• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.37-45
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• 2008

In this study, reliabilities of Cu (60 um)/SnAg (20 um) double-bump flip chip assemblies were investigated for the flip chip interconnections on organic substrates with 100 um pitch. After multiple reflows at $250^{\circ}C\;and\;280^{\circ}C$, bump contact resistances were almost same regardless of number of reflows and reflow temperature. In the high temperature storage test, there was no bump contact resistance change at $125^{\circ}C$ up to 2000 hours. However, bump contact resistances slightly increased at $150^{\circ}C$ due to Kirkendall voids formation. In the electromigration test, Cu/SnAg double-bump flip chip assemblies showed no electromigration until about 600 hours due to reduced local current density. Finally, in the thermal cycling test, thermal cycling failure mainly occurred at Si chip/Cu column interface which was found out the highest stress concentration site in the finite element analysis. As a result, Al pad was displaced out under thermal cycling. This failure mode was caused by normal compressive strain acting Cu column bumps along perpendicular direction of a Si chip.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.75-80
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• 2013

According to advance of electronic packaging technology, electronic package becomes smaller. Miniaturization of package causes the temperature rise of package. This can degrade life of electronic device and generate the failure of electronic system. In this study, we proposed a new semi-embedded structure with micro pattern for maximizing heat dissipation. A proposed structure showed the characteristics which have maximum temperature lower than $20^{\circ}C$ compared with conventional structure. And also, in view of thermal stress and strain, our structure showed a remarkably low value compared with other ones. We expect that the new structure proposed in this work can be applied to an flip-chip package of the future.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 1999.12a
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• pp.45-61
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• 1999

General trend in electronics industry towards multimedia in the 21 century is presented here. All equipments require fast graphic processing together with thin and lightweight assembly technology. In Japan, CSP was developed and applied to mobile equipments for several years, and recently stacked die assembly technology is being developed. In addition, so-called flip chip technology is also being developed and which is applied to MCP and MCM little by little these days. Here current packaging technology in Japan is presented including above.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.09a
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• pp.219-225
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• 2002

This paper presents a novel "bumpless flip chip package"for cost! performance driven devices. Using the conventional electroplating and etching processes, this package enables the production of fine pitch BGA up to 256 I/O with single layer routing. An array of circuitry down to $25-50{\mu}{\textrm}{m}$ line/space is fabricated to fan-in and fan-out of the bond pads without using bumps or substrate. Various types of joint methods can be applied to connect the fine trace and the bond pad directly. The resin-filled terminal provides excellent compliancy between package and the assembled board. More interestingly, the thin film routing is similar to wafer level packaging whereas the fan-out feature enables high lead count devices to be accommodated in the BGA format. Details of the design concepts and processing technology for this novel package are discussed. Trade offs to meet various cost or performance goals for selected applications are suggested. Finally, the importance of design integration early in the technology development cycle with die-level and system-level design teams is highlighted as critical to an optimal design for performance and cost.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.57-64
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• 2007

New Chip-on-glass technology to attach an Si chip directly on the glass substrate of LCD panel was studied with local heating method of the Si chip by using thin film heater fabricated on the Si chip. Square-shaped Cu thin film heater with the width of $150\;{\mu}m$, thickness of $0.8\;{\mu}m$, and total length of 12.15 mm was sputter-deposited on the $5\;mm{\times}5\;mm$ Si chip. With applying current of 0.9A for 60 sec to the Cu thin film heater, COG bonding of a Si chip to a glass substrate was successfully accomplished with reflowing the Sn-3.5Ag solder bumps on the Si chip.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.35-40
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• 2000

