 1997

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.111-111
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• 1999

• 한국진공학회지
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• 제19권2호
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• pp.134-140
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• 2010

Metal-organic chemical vapour deposition (MOCVD)법으로 성장된 $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$/GaAs 이중 이종접합 구조의 특성을 contactless electroreflectance (CER) 분광법으로 조사하였다. CER 측정은 변조전압($V_{ac}$), 온도 및 dc 바이어스 전압($V_{bias}$)의 함수로 수행하였다. 상온에서는 5개의 신호가 관측되었는데, 이 신호들은 각각 GaAs, $In_{0.5}Ga_{0.5}P$, $In_{0.5}(Ga_{0.73}Al_{0.27})_{0.5}P$, $In_{0.5}(Ga_{0.5}Al_{0.5})_{0.5}P$ 및 $In_{0.5}(Ga_{0.2}Al_{0.8})_{0.5}P$ 전이에 관련된 것이다. CER 스펙트럼의 온도 의존성으로부터 Varshni 계수 및 평탄인 자를 구하였다. 그리고 인가전압에 따른 신호의 진폭은 순방향 바이어스 전압 인가시 점차로 감소하나, 역방향 바이어스 전압 인가시에는 반대의 경향을 보였다.

• ETRI Journal
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• 제24권4호
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• pp.270-279
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• 2002

We present a self-consistent numerical method for calculating the conduction-band profile and subband structure of AlGaN/GaN single heterojunctions. The subband calculations take into account the piezoelectric and spontaneous polarization effect and the Hartree and exchange-correlation interaction. We calculate the dependence of electron sheet concentration and subband energies on various structural parameters, such as the width and Al mole fraction of AlGaN, the density of donor impurities in AlGaN, and the density of acceptor impurities in GaN, as well as the electron temperature. The electron sheet concentration was sensitively dependent on the Al mole fraction and width of the AlGaN layer and the doping density of donor impurities in the AlGaN. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

• 한국에너지공학회:학술대회논문집
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• 한국태양에너지학회, 한국에너지공학회 1993년도 춘계 공동학술발표회 초록집
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• pp.53-59
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• 1993

The interests on GaAs solar cell grown on Ge substrates as an alternative of GaAs substrate arises from its very close lattice parameters, very small difference in thermal expansion coefficients, and much higher fracture toughness between GaAs and Ge. In addition, for many space power application, it would be a most attractive solar cell with high radiation resistance of GaAs and high reliability for the reverse current damage of Ge, and expecting the theoretical efficiency limit of the tandem GaAs/Ge solar cell is 34% under 1 Sun, AM 0, and 28$^{\circ}C$ condition. In this report, we have reviewed the performance and the manufacturing technics of GaAs/Ge solar cell, and current status of research in GaAs/Ge solar cell.