• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.229-237
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• 2005

The degradation phenomena in SiGe hetero-junction bipolar transistors(SiGe HBTs) induced by bias stress are investigated in this review. If SiGe HBTs are stressed over a specific time interval, the device parameters deviate from their nominal values due to the internal changes in the devices. Reverse-bias stress on emitter-base(EB) junctions causes base current increase and current gain decrease because carriers accelerated by the electrical field generate recombination centers. When forward-bias current stress is conducted at an ambient temperature above $140^{\circ}C$ , hot carriers produced by Auger recombination or avalanche multiplication induce current gain fluctuation. Mixed-mode stressing, where high emitter current and high collector-base voltage are simultaneously applied to the device, provokes base current rise as EB reverse-bias stressing does.

• Korean Journal of Materials Research
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• v.26 no.2
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• pp.84-89
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• 2016

We present the rectifying and nitrogen monoxide (NO) gas sensing properties of an oxide semiconductor heterostructure composed of n-type zinc oxide (ZnO) and p-type copper oxide thin layers. A CuO thin layer was first formed on an indium-tin-oxide-coated glass substrate by sol-gel spin coating method using copper acetate monohydrate and diethanolamine as precursors; then, to form a p-n oxide heterostructure, a ZnO thin layer was spin-coated on the CuO layer using copper zinc dihydrate and diethanolamine. The crystalline structures and microstructures of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p-n oxide heterostructure showed a non-linear diode-like rectifying behavior at various temperatures ranging from room temperature to $200^{\circ}C$. When the spin-coated ZnO/CuO heterojunction was exposed to the acceptor gas NO in dry air, a significant increase in the forward diode current of the p-n junction was observed. It was found that the NO gas response of the ZnO/CuO heterostructure exhibited a maximum value at an operating temperature as low as $100^{\circ}C$ and increased gradually with increasing of the NO gas concentration up to 30 ppm. The experimental results indicate that the spin-coated ZnO/CuO heterojunction structure has significant potential applications for gas sensors and other oxide electronics.

• Journal of the Korean Society of Radiology
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• v.1 no.3
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• pp.5-10
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• 2007

This study was performed to measure about exposure dose during simple abdmon radiation radiography. The exposure dose was measured by PDD, surface dose, respectively. The result was as followed: 1. When tube voltage were increased with 60-85kv, surface dose were increased. When FFD(focus film distance) at the 50-150cm and mAs were increased, surface dose were decreased. 2. The percentage depth dose(PDD) were appeared 50% below depth dose at 4cm with 60-75kv, and 6cm depth with 80-85kv, 5% below depth dose at 12cm with 60kv, and depth with 65-85kv. 3. The percentage forward scatter increased from 10% to 11.78% at the 60-85kv. The back scatter dose were increase from 25% to 37% at the 60-85kv. The side scatter dose were affected to heel effect.

• Korean Journal of Metals and Materials
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• v.46 no.10
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• pp.683-690
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• 2008

In order to develop transparent electrodes for high efficiency GaN-based light emitting diodes (LEDs), the electrical and optical properties of the electron beam evaporated ITO contacts have been investigated as a function of the deposition temperature and flow rate of oxygen during the deposition. As the deposition temperature increases from $140^{\circ}C$ to $220^{\circ}C$, the resistivity of the ITO films decreases slightly from $4.0{\times}10^{-4}{\Omega}cm$ to $3.3{\times}10^{-4}{\Omega}cm$, meanwhile the transmittance of the ITO films significantly increases from 67% to 88% at the wavelength of 470 nm. When the flow rate of oxygen during the deposition increases from 2 sccm to 4 sccm, the resistivity of the ITO films increases from $3.6{\times}10^{-4}{\Omega}cm$ to $7.4{\times}10^{-4}{\Omega}cm$, meanwhile the transmittance of the ITO films increases from 86% to 99% at 470 nm. Blue LEDs fabricated with the electron beam evaporated ITO electrode show that the ITO films deposited at $200^{\circ}C$ and 3 sccm of the oxygen flow rate give a low forward-bias voltage of 3.55 V at injection current of 20 mA with a highest output power.

