• Title/Summary/Keyword: Full-CMOS

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Design of a Low-Power CVSL Full Adder Using Low-Swing Technique (Low-Swing 기술을 이용한 저 전력 CVSL 전가산기 설계)

  • Kang Jang Hee;Kim Jeong Beom
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.2 s.332
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    • pp.41-48
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    • 2005
  • In this paper, we propose a new Low-Swing CVSL full adder for low power consumption. An $8\times8$ parallel multiplier is used for the comparison between the proposed Low-Swing CVSL full adder with conventional CVSL full adder. Comparing the previous works, this circuit is reduced the power consumption rate of $13.1\%$ and the power-delay-product of $14.3\%$. The validity and effectiveness of the proposes circuits are verified through the HSPICE under Hynix $0.35{\mu}m$ standard CMOS process.

A Design of Wide Input Range Multi-mode Rectifier for Wireless Power Transfer System (넓은 입력 범위를 갖는 무선 전력 전송용 다중 모드 정류기 설계)

  • Choi, Young-Su;Lee, Kang-Yoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.4
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    • pp.34-42
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    • 2012
  • In this paper, a wide-input range CMOS multi-mode rectifier for wireless power transfer system is presented. The output voltage of multi-mode rectifier is sensed by comparator and switches are controlled based on it. The mode of multi-mode rectifier is automatically selected by the switches among full-wave rectifier, 1-stage voltage multiplier and 2-stage voltage multiplier. In full-wave rectifier mode, the rectified output DC voltage ranges from 9 V to 19 V for a input AC voltage from 10 V to 20 V. However, the input-range of the multi-mode rectifier is more improved than that of the conventional full-wave rectifier by 5V, so the rectified output DC voltage ranges from 7.5 V to 19 V for a input AC voltage from 5 V to 20 V. The power conversion efficiency of the multi-mode rectifier is 94 % in full-wave rectifier mode. The proposed multi-mode rectifier is fabricated in a $0.35{\mu}m$ CMOS process with an active area of $2500{\mu}m{\times}1750{\mu}m$.

A 67dB DR, 1.2-V, $0.18-{\mu}m$ Sigma-Delta Modulator for WCDMA Application (WCDMA용 67-dB DR, 1.2-V, $0.18-{\mu}m$ 시그마-델타 모듈레이터 설계)

  • Kim, Hyun-Jong;Yoo, Chang-Sik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.6 s.360
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    • pp.50-59
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    • 2007
  • [ $0.18-{\mu}m$ ] CMOS 1.2-V 2nd-order ${\Sigma}{\Delta}$ modulator with full-feedforward topology is designed. Using full-feedforward topology makes op-amp performance requirements much less stringent, therefore it has been adopted as a good candidate for low-voltage low-power applications throughout the world. Also, ${\Sigma}{\Delta}$ modulator is designed with top-down design approach, therefore various nonideal effects of op-amp are modeled in this paper.

A CMOS Bridge Rectifier for HF and Microwave RFID Systems

  • Park Kwangmin
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.6
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    • pp.237-240
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    • 2004
  • In this paper, a CMOS bridge rectifier for HF and microwave RFID systems is presented. The proposed RFID CMOS bridge rectifier is designed with two NMOSs and two PMOSs whose gates are connected to the antenna, and it is operated as a full wave bridge rectifier. The simulation results obtained with SPICE show the well rectified and high enough DC output voltages for the operating frequencies of 13.56 MHz, 915 MHz, and 2.45 GHz which are used in various RFID systems. The obtained DC output voltages are sufficiently high for driving the low power microchip in RFID transponder for the frequency range of HF and microwave.

A 67.5 dB SFDR Full-CMOS VDSL2 CPE Transmitter and Receiver with Multi-Band Low-Pass Filter

  • Park, Joon-Sung;Park, Hyung-Gu;Pu, Young-Gun;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.4
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    • pp.282-291
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    • 2010
  • This paper presents a full-CMOS transmitter and receiver for VDSL2 systems. The transmitter part consists of the low-pass filter, programmable gain amplifier (PGA) and 14-bit DAC. The receiver part consists of the low-pass filter, variable gain amplifier (VGA), and 13-bit ADC. The low pass filter and PGA are designed to support the variable data rate. The RC bank sharing architecture for the low pass filter has reduced the chip size significantly. And, the 80 Msps, high resolution DAC and ADC are integrated to guarantee the SNR. Also, the transmitter and receiver are designed to have a wide dynamic range and gain control range because the signal from the VDSL2 line is variable depending on the distance. The chip is implemented in 0.25 ${\mu}m$ CMOS technology and the die area is 5 mm $\times$ 5 mm. The spurious free dynamic range (SFDR) and SNR of the transmitter and receiver are 67.5 dB and 41 dB, respectively. The power consumption of the transmitter and receiver are 160 mW and 250 mW from the supply voltage of 2.5 V, respectively.

