• 대한물리치료과학회지
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• 제10권1호
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• pp.198-205
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• 2003

We evaluated the effect of low power GaAsAl laser on re-epithelization in full-thickness excisional wound of rat skin. Two full-thickness excisions were made on the back of the experimental animals. Low power laser applications with 10mW intensity were treated experimental animals twice a day for 7 days. On the seventh postoperative day the quantitative analysis of re-epithelization was performed using immunohistochemical staining for proliferating cell nuclear antigen (PCNA). The majority of PCNA immunoreactive cells was observed at epithelial cells in the margin of full thickness excisional wound. The low power laser treatments significantly increased the number of PCNA immunoreactive cell as compared to that of non treated animal group (p<0.01). The shape of PCNA immunoreactive cell appeared as small dark, round to ovoid structures. Most PCNA immunoreactive cells exhibited a high intensity of staining that contrasted sharply with the surrounding background. In conclusion, these findings suggest that GaAlAs laser treatments effectively enhance the epithelial wound healing by the stimulating cell proliferation. Furthermore, the majority of cell proliferation occurred in the margin of full thickness excisional wound.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.29-32
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• 2007

We analyzed the effect of cell resolution on the luminous efficacy through three-dimensional numerical simulation to understand the inherent discharge mechanism change in the plasma display panel. As the resolution increases from VGA to Full HD, the luminous efficacy decreases. With higher Xe content, VUV generation efficacy of Full HD becomes much lower than those of VGA or XGA cells, due to the increased plasma loss and lower electron heating. However a long electrode gap $140{\mu}m$ in Full HD cell with Ne-Xe [20%] results in the high luminous efficacy comparable to that of the XGA cell with $60{\mu}m$ gap. When comparing the effects of Xe content variation on the luminous efficacy of two different subpixel types, i. e., SDE (Segmented electrode in Delta color arrayed, Enclosed subpixel) [1] and conventional stripe barrier type in the XGA and Full HD cells, the luminous efficacy of SDE structure shows higher improvement in Full HD resolution compared with that of conventional type XGA cell, whose cause is identified as the reduced plasma loss.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권2호
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• pp.53-61
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• 2004

Characteristics of half cells of graphite/lithium and LiCoO$_2$/lithium, and full cells of graphite/LiCoO$_2$/ were analyzed by the use of GISOC(the gradual increasing of the state of charge). GISOC analyses generated IIE(the initial intercalation efficiency), which represents lithium intercalation property of the electrode material, and IIC$_{s}$(the initial irreversible capacity by the surface), which represents irreversible reaction between the electrode surface and electrolyte. Linear-fit range of graphite and LiCo/O$_2$electrodes were respectively 370 and 150 mAh/g based on material weight. IIE of graphite and LiCo/O$_2$electrodes were respectively 93∼94 % and 94∼95 %, and IICs of graphite and LiCo/O$_2$electrodes were 15∼17 mAH/g and 0.3∼1.7 mAh/g, respectively. IIE of graphite/LiCo/O$_2$full cell for GX25 and DJG311 as graphite showed 89∼90 %, which IIE value was lower than IIE of half cell of the cathode and the anode. Parameters of IIE and IIC$_{s}$ can also be used to represent not only half cell but also full cell. The characteristics of the full cell can be simulated through the correlative interpretation of potential profile, IIE, and IIC$_{s}$ of half cells.cells.

• 한국컴퓨터산업학회논문지
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• 제6권5호
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• pp.757-766
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• 2005

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6T Full CMOS SRAM had been continued as the technology advances, However, conventional 6T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6T Full CMOS SRAM is $70{\sim}90F^{2}$, which is too large compared to $8{\sim}9F^{2}$ of DRAM cell. With 80nm design rule using 193nm ArF lithography, the maximum density is 72M bits at the most. Therefore, pseudo SRAM or 1T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed $S^{3}$ cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^{3}$ SRAM cell technology with 100nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.314-321
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• 2006

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6 T Full CMOS SRAM had been continued as the technology advances. However, conventional 6 T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6 T Full CMOS SRAM is $70{\sim}90\;F^2$, which is too large compared to $8{\sim}9\;F^2$ of DRAM cell. With 80 nm design rule using 193 nm ArF lithography, the maximum density is 72 Mbits at the most. Therefore, pseudo SRAM or 1 T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64 M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6 T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed S3 cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^3$ SRAM cell technology with 100 nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• ETRI Journal
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• 제34권2호
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• pp.284-287
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• 2012