MCM technology languished troughout most of the 1990's due to high costs resulting from low yields and issues with known god die. During the last five years of the decade new developments in chip scale packages and high density, build up multi-layer printed wiring boards created new opportunities to design and produce ultra miniaturized modules using conventional surface mount manufacturing capabilities. Focus on the miniaturization of substrate based packages such as ball grid arrays (BGAs) resulted in chip scale packages (CSPs) offering many of the benefits of flip chip along with the handling, testing, manufacturing and reliability capabilities of packaged deviced. New developments in the PWB industry sought to reduce the size, weight, thickness and cost of high density interconnect (HDI) substrates. Shrinking geometries of vias and new constructions significantly increased the interconnect density available for MCM-L applications. This paper describes the most promising CSP and HDI technologies for portable products, high performance computing and dense multi-chip modules.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.111-119
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• 2005

Stack specimen with three dimensional interconnection structure through Cu via of $75{\mu}m$ diameter, $90{\mu}m$ height and $150{\mu}m$ pitch was successfully fabricated using subsequent processes of via hole formation with Deep RIE (reactive ion etching), Cu via filling with pulse-reverse electroplating, Si thinning with CMP, photolithography, metal film sputtering, Cu/Sn bump formation, and flip chip bonding. Contact resistance of Cu/Sn bump and Cu via resistance could be determined ken the slope of the daisy chain resistance vs the number of bump joints of the flip chip specimen containing Cu via. When flip- chip bonded at $270^{\circ}C$ for 2 minutes, the contact resistance of the Cu/Sn bump joints of $100{\times}100{\mu}m$ size was 6.7m$\Omega$ and the Cu via resistance of $75{\mu}m$ diameter, $90{\mu}m$ height was 2.3m$\Omega$.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.35-45
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• 2002

The stresses of the underfill/chip interface due to thermal loading was studied using the finite element method. At first, the effective properties of underfill for several volume fractions of silica particles were calculated by Mori-Tanaka method for three different material sets, and the parameters of singularity for the bimaterial edge and the bimaterial wedge were calculated. Consequently, the stresses at the underfill/chip interface with volume fraction of silica particles were investigated. Five different geometric models of flip-chip assembly involving two kinds of bimaterial strips and three kinds of three-layer models were considered under the assumption that the underfill is homogeneous. It was assumed that all components of the flip-chip assembly were linear elastic and isotropic, and their properties were temperature independent. The analysis was conducted in the context of the uncoupled plane thermo-elasticity under a plane strain assumption.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.45-50
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• 2003

Global full 3D finite element analysis fatigue models are constructed for flip-chip BGA on system board to predict the creep fatigue life of solder joints during the thermal cycling test. The fatigue model applied is based on Darveaux's empirical equation approach with non-linear viscoplastic analysis of solder joints. The creep life was estimated the creep life as the variations of the four kinds of thermal cycling test conditions, pad structure, composition and size of solder ball. The shortest fatigue life was obtained at the thermal cycling test condition from $-65^{\circ}C$ to $150^{\circ}C$. It was increased about 3.5 times in comparison with that from $0^{\circ}C$ to $100^{\circ}C$. At the same conditions, the fatigue life of SMD structure as the change of pad structure increased about 5.7% as compared with NSMD structure. Consequently, it was confirmed that the fatigue life became short as the creep strain energy density increased in solder joint.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.9-17
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• 2008

Cu mushroom bumps were formed by electrodeposition and flip-chip bonded to Sn substrate pads. Contact resistances of the Cu-mushroom-bump joints were measured and compared with those of the Sn-planar-bump joints. The Cu-mushroom-bump joints, processed at bonding stresses ranging from 19.1 to 95.2 MPa, exhibited contact resistances near $15m\Omega$/bump. Superior contact-resistance characteristics to those of the Sn-planar-bump joints were obtained with the Cu-mushroom-bump joints. Contact resistance of the Cu-mushroom-bump joints was not dependent upon the thickness of the as-elecroplated Sn-capcoating layer ranging from $1{\mu}m$ to $4{\mu}m$. When the Sn-cap-coating layer was reflowed, however, the contact resistance was greatly affected by the thickness and the reflow time of the Sn-cap-coating layer.