New High Speed Parallel Multiplier for Real Time Multimedia Systems (실시간 멀티미디어 시스템을 위한 새로운 고속 병렬곱셈기)

  • Cho, Byung-Lok;Lee, Mike-Myung-Ok
    • The KIPS Transactions:PartA
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    • v.10A no.6
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    • pp.671-676
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    • 2003
  • In this paper, we proposed a new First Partial product Addition (FPA) architecture with new compressor (or parallel counter) to CSA tree built in the process of adding partial product for improving speed in the fast parallel multiplier to improve the speed of calculating partial product by about 20% compared with existing parallel counter using full Adder. The new circuit reduces the CLA bit finding final sum by N/2 using the novel FPA architecture. A 5.14nS of multiplication speed of the $16{\times}16$ multiplier is obtained using $0.25\mu\textrm{m}$ CMOS technology. The architecture of the multiplier is easily opted for pipeline design and demonstrates high speed performance.

A Rail-to-Rail Input 12b 2 MS/s 0.18 μm CMOS Cyclic ADC for Touch Screen Applications

  • Choi, Hee-Cheol;Ahn, Gil-Cho;Choi, Joong-Ho;Lee, Seung-Hoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.3
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    • pp.160-165
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    • 2009
  • A 12b 2 MS/s cyclic ADC processing 3.3 Vpp single-ended rail-to-rail input signals is presented. The proposed ADC demonstrates an offset voltage less than 1 mV without well-known calibration and trimming techniques although power supplies are directly employed as voltage references. The SHA-free input sampling scheme and the two-stage switched op-amp discussed in this work reduce power dissipation, while the comparators based on capacitor-divided voltage references show a matched full-scale performance between two flash sub ADCs. The prototype ADC in a $0.18{\mu}m$ 1P6M CMOS demonstrates the effective number of bits of 11.48 for a 100 kHz full-scale input at 2 MS/s. The ADC with an active die area of $0.12\;mm^2$ consumes 3.6 m W at 2 MS/s and 3.3 V (analog)/1.8 V (digital).

A high frequency CMOS precision full-wave rectifier

  • Riewruja, V.;Wangwiwattana, C.;Guntapong, R.;Chaikla, A.;Linthong, A.
    • 제어로봇시스템학회:학술대회논문집
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    • 2000.10a
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    • pp.514-514
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    • 2000
  • In this article, the realization of a precision full-wave rectifier circuit for analog signal processing, which operates throughout in the current domain, is presented. The circuit makes use of a MOS class B/AB configuration, and provides a wide dynamic range and wide-band capability. The rectifier has a simple circuit configuration and is suitable for implementing in CMOS integrated circuit form as versatile building block. The characteristic of the circuit exhibits a low distortion en the output signal at low level input signal. PSPICE simulation results demonstrating the characteristic of the proposed circuit are included.

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Electrically Enhanced Readout System for a High-Frequency CMOS-MEMS Resonator

  • Uranga, Arantxa;Verd, Jaume;Lopez, Joan Lluis;Teva, Jordi;Torres, Francesc;Giner, Joan Josep;Murillo, Gonzalo;Abadal, Gabriel;Barniol, Nuria
    • ETRI Journal
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    • v.31 no.4
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    • pp.478-480
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    • 2009
  • The design of a CMOS clamped-clamped beam resonator along with a full custom integrated differential amplifier, monolithically fabricated with a commercial 0.35 ${\mu}m$ CMOS technology, is presented. The implemented amplifier, which minimizes the negative effect of the parasitic capacitance, enhances the electrical MEMS characterization, obtaining a $48{\times}10^8$ resonant frequency-quality factor product ($Q{\times}f_{res}$) in air conditions, which is quite competitive in comparison with existing CMOS-MEMS resonators.

Novel Pass-transistor Logic based Ultralow Power Variation Resilient CMOS Full Adder

  • Guduri, Manisha;Islam, Aminul
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.2
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    • pp.302-317
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    • 2017
  • This paper proposes a new full adder design based on pass-transistor logic that offers ultra-low power dissipation and superior variability together with low transistor count. The pass-transistor logic allows device count reduction through direct logic realization, and thus leads to reduction in the node capacitances as well as short-circuit currents due to the absence of supply rails. Optimum transistor sizing alleviates the adverse effects of process variations on performance metrics. The design is subjected to a comparative analysis against existing designs based on Monte Carlo simulations in a SPICE environment, using the 22-nm CMOS Predictive Technology Model (PTM). The proposed ULP adder offers 38% improvement in power in comparison to the best performing conventional designs. The trade-off in delay to achieve this power saving is estimated through the power-delay product (PDP), which is found to be competitive to conventional values. It also offers upto 79% improvement in variability in comparison to conventional designs, and provides suitable scalability in supply voltage to meet future demands of energy-efficiency in portable applications.