• Applied Microscopy
• /
• 제49권
• /
• pp.4.1-4.2
• /
• 2019

We applied the advanced bitmap-assisted patterning function of focused ion beam to fabricate microscale sculpture of the 'BangTanSoNyeonDan' known as BTS members, the world-wide famous K-pop boyband. With the help of an electron microscope, you can carve your idols on your accessories at micro scale. Fun applications of electron microscopes are not limited to science.

• 한국공작기계학회:학술대회논문집
• /
• 한국공작기계학회 2004년도 춘계학술대회 논문집
• /
• pp.490-493
• /
• 2004

There is great difficulty in machine below 10 micrometers by conventional machining methods, such as micro-EDM. However, ultra micro machining using focused ion beam(FIB) is able to machine to 50 nanometers. Bie ＆ moulds techniques are better than one-to-one machining techniques in regards to production costs in the mass production of ultra size structures. Also, it is advantageous to machine die ＆ moulds to the 10 micrometers level by FIB technique rather than other techniques. It is difficult to machine the three dimensional machining, such as micro lens, using FIB system because of their machining characteristics. In this paper, three dimensional machining techniques were properly introduced, and also experiments showed effectiveness of their techniques.

• 한국공작기계학회:학술대회논문집
• /
• 한국공작기계학회 2004년도 춘계학술대회 논문집
• /
• pp.482-486
• /
• 2004

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies, such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. This paper presents that the recent development and our research goals in FIB nano machining technology are given. The emphasis will be on direct milling, or chemical vapor deposition techniques (CVD), and this can distinguish the FIB technology from the contemporary photolithography process and provide a vital alternative to it. After an introduction to the technology and its FIB principles, the recent developments in using milling or deposition techniques for making various high-quality devices and high-precision components at the micro/nano meter scale are examined and discussed. Finally, conclusions are presented to summarize the recent work and to suggest the areas for improving the FIB milling technology and for studying our future research.

• 한국정밀공학회지
• /
• 제28권2호
• /
• pp.245-250
• /
• 2011

A high-resolution shadow mask, a nanostencil, is widely used for high resolution lithography. This high-resolution shadowmask is often fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. In this study, FIB milling on 500-nm-thin SiN membrane was tested and characterized. 500 nm thick and $2{\times}2$ mm large membranes were made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 60 nm could be made into the membrane. The nanostencil could be used for nanoscale patterning by local deposition through the apertures.

• Nuclear Engineering and Technology
• /
• 제50권2호
• /
• pp.259-267
• /
• 2018

Focused ion beam-scanning electron microscope and electron backscattered diffraction examinations were conducted in the center of a $73\;GWd/t_U\;UO_2$ fuel. They showed the formation of subdomains within the initial grains. The local crystal orientations in these domains were close to that of the original grain. Most of the fission gas bubbles were located on the boundaries. Their shapes were far from spherical and far from lenticular. No interlinked bubble network was found. These observations shed light on previous unexplained observations. They plead for a revision of the classical description of fission gas release mechanisms for the center of high burn-up $UO_2$. Yet, complementary detailed observations are needed to better understand the mechanisms involved.

• 한국정밀공학회지
• /
• 제31권3호
• /
• pp.207-213
• /
• 2014

A study was carried out to fabricate the cutting tool geometry with micro/nanoscale on the single crystal diamond tool by using the FIB. The FIB technique is an ideal tool for TEM sample preparation that allows for the fabrication of electron-transparent foils. The FIB is appropriate techniques to sample and subsequently define the chemical composition and the structural state of mineral inclusion on the micro/nanoscale. The combination of FIB with a SEM allows for 3D information to be obtained from samples including 3D imaging. Cutting strategies were demonstrated to improve the performance of cutting tool geometry and to generate high aspect ratio micro cutting tool. A finely focused beam of 30keV Ga+ ions was used to mill cutting tool shapes for various micro patterns. Therefore FIB sputtering is used to shape a variety of cutting tools with dimensions in the $1-5{\mu}m$ range and cutting edge radii of curvature of under 50nm.

• Applied Microscopy
• /
• 제45권4호
• /
• pp.189-194
• /
• 2015

Backside Ar ion milling technique for the preparation of cross-sectional transmission electron microscopy (TEM) specimens, and backside-ion milling combined with focused ion beam (FIB) operation for electron holography were introduced in this paper. The backside Ar ion milling technique offers advantages in preparing cross-sectional specimens having thin, smooth and uniform surfaces with low surface damages. The back-side ion milling combined with the FIB technique could be used to observe the two-dimensional p-n junction profiles in semiconductors with the sample quality sufficient for an electron holography study. These techniques have useful applications for accurate TEM analysis of the microstructure of materials or electronic devices such as arrayed hole patterns, three-dimensional integrated circuits, and also relatively thick layers (> $1{\mu}m$).

• 한국진공학회지
• /
• 제22권5호
• /
• pp.262-269
• /
• 2013

집속 이온빔 장비는 나노크기의 패턴을 제작하는 한 방법이지만, 정밀한 제작은 쉽지 않다. 그러므로 집속 이온빔 장비로 샘플을 제작할 때 고려해야 하는 공정 조건을 정리하여 초보자도 샘플제작이 가능하도록 도움을 주고자 한다. 본 장비로 원하는 나노크기의 패턴을 제작하기 위해서 집속 이온빔 장비의 공정변수들을 최적화 하는 과정이 중요하다. 가공할 때 고려해야 하는 변수에는 빔 전류량(빔 크기)과 도즈(빔 지속시간)가 있다. 도즈를 결정한 후에 패턴을 제작하는데 걸리는 시간과 패턴의 크기를 고려하여 빔 전류량을 선택하면 된다. 여기서 도즈는 제작하려는 나노크기의 패턴의 금속 두께에 따라 결정이 된다. 이 논문에서 최적화한 1 pA의 빔 전류와 $0.1nC/{\mu}m^2$의 도즈의 공정조건에서 100 nm 두께의 금 박막 위에 타원형의 구멍을 정밀하게 제작할 수 있다.

• 한국공작기계학회:학술대회논문집
• /
• 한국공작기계학회 2005년도 춘계학술대회 논문집
• /
• pp.19-23
• /
• 2005

In order to develop a high brightness ion source using plasma, the ion beam extraction system with an aperture of $100{\mu}m$ in diameter has been designed and constructed. It is observed that over 500nA of He ion beam current can be extracted. With such an optimized condition, $\~10^3\;A/cm^2sr$ beam brightness can be measured by emittance scanner, which is believed to be a promising result for developing next generation FIB.

• 한국정밀공학회지
• /
• 제28권1호
• /
• pp.19-23
• /
• 2011

Recently, focused ion beam (FIB) applications have been investigated for the modification of VLSI circuit, the MEMS processing, and the localized ion doping, A multi aperture FIB system has been introduced as the demands of FIB applications for high speed and large area processing increase. A liquid metal ion source has problems, a large angular divergence and a metal contamination into a substrate. In this study, a gas ion source was introduced to replace a liquid metal ion source. The gas ion source generated inductively coupled plasma (ICP) in a quartz tube (diameter: 45 mm). Ar gas fed into the quartz was ionized by a 2 turned radio frequency antenna. The Ar ions were extracted by 2 extraction grids. The maximum extraction voltage was 10 kV. A numerical simulation was used to optimize the design of extraction grids and to predict an ion trajectory. As a result, the maximum ion current density was 38 $mA/cm^2$ and the spread of ion energy was 1.6 % for the extraction voltage.