• Title/Summary/Keyword: Focused ion beam

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2-D & 3-D Observations on the Microstructure of Super Bainite TRIP Steels using Total Analysis System (TAS(Total Analysis System)을 이용한 SB-TRIP강에서의 2-D & 3-D 미세구조 분석 연구)

  • Seol, J.B.;Lee, B.H.;Park, C.G.
    • Transactions of Materials Processing
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    • v.19 no.1
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    • pp.44-49
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    • 2010
  • It has been widely reported that carbide-free bainitic steels or super-bainite TRIP (SB-TRIP) steels for the automotive industry are a new family of steels offering a unique combination of high strength and ductility. Hence, it is important to exactly evaluate the volume fraction of RA and to identify the 3-D morphology of constituent phases, because it plays a crucial role in mechanical properties. Recently, as electron back-scattered diffraction (EBSD) equipped with focused ion beam (FIB) has been developed, 3-D EBSD technique for materials science are used to these steels. Moreover, newly developed atom probe tomography (APT) technique can provide the exact distribution and chemical concentration of alloying elements in a sub-nm scale. The APT analysis results indicate exactly the distribution and composition of alloying elements in the austenite and bainite phases of SB-TRIP steels with the atomic-scale resolution. And thus, no partitioning of aluminum and manganese atoms was showed between the austenite containing $7.73{\pm}0.39$ at% C and the bainitic ferrite associated with $0.22{\pm}0.06$ at% C in SB-TRIP steel.

Influence of gas mixture ratio on the secondary electron emission coefficient ($\gamma$) fo MgO single crystals and MgO protective layer in AC PDP

  • Lim, Jae-Yong;Jung, J.M.;Choi, M.C.;Ahn, J.C.;Cho, T.S.;Kim, T.Y.;Kim, S.S.;Jung, M.W.;Choi, S.H.;Kim, S.B.;Ko, J.J.;Kim, D.I.;Lee, C.W.;Seo, Y.;Cho, G.S.;Kang, S.O.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04a
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    • pp.145-147
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    • 2000
  • The secondary electron emission coefficient y of MgO single crystal according to the gas mix-ture ratio of Xe, $N_2$ to Ne have been investigated by $\gamma$-focused ion beam system. It is found that the MgO single crystals of (111) crystallinity has the highest $\gamma$ for operating Ne(Xe) ions ranging from 50eV to 200eV throughout this experiment. And it is found that the $\gamma$ for gas mixtures are much smaller than pure Ne ions.

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Effect of Precursor Ratio on the Properties of Inorganic-Organic Hybrid TiO2-SiO2 Coating (유무기 TiO2-SiO2 혼성코팅에 미치는 전구체 배합비율의 영향)

  • Kim, Dong Kyu;Maeng, Wan Young
    • Korean Journal of Materials Research
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    • v.26 no.5
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    • pp.271-280
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    • 2016
  • When a single inorganic precursor is used for the synthesis of a sol-gel coating, there is a problem of cracking on the surface of coating layer. In order to solve this problem of surface cracking, we synthesized inorganic-organic coatings that have hybrid properties of inorganic and organic materials. Sols of various ratios (1:0.07, 0.2, 0.41, 0.82, 1.64, 3.26, 6.54, 13.2) of an inorganic precursor of Tetrabutylorthotitanate ($Ti(OBu)_4$, TBOT) and an organic precursor of ${\gamma}$-Methacryloxy propyltrimethoxysilane (MAPTS) were prepared and coated on stainless steels (SUS316L) by dip coating method. The binding structure and the physical properties of the synthesized coatings were analyzed by FT-IR, FE-SEM, FIB (Focused Ion Beam), and a nano-indenter. Dynamic polarization testing and EIS (electrical impedance spectroscopy) were carried out to evaluate the micro-defects and the corrosion properties of the coatings. The prepared coatings show hybrid properties of inorganic oxides and organic materials. Crack free coatings were prepared when the MAPTS ratio was above a critical value. As the MAPTS ratio increased, the thickness and the corrosion resistance increased, and the hardness decreased.

