Study on GaAs/Ge Solar Cell for Space Use

우주선용 GaAs/Ge 태양전지에 관한 연구

  • 이만근 (한국 에너지 기술 연구소) ;
  • 박이준 (한국 에너지 기술 연구) ;
  • 최영희 (한국 에너지 기술 연구) ;
  • 전흥석 (한국 에너지 기술 연구소)
  • Published : 1993.05.01

Abstract

The interests on GaAs solar cell grown on Ge substrates as an alternative of GaAs substrate arises from its very close lattice parameters, very small difference in thermal expansion coefficients, and much higher fracture toughness between GaAs and Ge. In addition, for many space power application, it would be a most attractive solar cell with high radiation resistance of GaAs and high reliability for the reverse current damage of Ge, and expecting the theoretical efficiency limit of the tandem GaAs/Ge solar cell is 34% under 1 Sun, AM 0, and 28$^{\circ}C$ condition. In this report, we have reviewed the performance and the manufacturing technics of GaAs/Ge solar cell, and current status of research in GaAs/Ge solar cell.

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