• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.193-195
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• 2008

This paper proposed dc-dc converter with continuous output current for battery charger. If we charge energy storage device by conventional boost converter, current flows into the discontinuous and as a result reduces the life-time of battery. The output voltage of dc-dc converter should be higher than voltage of across the battery, specially if charging by PV there is a fluctuation of voltage due change of insolation and temperature, therefore will boost and regulate this voltage. The proposal converter includes forward converter and the output voltage of the proposal converter looks like an input voltage and forward output voltage's add. This topology was tested on simulation and experimentation. Simulation and experimentation results indicated that the proposal topology is useful for battery charging because the output current of the converter flows continuously and perfectly.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.400-402
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• 2008

A new interleaved forward converter, adopting series-input parallel-output structure with a common transformer reset circuit, is proposed in this paper. Series-input structure distributes the voltage stress on switches, which makes it suitable for high input voltage application. Paralleling output stage with an interleaving technique enables the circuit handle large output current and reduces filter size. In addition, since two forward converters share one active-clamp circuit for the transformer reset, its primary structure is simplified. All these features make the proposed converter promising for high input voltage applications with high efficiency and simple structure.

• Journal of Power Electronics
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• v.10 no.3
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• pp.245-250
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• 2010

Input-series-output-parallel (ISOP) converters consisting of multiple modular DC/DC converters can enable low voltage rating switches to be used under high voltage input applications. This paper presents a digital control strategy, which can achieve equal sharing of input voltage for a modular ISOP system consisting of two-transistor forward DC/DC converters by forcing the input voltages of neighboring modules to be equal. The proposed scheme is analyzed using small signals analysis based on the state space average method. The performance of the proposed control strategy is verified with an experimental prototype of an ISOP converter made up of three two-switch forward converters.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.7
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• pp.358-363
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• 2004

A new 600 V dual gate transistor employing thyristor action, which incorporates floating PN junction and trench gate IGBT, is proposed to improve the forward current-voltage characteristics and the short circuit ruggedness. Our two-dimensional numerical simulation shows that the proposed device exhibits low forward voltage drop and eliminates the snapback phenomena compared with conventional trench gate IGBT and EST The proposed device achieves high current saturation characteristics by separating floating N+ emitter and cathode. The proposed device achieves low saturation current value compared with conventional devices, and the short-circuit ruggedness is improved. The proposed device may be suitable for the use of high voltage switching applications.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.501-504
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• 2000

In this paper the PC power supply is studied from the point of system stability. The power stage model of a multiple output forward converter with weighted voltage mode control is derived including all the major parasitic components and the small signal model is also derived. Determination of the weighting factors and a design procedure for the loop compensation are presented. Finally the model is verified through the simulation of three output forward converter with SABER.

• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.1
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• pp.19-25
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• 1999

To achieve high efficiency in high power and high frequency applications, reduction of switching losses and noise is very important. In this paper, an improved zero voltage switching forward dc/dc converter is proposed. The proposed converter is constructed by using energy recovery snubbers in parallel with the main switches and output diodes of the conventional forward dc/dc converter. Due to the use of the energy recovery snubbers in the primary and secondary side, the proposed converter achieves zero-voltage-switching turn-off without switching losses for switching devices and output rectification diodes. The complete operating principles and experimental results will be presented.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.505-507
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• 2008

A conventional active-clamp forward (ACF) converter is a favorable candidate in low-to-medium power applications. However, the switches suffer from high voltage stress, i.e., sum of the input voltage and the reset capacitor voltage. Therefore, it is not suitable for high input voltage applications such as a front-end converter of which the input voltage is about 400-$V_{dc}$. To solve this problem, three-switch ACF (TS-ACF) converter, which employs two main switches and one auxiliary switch with low voltage stress, is proposed. Utilizing low-voltage rated switches, the proposed converter is promising for high input voltage applications with high efficiency and low cost.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.833-836
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• 2005

Nano-gap trench is fabricated by the novel electrochemical etching technique using forward biased PN junction formed at the backside of the wafer. PN junction is formed using boron nitride wafer and the concentration of the boron doping is the high value of $1{\times}10^{19}$ $cm^{-3}$. The electro-chemical etching is performed in the 5% HF solution under the forward bias voltage of $1{\sim}2V$. The relationship between the etch rate of the trench and the voltage of the forward bias is investigated and the dependence of the gap for the voltage also examined. The etch rate increase from 0.027 ${\mu}m/min$ to 0.031 ${\mu}m/min$ as the value of the applied voltage increase from 1V to 2V, but the the gap is kept constant value of 40 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.323-326
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• 2003

In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.183-184
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• 2005

In this paper. a new small size Lateral Trench Electrode Power IGBT is proposed. The entire electrode of proposed LIGBT is placed in trench oxide. The forward blocking voltage of the proposed LIGBT is improved by 1.6 times with that of the conventional LIGBT. The forward blocking voltage of proposed LIGBT is 500V. At the same size. a increase of the forward blocking voltage of about 1.6 times relative to the conventional LIGBT is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide. the electric field in the device are crowded to trench oxide. We observed that the characteristics of i the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.