An investigation on dicing 28-nm node Cu/low-k wafer with a Picosecond Pulse Laser

  • Hsu, Hsiang-Chen;Chu, Li-Ming;Liu, Baojun;Fu, Chih-Chiang
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.4
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    • pp.63-68
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    • 2014
  • For a nanoscale Cu/low-k wafer, inter-layer dielectric (ILD) and metal layers peelings, cracks, chipping, and delamination are the most common dicing defects by traditional diamond blade saw process. Sidewall void in sawing street is one of the key factors to bring about cracks and chipping. The aim of this research is to evaluate laser grooving & mechanical sawing parameters to eliminate sidewall void and avoid top-side chipping as well as peeling. An ultra-fast pico-second (ps) laser is applied to groove/singulate the 28-nanometer node wafer with Cu/low-k dielectric. A series of comprehensive parametric study on the recipes of input laser power, repetition rate, grooving speed, defocus amount and street index has been conducted to improve the quality of dicing process. The effects of the laser kerf geometry, grooving edge quality and defects are evaluated by using scanning electron microscopy (SEM) and focused ion beam (FIB). Experimental results have shown that the laser grooving technique is capable to improve the quality and yield issues on Cu/low-k wafer dicing process.

Transmission Electron Microscopy Characterization of Early Pre-Transition Oxides Formed on ZIRLOTM

  • Bae, Hoyeon;Kim, Taeho;Kim, Ji Hyun;Bahn, Chi Bum
    • Corrosion Science and Technology
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    • v.14 no.6
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    • pp.301-312
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    • 2015
  • Corrosion of zirconium fuel cladding is known to limit the lifetime and reloading cycles of fuel in nuclear reactors. Oxide layers formed on ZIRLO4^{TM}$ cladding samples, after immersion for 300-hour and 50-day in a simulated primary water chemistry condition ($360^{\circ}C$ and 20 MPa), were analyzed by using the scanning transmission electron microscopy (STEM), in-situ transmission electron microscopy (in-situ TEM) with the focused ion beam (FIB) technique, and X-ray diffraction (XRD). Both samples (immersion for 300 hours and 50 days) revealed the presence of the ZrO sub-oxide phase at the metal/oxide interface and columnar grains developed perpendicularly to the metal/oxide interface. Voids and micro-cracks were also detected near the water/oxide interface, while relatively large lateral cracks were found just above the less advanced metal/oxide interface. Equiaxed grains were mainly observed near the water/oxide interface.

Effects of Heat Treatment on the Microstructure and Whisker Growth Propensity of Matte Tin Finish

  • Kim, K.S.
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.2
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    • pp.11-20
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    • 2010
  • The effects of heat treatment on matte pure tin-plated Cu leadframes at high temperature and humidity conditions were investigated. After 1800 hrs of storage at $55^{\circ}C/85%$ RH, approximately 14.5 ${\mu}m$ long striation-shaped whiskers were observed on the surface of the without postbake treatment (WOPB) samples, while no whiskers were found in with postbake treatment (WPB) samples. The preferred orientations of Sn grains in WOPB and WPB sample did not change after the postbake treatment at $125^{\circ}C$ for 1 hr. However, both changed from (112) to (321) and (101), respectively, after 1800 hrs of storage at $55^{\circ}C/85%$ RH. The tensile stress of 8 MPa generated in as-plated sample was changed to a compression stress of 17 MPa after 2 days in room temperature storage. Due to the grain growth during postbake treatment, the WPB samples have more regular grains than the WOPB samples. In the as-plated sample, 0.32 ${\mu}m$ thickness of planar intermetallic compound (IMC) was observed. The IMCs in the WOPB and WPB samples had two distinct layers with large grains of $Cu_6Sn_5$ and with small grains of ${\eta}-Cu_{6.26}Sn_5$.

A New Method for Measuring Residual Stress in Micro and Nano Films (마이크로 및 나노 박막의 잔류응력을 측정하기위한 새로운 방법)

