• Title/Summary/Keyword: Frequency Divider

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A High Voltage Power Supply for X-Ray Tube Using High Frequency (고주파 인버터식 X-선관용 고전압 전원장치)

  • Kim, H.S.;Yoo, D.W.;Cho, J.G.;Back, J.W.;Rim, G.H.;Won, C.Y.
    • Proceedings of the KIEE Conference
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    • 1997.07f
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    • pp.2246-2248
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    • 1997
  • This paper presents a high-frequency inverter type high-voltage power supply for X-ray equipments. The high-voltage generator consist of an inverter unit including the SR(Series Resonance) type PSC(Phase-Shifted Control) PWM circuit adopting IGBT as the switching power device and high-voltage unit including the CW(Cockcroft Walton) circuit. When the X-ray equipment is radiographing at large power for a short time, this generator operates through feedback voltage mode control to obtain a high speed leading edge and low ripple. The operating modes and design consideration of the proposed power supply are given. Issues in the design of high-voltage divider for high voltage measuring. Experimental results are presented to verify the performance of the designed power supply for varying load conditions. The proposed apparatus has several advantages, e.g., the fast rising time of tube voltage, accuracy and reduced component size etc.

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Wideband VHF and UHF RF Front-End Receiver for DVB-H Application

  • Park, Joon-Hong;Kim, Sun-Youl;Ho, Min-Hye;Baek, Dong-Hyun
    • Journal of Electrical Engineering and Technology
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    • v.7 no.1
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    • pp.81-85
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    • 2012
  • This paper presents a wideband and low-noise direct conversion front-end receiver supporting VHF and UHFbands simultaneously. The receiver iscomposed of a low-noise amplifier (LNA), a down conversion quadrature mixer, and a frequency divider by 2. The cascode configuration with the resistor feedback is exploited in the LNA to achieve a wide operating bandwidth. Four gainstep modesare employed using a switched resistor bank and a capacitor bank in the signal path to cope with wide dynamic input power range. The verticalbipolar junction transistors are used as the switching elements in the mixer to reduce 1/f noise corner frequency. The proposed front-end receiver fabricated in 0.18 ${\mu}m$ CMOS technology shows very low minimum noise figureof 1.8 dB and third order input intercept pointof -12dBm inthe high-gain mode of 26.5 dBmeasured at 500 MHz.The proposed receiverconsumeslow current of 20 mA from a 1.8 V power supply.

Frequency Multiplier Using Diplexer based on CRLH Transmission Line (CRLH 전송선로를 기반으로 한 다이플렉서를 이용한 주파수 체배기)

  • Kim, Seung-Hwan;Kim, Young;Lee, Young-Soon;Yoon, Young-Chul
    • Journal of Advanced Navigation Technology
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    • v.14 no.1
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    • pp.66-73
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    • 2010
  • This paper proposes the frequency multiplier using diplexer based on CRLH transmission line with dualband characteristic. The diplexer is separated the output signals of harmonic generator, which is generated the harmonic signals using nonlinear device. The diplexer consists of the inphase power divider, 0o/90o phase controller and dual-band quadrature hybrid coupler. This send out the selecting output signals of the harmonic signals and suppresses out of signals. To validate a function of multiplier, the harmonic generator and diplexer with 2 GHz and 3 GHz operating frequency range is implemented. As a result, the proposed frequency multiplier is operated normally.

Design of a 5.2GHz/2.4GHz Dual band CMOS Frequency Synthesizer for WLAN (WLAN을 위한 5.2GHz/2.4GHz 이중대역 주차수 합성기의 설계)

  • Kim, Kwang-Il;Lee, Sang-Cheol;Yoon, Kwang-Sub;Kim, Seok-Jin
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.32 no.1A
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    • pp.134-141
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    • 2007
  • This paper presents a frequency synthesizer(FS) for 5.2GHz/2.4GHz dual band wireless applications which is designed in a standard $0.18{\mu}m$ CMOS1P6M process. The 2.4GHz frequency is obtained from the 5.2GHz output frequency of Voltage Controlled Oscillator (VCO) by using the Switched Capacitor (SC) and the divider-by-2. Power dissipations of the proposed FS and VCO are 25mW and 3.6mW, respectively. The tuning range of VCO is 700MHz and the locking time is $4{\mu}s$. The simulated phase noise of PLL is -101.36dBc/Hz at 200kHz offset frequency from 5.0GHz with SCA circuit on.

Analysis of Phase Noise in Frequency Synthesizer with DDS Driven PLL Architecture (DDS Driven PLL 구조 주파수 합성기의 위상 잡음 분석)

  • Kwon, Kun-Sup;Lee, Sung-Jae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.11
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    • pp.1272-1280
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    • 2008
  • In this paper, we have proposed a phase noise model of fast frequency hopping synthesizer with DDS Driven PLL architecture. To accurately model the phase noise contribution of noise sources in frequency hopping synthesizer, they were investigated using model of digital divider for PLL, DAC for DDS and Leeson's model for reference oscillator and VCO. Especially it was proposed that the noise component of low pass filter was considered together with the phase noise of VCO. Under assuming linear operation of a phase locked loop, the phase noise transfer functions from noise sources to the output of synthesizer was analyzed by superposition theory. The proposed phase noise prediction model was evaluated and its results were compared with measured data.