• The Korean Journal of Pharmacology
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• v.30 no.1
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• pp.67-73
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• 1994

Na-Ca exchange transports calcium ion either into (reverse mode Na-Ca exchange) or out of the cell (forward mode Na-Ca exchange) according to the direction of driving force produced by the changes in ratio of intra- and extra-cellular Na concentrations. Thus, Na-Ca exchange is regarded as the regulator of myocardial contraction. However, the existence of reverse mode Na-Ca exchange and its role in myocardial contraction is still questioned. Present study was performed to identify the presence of reverse mode Na-Ca exchange and its possible involvement in the regulation of myocardial contraction in rat heart. Using the left atria of rat, contraction was induced by electrical field stimulation (EFS, 0.5 msec duration and supramaximal voltage). Changing of the stimulation frequencies from resting 4 Hz to 0.4, 1 or 8 Hz caused typical negative staircase effect in twitch tension, but $^{45}Ca$ uptake showed bimodal increase. When the stimulation frequency was abruptly changed from 4 Hz to 0.4 Hz the atrial twitch tension showed three phased-enhancement, that is, the initial rapid increase (the first phase) followed by rapid decrease (the second phase) and stabilization (the third phase). $^{45}Ca$ uptake was equivalent to tension, i.e. initial significant increase in first 30 second and then decrease. Benzamil treatment abolished the first phase of increase in a dose dependent manner from $10^{-5}\;to\;3{\times}10^{-4}M.$ Bay k 8644 $(3{\times}10^{-5}M)$ treatment enhanced the inotropy induced by frequency reduction and abolished the second and third phase decreases. Benzamil treatment also suppressed the contraction stimulated by Bay K 8644. Although the contraction at 4 Hz stimulation was completely abolished by verapamil $3{\times}10^{-5}\;M$ pretreatment, the contraction reappeared as soon as the stimulation frequency was changed into 0.4 or 1 Hz and interstingly,$^{45}Ca$ uptake were significantly higher than no treatment. From these results, it is concluded that reduction of stimulation frequency causes calcium influx by the reverse mode Na-Ca exchange, resulting in initial rapid increase of twitch tension. then it turns into forward mode exchange to efflux the calcium, resulting in decrease of the twitch tension in left atria of rat.

• Journal of the Korean Society of Radiology
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• v.10 no.8
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• pp.597-602
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• 2016

Recent clinical field utilizes the aluminium filter in order to reduce the low-energy photons. However, the usage of the filter can cause adverse effect on the image quality because of the scattered dose that is generated by X-ray hardening phenomenon. Further, usage of filter with improper thickness can be a reason of dose creep phenomenon where unnecessary exposure is generated towards the patient. In this study, the author evaluated the RMS and the RSD analysis in order to have a quantitative evaluation for the effect of forward scattering dose by the filter on the image. as a result of the study, the FSR and the RSD was increased together with the increasing of thickness of the filter. In this study the RSD means the standard deviation of the mean value is relatively size. It can be understood that the signal-to-noise ratio decreases when the average value is taken as a signal and the standard deviation is judged as a noise. The signal-to-noise ratio can understanding as index of resolution at image. Based on these findings, it was quantitatively verified that there is a correlation of the image quality with the FSR by using an additional filter. The results, a 2.5 mmAl which is as recommended by NCRP in the tube voltage of 70 kVp or more showed the 14.6% on the RSD when the filter was not in used. these results are considered able to be utilized as basic data for the study about the filter to improve the quality of the image.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1520-1521
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• 2008

