Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Characteristics of 500V LIGBT for Intelligent Power ICs

인텔리전트 파워 IC용 500V급 LIGBT의 전기적 특성에 관한 연구

  • Kang, Ey-Goo (School of Information and Telecommunication, Far East University) ;
  • Sul, Won-Ji (School of Information and Telecommunication, Far East University) ;
  • Seo, Hyun-Ju (School of Information and Telecommunication, Far East University) ;
  • Kim, Hyun-Mi (School of Information and Telecommunication, Far East University) ;
  • Sung, Man-Young (Electrical Engineering. Korea Univ.)
  • 강이구 (극동대학교 정보통신학부) ;
  • 설원지 (극동대학교 정보통신학부) ;
  • 서현주 (극동대학교 정보통신학부) ;
  • 김현미 (극동대학교 정보통신학부) ;
  • 성만영 (고려대학교 전기공학과)
  • Published : 2005.07.07
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Abstract

In this paper. a new small size Lateral Trench Electrode Power IGBT is proposed. The entire electrode of proposed LIGBT is placed in trench oxide. The forward blocking voltage of the proposed LIGBT is improved by 1.6 times with that of the conventional LIGBT. The forward blocking voltage of proposed LIGBT is 500V. At the same size. a increase of the forward blocking voltage of about 1.6 times relative to the conventional LIGBT is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide. the electric field in the device are crowded to trench oxide. We observed that the characteristics of i the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

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