A Design of Frequency Synthesizer for T-DMB and Mobile-DTV Applications (T-DMB 및 mobile-DTV 응용을 위한 주파수 합성기의 설계)

  • Moon, Je-Cheol;Moon, Yong
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.1
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    • pp.69-78
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    • 2007
  • A Frequency synthesizer for T-DMB and mobile-DTV applications was designed using $0.18{\mu}m$ CMOS process with 1.8V supply. PMOS transistors were chosen for VCO core to reduce phase noise. The VCO range is 920MHz-2100MHz using switchable inductors, capacitors and varactors. Varactor biases that improve varactor acitance characteristics were minimized as two, and $K_{VCO}$(VCO gain) value was aintained by switchable varactor. Additionally, VCO was designed that VCO gain and the interval of VCO gain were maintained using VCO gain compensation logic. VCO, PFD, CP and LF were verified by Cadence Spectre, and divider was simulated using Matlab Simulink, ModelSim and HSPICE. VCO consumes 10mW power, and is 56.3% tuning range. VCO phase noise is -127dBc/Hz at 1MHz offset for 1.58GHz output frequency. Total power consumption of the frequency synthesizer is 18mW, and lock time is about $140{\mu}s$.

An Integer-N PLL Frequency Synthesizer Design for The 900MHz UHF RFID Application (900MHz UHF대역 RFID 응용을 위한 Integer-N PLL주파수 합성기 설계)

  • Kim, Sin-Woong;Kim, Young-Sik
    • The Journal of the Korea institute of electronic communication sciences
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    • v.4 no.4
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    • pp.247-252
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    • 2009
  • This paper presents an Integer-N phase-locked loop (PLL) frequency synthesizer using a novel prescaler based on a charge pump and clock triggering circuit. A quadrature VCO has been designed for the 900MHz UHF RFID application. In this circuit, a voltage-controlled oscillator(VCO), a novel Prescaler, phase frequency detector(PFD), charge pump(CP), and analog lock detector(ALD) have been integrated with 0.35-${\mu}m$CMOS process. The integer divider has been developed with a verilog-HDL module, and the PLL mixed mode simulation has been performed with Spectre-Verilog co-simulator. The sweep range of VCO is designed from 828 to 960 MHz and the VCO generates four phase quadrature signals. The simulation results show that the phase noise of VCO is -102dBc/Hz at 100 KHz offset frequency, and the maximum lock-in time is about 4us with 32MHz step change (from 896 to 928 MHz).

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Design of a CMOS IF PLL Frequency Synthesizer (CMOS IF PLL 주파수합성기 설계)

  • 김유환;권덕기;문요섭;박종태;유종근
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.8
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    • pp.598-609
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    • 2003
  • This paper describes a CMOS IF PLL frequency synthesizer. The designed frequency synthesizer can be programmed to operate at various intermediate frequencies using different external LC-tanks. The VCO with automatic amplitude control provides constant output power independent of the Q-factor of the external LC-tank. The designed frequency divider includes an 8/9 or 16/17 dual-modulus prescaler and can be programmed to operate at different frequencies by external serial data for various applications. The designed circuit is fabricated using a 0.35${\mu}{\textrm}{m}$ n-well CMOS process. Measurement results show that the phase noise is 114dBc/Hz@100kHz and the lock time is less than 300$mutextrm{s}$. It consumes 16mW from 3V supply. The die area is 730${\mu}{\textrm}{m}$$\times$950${\mu}{\textrm}{m}$.

Development of Frequency Weighing Sensor and Single Crystal Growth (새로운 무게센서 재발과 단결정성장(1))

  • Jang Y.N.;Sung N.H.;Chae S.C.;Bae I.K.;Kim I.J.
    • Korean Journal of Crystallography
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    • v.8 no.1
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    • pp.38-47
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    • 1997
  • A new weighing sensor for the automatic diameter control system of the crystal growth is developed in this study. This weighing sensor measures the frequency of the vibrating element which is lineally changing with respect to weight. The signal and the power of this system are transmitted without any physical contact, so that this sensor offers high accuracy and resolution. This system consists of a string, a sinusoidal wave generator, an automatic amplification adjusting circuit, signal transformers and a PCB. 4 kinds of programs are developed for checking DAC, weight calibration and controlling growth process. The measurements of the standard deviation and the resolution show $\pm0.10g$(measured at every second) and $5{\times}10^{-5}$, respectively, This weighing sensor is effective under high pres-sure of 200 atm, high temperature and vacuum condition. The weighing system can control the temperature in the accuracy of $\pm0.025^{\circ}C$ with the 'signal divider'. The optical quality single crystals of $(YGd)_3Sc_2Ga_3O_{12},\;Er-Y_3Sc_2Al_3O_{12},\;and\;Bi_{12}GeO_{20}$ have been grown by Czo-chralski method using this auto-diameter control system.

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Implementation of RF Frequency Synthesizer for IEEE 802.15.4g SUN System (IEEE 802.15.4g SUN 시스템용 RF 주파수 합성기의 구현)

  • Kim, Dong-Shik;Yoon, Won-Sang;Chai, Sang-Hoon;Kang, Ho-Yong
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.12
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    • pp.57-63
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    • 2016
  • This paper describes implementation of the RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the IEEE802.15.4g SUN sensor node transceiver modules. Design of the each module like VCO, prescaler, 1/N divider, ${\Delta}-{\Sigma}$ modulator, and common circuits of the PLL has been optimized to obtain high speed and low noise performance. Especially, the VCO has been designed with NP core structure and 13 steps cap-bank to get high speed, low noise, and wide band tuning range. The output frequencies of the implemented synthesizer is 1483MHz~2017MHz, the phase noise of the synthesizer is -98.63dBc/Hz at 100KHz offset and -122.05dBc/Hz at 1MHz offset.