Quantum-dot cellular automata (QCA) is one of the few alternative computing platforms that has the potential to be a promising technology because of higher speed, smaller size, and lower power consumption in comparison with CMOS technology. This letter proposes an optimized full comparator for implementation in QCA. The proposed design is compared with previous works in terms of complexity, area, and delay. In comparison with the best previous full comparator, our design has 64% and 85% improvement in cell count and area, respectively. Also, it is implemented with only one clock cycle. The obtained results show that our full comparator is more efficient in terms of cell count, complexity, area, and delay compared to the previous designs. Therefore, this structure can be simply used in designing QCA-based circuits.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2012년도 전력전자학술대회 논문집
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• pp.518-519
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• 2012

This paper suggested a fuel cell generation system which combined interleaved full-bridge converter with half-bridge inverter. High ratio step-up converter is essential to use the power as general voltage source. Full-bridge converter has high efficiency and can boost the input voltage to high output with transformer. With series connected capacitors, interleaved full-bridge converter and half-bridge inverter are combined. Half-bridge inverter has two fewer switches compared to full-bridge type. Also, switching loss can be reduced. The performance is verified through simulation with 1.5[kW] fuel cell generation system.

• 한국가금학회지
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• 제28권3호
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• pp.231-237
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• 2001

육계를 13주간 사육하면서 5주령부터 시험사료를 급여한 후 세포표면항원의 발현에 미치는 영향을 측정하기 위하여, 아마종실과 항산화제를 첨가하지 않은 대조구($T_{1}$ ), 아마종실만을 첨가한 사료($T_{2}$ ), 아마종실과 u-toco-pherol을 첨가한 사료($T_{3}$ ), 아마종실에 u-tocopherol과 셀레늄을 첨가한 사료($T_{4}$ )를 육계에 급여한 바 면역반응에 미치는 영향은 다음과 같았다. 1차 면역에 관여하는 monocyte 군은 시험사료의 급여기간이 증가할수록 $T_{1}$ 에 비하여 $T_{2}$ , $T_{3}$ , $T_{4}$ 구에서 유의적으로 증가하는 경향을 보였는데 그중 $T_{2}$ 구와 $T_{3}$ 구에서 많이 증가되었다. B세포는 시험사료의 급여기간보다는 급여사료에 따라 증가하였는데,$T_{2} , $T_{3}, $T_{4}$ 구는 $T_{1}$ 구에 비하여 2배 이상 증가하였다. CD4 양성반응(T helper cell)과 CD8 양성 세포(T $cytotoxic^pressor cell)는 $T_{2}$ , $T_{3}$ ,$T_{4}$ 구는 $T_{1}$ 구보다 증가하였으나 사료에 따라 일정한 차이는 없었다. MHC classII는 시험사료의 종류나 급여 기간에 따라 차이는 없었다.었다.

• BMB Reports
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• 제50권3호
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• pp.138-143
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• 2017

Ovariectomy-induced bone loss is related to an increased deposition of osteoclasts on bone surfaces. We reported that the 36-amino-acid-long neuropeptide Y (NPY) could mobilize hematopoietic stem/progenitor cells (HSPCs) from the bone marrow to the peripheral blood by regulating HSPC maintenance factors and that mobilization of HSPCs ameliorated low bone density in an ovariectomy-induced osteoporosis mouse model by reducing the number of osteoclasts. Here, we demonstrated that new NPY peptides, recombined from the cleavage of the full-length NPY, showed better functionality for HSPC mobilization than the full-length peptide. These recombinant peptides mediated HSPC mobilization with greater efficiency by decreasing HSPC maintenance factors. Furthermore, treatment with these peptides reduced the number of osteoclasts and relieved ovariectomy-induced bone loss in mice more effectively than treatment with full-length NPY. Therefore, these results suggest that peptides recombined from full-length NPY can be used to treat osteoporosis.

• 한국잠사학회:학술대회논문집
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• 한국잠사학회 2002년도 Join Meetings of Korean Society of Sericultural Science and Japanse Society of Sericultural Science
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• pp.76-76
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• 2002

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