There are several ways to demonstrate white organic light emitting diodes (OLEDs) for displays and solid state lighting applications. Among these approaches are the stacked three primary or two complementary colors light-emitting layers, multiple-doped emissive layer, and excimer and exciplex emission [1-10]. We report on white phosphorescent excimer devices by using two light emitting materials based on platinum complexes. These devices showed a peak EQE of 15.7%, with an EQE of 14.5% (17 lm/W) at $500\;cd/m^2$, and a noticeable improvement in both the CIE coordinates (0.381, 0.401) and CRI (81). Devices with the structure ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 12% FPt (10 nm) /26 mCPy: 2% Pt-4 (15 nm)/BCP (40 nm)/CsF/Al [device 1], ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4 (15 nm)/26 mCPy: 12% FPt (10 nm)/BCP (40 nm)/CsF/Al [device 2], and ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4: 12% FPt (25 nm)/BCP (40 nm)/CsF/Al [device 3] were fabricated. In these cases, the emissive layer was either the double-layer of 26 mCPy:12% FPt and 15 nm 26 mCPy: 2% Pt-4, or the single layer of 26mCPy with simultaneous doping of Pt-4 and FPt. Device characterization indicates that the CIE coordinates/CRI of device 2 were (0.341, 0.394)/75, (0.295, 0.365)/70 at 5 V and 7 V, respectively. Significant change in EL spectra with the drive voltage was observed for device 2 indicating a shift in the carrier recombination zone, while relatively stable EL spectra was observed for device 1. This indicates a better charge trapping in Pt-4 doped layers [10]. On the other hand, device 3 having a single light-emitting layer (doped simultaneously) emitted a board spectrum combining emission from the Pt-4 monomer and FPt excimer. Moreover, excellent color stability independent of the drive voltage was observed in this case. The CIE coordinates/CRI at 4 V ($40\;cd/m^2$) and 7 V ($7100\;cd/m^2$) were (0.441, 0.421)/83 and (0.440, 0.427)/81, respectively. A balance in the EL spectra can be further obtained by lowering the doping ratio of FPt. In this regard, devices with FPt concentration of 8% (denoted as device 4) were fabricated and characterized. A shift in the CIE coordinates of device 4 from (0.441, 0.421) to (0.382, 0.401) was observed due to an increase in the emission intensity ratio of Pt-4 monomer to FPt excimer. It is worth noting that the CRI values remained above 80 for such device structure. Moreover, a noticeable stability in the EL spectra with respect to changing bias voltage was measured indicating a uniform region for exciton formation. A summary of device characteristics for all cases discussed above is shown in table 1. The forward light output in each case is approximately $500\;cd/m^2$. Other parameters listed are driving voltage (Bias), current density (J), external quantum efficiency (EQE), power efficiency (P.E.), luminous efficiency (cd/A), and CIE coordinates. To conclude, a highly efficient white phosphorescent excimer-based OLEDs made with two light-emitting platinum complexes and having a simple structure showed improved EL characteristics and color properties. The EQE of these devices at $500\;cd/m^2$ is 14.5% with a corresponding power efficiency of 17 lm/W, CIE coordinates of (0.382, 0.401), and CRI of 81.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.587-592
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• 2010

We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at $950^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The specific contact resistance was $3.6{\times}10^{-4}{\Omega}cm^2$ after annealing at $950^{\circ}C$. The XRD results of the alloyed contact layer show that formation of $NiSi_2$ layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at $500^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (${\eta}$) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.101-111
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• 2008

This paper introduces a high-speed Reed-Solomon(RS) decoder, which reduces the hardware complexity, and presents an RS decoder based FEC architecture which is used for 40Gb/s optical communication systems. We introduce new pipelined degree computationless modified Euclidean(pDCME) algorithm architecture, which has high throughput and low hardware complexity. The proposed 16 channel RS FEC architecture has two 8 channel RS FEC architectures, which has 8 syndrome computation block and shared single KES block. It can reduce the hardware complexity about 30% compared to the conventional 16 channel 3-parallel FEC architecture, which is 4 syndrome computation block and shared single KES block. The proposed RS FEC architecture has been designed and implemented with the $0.18-{\mu}m$ CMOS technology in a supply voltage of 1.8 V. The result show that total number of gate is 250K and it has a data processing rate of 5.1Gb/s at a clock frequency of 400MHz. The proposed area-efficient architecture can be readily applied to the next generation FEC devices for high-speed optical communications as well as wireless communications.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.12
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• pp.16-21
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• 2007

In this paper, the dual-band voltage-controled oscillator (VCO) using the composite right/left-handed (CRLH) transmission line (TL) and the tunable negative resistance based on the fin diode is presented. It is demonstrated that the CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the phase slope of the CRLH TL, and the frequency ratio of the two operating frequencies can be a non-integer. Each frequency band of VCO has to operate independently, so we have used the tunable negative resistance based on the pin diode. When the forward bias has been into the pin diode, the phase noise of VCO is $-108.34\sim-106.67$ dBc/Hz @ 100 kHz in the tuning range, $2.423\sim2.597$ GHz, whereas when the reverse bias has been fed into the pin diode, that of VCO is $-114.16\sim-113.33$ dBc/Hz @ 100 kHz in the tuning range, $5.137\sim5.354$ GHz.