  • Kang, Ki-Ju;Evans, Anthony G.
    • Proceedings of the KSME Conference
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    • 2003.04a
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    • pp.438-444
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    • 2003
  • A new method to measure residual stress in micron and nano scale films is described. In the theory it is based on Linear Elastic Fracture Mechanics. And in the techniques it depends on the combined capability of the focused ion beam (FIB) imaging system and of high-resolution digital image correlation (DIC) software. The method can be used for any film material (whether amorphous or crystalline) without thinning the substrate. In the method, a region of the film surface is highlighted and scanning electron images of that region taken before and after a long slot, depth a, is introduced using the FIB. The DIC software evaluates the displacement of the surface normal to the slot due to the stress relaxation by using features on the film surface. To minimize the influence of signal noise and rigid body movement, not a few, but all of the measure displacements are used for determining the real residual stress. The accuracy of the method has been assessed by performing measurements on a nano film of diamond like carbon (DLC) on glass substrate and on micro film of aluminum oxide thermally grown on Fecrally substrate. It is shown that the new method determines the residual stress ${\sigma}_R=-1.73$ GPa for DLC and ${\sigma}_R=-5.45$ GPa for the aluminum oxide, which agree quite well with ones measured independently.

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Microstructural Analysis of Epitaxial Layer Defects in Si Wafer

  • Lim, Sung-Hwan
    • Korean Journal of Materials Research
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    • v.20 no.12
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    • pp.645-648
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    • 2010
  • The structure and morphology of epitaxial layer defects in epitaxial Si wafers produced by the Czochralski method were studied using focused ion beam (FIB) milling, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Epitaxial growth was carried out in a horizontal reactor at atmospheric pressure. The p-type Si wafers were loaded into the reactor at about $800^{\circ}C$ and heated to about $1150^{\circ}C$ in $H_2$. An epitaxial layer with a thickness of $4{\mu}m$ was grown at a temperature of 1080-$1100^{\circ}C$. Octahedral void defects, the inner walls of which were covered with a 2-4 nm-thick oxide, were surrounded mainly by $\{111\}$ planes. The formation of octahedral void defects was closely related to the agglomeration of vacancies during the growth process. Cross-sectional TEM observation suggests that the carbon impurities might possibly be related to the formation of oxide defects, considering that some kinds of carbon impurities remain on the Si surface during oxidation. In addition, carbon and oxygen impurities might play a crucial role in the formation of void defects during growth of the epitaxial layer.

Self- and Artificially-Controlled ZnO Nanostructures by MOCVD (MOCVD을 이용하여 자발적 및 인위적으로 제어된 산화아연 나노구조)

  • Kim, Sang-Woo;Fujita, Shizuo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.9-10
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    • 2005
  • We report on the fabrication and characterization of self- and artificially-controlled ZnO nanostructures have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanostructures on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing metalorganic chemical vapor deposition (MOCVD) in addition with a focused ion beam (FIB) technique. Widely well-aligned two-dimensional ZnO nanodot arrays ($4{\sim}10^4$ nanodots of 130-nm diameter and 9-nm height over $150{\sim}150{\mu}m^2$ with a period of 750 nm) have been realized by MOCVD on $SiO_2/Si$ substrates patterned by FIB. A low-magnification FIB nanopatterning mode allowed the periodical nanopatterning of the substrates over a large area in a short processing time. Ga atoms incorporated into the surface areas of FIB-patterned nanoholes during FIB engraving were found to play an important role in the artificial control of ZnO, resulting in the production of ZnO nanodot arrays on the FIB-nanopatterned areas. The nanodots evolved into dot clusters and rods with increasing MOCVD growth time.

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Pressure sensing of air flow using multi-walled carbon nanotubes (다중벽 탄소 나노튜브를 이용한 유동 압력 검출)

  • Song, Jin-Won;Lee, Jong-Hong;Lee, Eung-Sug;Han, Chang-Soo
    • Journal of Sensor Science and Technology
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    • v.16 no.5
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    • pp.377-383
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    • 2007
  • We describe the fabrication and characterization of a doubly clamped multi-walled carbon nanotube (MWNT). The device was assembled by an application of electric field in solution. The MWNT was clamped on end of metal trench electrodes in solution and deposited with additional platinum (Pt) on edge of electrode for firmly suspending the MWNT by focused ion beam (FIB). The MWNTs range of diameter and length were 100 to 150 nm and 1.5 to $2{\mu}m$, respectively. Electrical characteristics of fabricated devices were measured by I-V curve and impedance analysis. The mechanical deformation was observed by resistivity in high air pressure. Resonant frequency around 6.8 MHz was detected and resistivity was linearly varied according to the magnitude of air pressure. This device could have potential applications in nanoelectronics and various sensors.