• Journal of Internet Computing and Services
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• v.19 no.4
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• pp.53-63
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• 2018

The traditional mass media function of conveying information and forming public opinion has rapidly changed into an environment in which information and opinions are shared through social media with the development of ICT technology, and such social media further strengthens its influence. In other words, it has been confirmed that the influence of the public opinion through the production and sharing of public opinion on political, social and economic changes is increasing, and this change is already in use on the political campaign. In addition, efforts to grasp and reflect the opinions of the public by utilizing social media are being actively carried out not only in the political area but also in the public area. The purpose of this study is to explore the possibility of using social media based public opinion in educational policy. We collected media data, analyzed the main topic and probability of occurrence of each topic, and topic trends. As a result, we were able to catch the main interest of the public(the 'Domestic Computer Education Time' accounted for 43.99%, and 'Prime Project Selection' topics was 36.81% and 'Artificial Intelligence Program' topics was 7.94%). In addition, we could get a suggestion that flexible policies should be established according to the timing of the curriculum and the subject of the policy even if the category of the policy is same.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.52-52
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• 2012

최근 선진국을 중심으로 제조기술의 산업혁명이라고 불릴 정도로 큰 파급효과가 기대되는 자기조립기반의 산업공정기술을 확보하기 위한 많은 노력과 연구들이 활발하게 진행되고 있다. 자기조립(Self-Assembly) 현상은 자연에서 일어나는 자발적인 힘으로 원자 또는 분자 단위까지 구조물을 제어하고 bottom-up 방식(상향식: 원자/분자 스케일의 나노구조를 배열/조립하여 원하는 형태의 패턴을 만들어 내는 방식)으로 원하는 구조물을 설계/제작할 수 있는 능력을 가지고 있다. 기초적인 과학으로부터 출발한 자기조립기술은 최근 자기조립 응용개발에서 많은 성과를 이루어내면서 산업화 가능성을 크게 하고, 과학계와 산업계의 많은 관심을 불러일으키고 있다. 반도체 산업기술을 예측하는 ITRS 로드맵(2005년)에 의하면 directed self-assembly 방법이 새로운 미래 패터닝 기술로 개발되어 2016년경에 사용되고, 자기조립소재로 제작된 다양한 응용소자들은 새로운 미래소자로 개발될 것으로 예상하고 있다. 이에 맞추어 국내 기업들도 diblock copolymer를 이용한 나노패터닝 기술 확보를 위한 연구를 진행하고 있다. 또한 IBM은 자기조립기술을 반도체공정에 실험적으로 적용하여 자기조립기술이 생산 공정에 부분적으로 적용될 가능성이 크다는 것을 보여주었다. 산업계와 함께 학계의 연구센터에서는 산업화를 위한 자기조립 집적화 공정(Integrated process) 개발을 이루기 위하여 체계적으로 연구를 실시하고 있다. 미국의 Northeastern 대학의 CHN(Center for high-rate Nanomanufacturing) 연구센터는 자기조립 집적화에 용이한 새로운 개념의 소자를 제안하고 이를 집적화하기 위한 다양한 공정을 개발하고 있으며, Wisconsin 대학의 NSEC(Nanosacle Science and Engineering Center) 연구센터는 diblock copolymer를 이용한 나노패터닝 기술 개발에서 획기적인 결과를 도출하여 산업계에 적용될 가능성을 높이고 있다. 이와 같은 결과들로부터 앞으로의 자기조립기술에 대한 연구는 3차원 구조물을 제작할 수 있는 집적화 공정에 집중될 것이고, 이를 위하여 새로운 개념의 단순한 구조의 응용소자개발도 함께 추진될 것으로 판단된다. 또한 실용 가능성이 큰 집적화 공정으로 개발하기 위하여 기존의 top-down 방식을 접목한 bottom-up 방식의 자기조립 집적화 공정이 개발될 것으로 예상하고 있다. 이와 함께 자기조립공정은 반복되는 구조를 쉽게 제작할 수 있는 장점을 가지고 있어 다양한 응용소자 [태양전지(solar cell), 연료전지(fuel cell), 유연성 있는 전자기기(flexible electronics), 화면표시 장치(display device)] 제작에 쉽게 이용되어 새로운 산업을 창출할 수 있는 가능성을 보이고 있다. 본 자기조립 연구 센터에서는 이와 같은 자기조립 특성을 제조공정에 적용하여 혁신적인 제조공정기술을 확보하고자 연구를 진행하고 있다. 그러므로 본 발표에서 이와 같은 연구 흐름과 함께 본 센터에서 진행하고 있는 자기조립 제조방법을 소개하고자 한다. 이와 함께 자기조립방법을 이용하여 제작된 다양한 응용소자 개발 결과를 발표하고, 이를 top-down 방식과 접목하여 집적화공정으로 개발하는 전략을 함께 소개하고자 한다.

• 대한공업교육학회지
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• v.41 no.2
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• pp.89-118
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• 2016

In this study, the model of Turtle Ship, which is evaluated as one of the world's first ironclad ship in battle as well as the traditional scientific and technological heritage in Korea, was combined with the Physical Computing Platform(Arduino and App Inventor) that enables students to learn the basic concepts of IT in an easy and fun way. Thus, this study contrived the Physical Computing Platform-based Turtle Ship model which will make the students of Industrial Specialized High School develop the technological literacy and humanities-based knowledge through flexible education out of stereotype and single subject as well as enhance the potential of creative convergence education. The following is a summary of the main results obtained through this study: First, Arduino-based Main-controller design and making is helpful to learn of the hardware and software knowledge about EEC(Electron Electronics Control) and to confirm the basic characteristics and performance of interaction of Arduino and actuators. Second, The fundamental Instructional environments of abilities such as implementing EEC systems, thinking logically, and problem-solving skills were provided by designing of pattern diagram, designing an actuator circuit and making, the creation of sketches as technical programming and developing of mobile app. Thirdly, This is physical computing platform based Turtle ship model that will enable students to bring up their technological literacy and interest in the cultural heritage.

• Journal of KIISE:Computing Practices and Letters
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• v.8 no.1
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• pp.96-106
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• 2002

this paper, we propose a flexible, reusable, and extensible HL7 encoding and decoding framework using a Message Object Model (MOM) and Message Definition Repository (MDR). The MOM provides an abstract HL7 message form represented by a group of objects and their relationships. It reflects logical relationships among the standard HL7 message elements such as segments, fields, and components, while enforcing the key structural constraints imposed by the standard. Since the MOM completely eliminates the dependency of the HL7 encoder and decoder on platform-specific data formats, it makes it possible to build the encoder and decoder as reusable standalone software components, enabling the interconnection of arbitrary heterogeneous hospital information systems(HISs) with little effort. Moreover, the MDR, an external database of key definitions for HL7 messages, helps make the encoder and decoder as resilient as possible to future modifications of the standard HL7 message formats. It is also used by the encoder and decoder to perform a well formedness check for their respective inputs (i. e., HL7 message objects expressed in the MOM and encoded HL7 message strings). Although we implemented a prototype version of the encoder and decoder using JAVA, they can be easily packaged and delivered as standalone components using the standard component frameworks like ActiveX, JAVABEAN, or CORBA component.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.169-169
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• 2010

As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

• Composites Research
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• v.33 no.6
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• pp.371-376
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• 2020

The adhesive strength can be improved through surface treatment. The most common method is to improve physical bonding by varying the surface conditions. This study presents the effect of laser surface treatment on the adhesive strength of CFRP. The surface roughness was patterned using a 1064 nm laser. The effects of the number of laser shots and the direction and length of the pattern on the adhesion of the CFRP/CFRP single joint were investigated through tensile tests. Tests according to ASTM D5868 were performed, and the bonding mechanism was determined by analyzing the damaged surface after a fracture. The optimized number of the laser shots and the optimized depth of the roughness should be required to increase the bonding strength on the CFRP surface. When considering the shear stress in the tensile direction, the roughness pattern in the direction of 45° that increases the length of the fracture path in the adhesive layer resulted in an increase of the adhesive strength. The surface treatment of the bonding surface using a laser is a suitable method to acquire a mechanical bonding mechanism and improve the bonding strength of the CFRP bonding joint. The study on the optimized laser process parameters is required for utilizing the benefits of laser surface processing.

• Journal of IKEEE
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• v.25 no.4
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• pp.625-633
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• 2021

This paper describes a scalable architecture for flexible hardware implementation of Montgomery modular multiplication. Our scalable modular multiplier architecture, which is based on a one-dimensional array of processing elements (PEs), performs word parallel operation and allows us to adjust computational performance and hardware complexity depending on the number of PEs used, N_PE. Based on the proposed architecture, we designed a scalable Montgomery modular multiplier (sMM) core supporting eight field sizes defined in SEC2. Synthesized with 180-nm CMOS cell library, our sMM core was implemented with 38,317 gate equivalents (GEs) and 139,390 GEs for N_PE=1 and N_PE=8, respectively. When operating with a 100 MHz clock, it was evaluated that 256-bit modular multiplications of 0.57 million times/sec for N_PE=1 and 3.5 million times/sec for N_PE=8 can be computed. Our sMM core has the advantage of enabling an optimized implementation by determining the number of PEs to be used in consideration of computational performance and hardware resources required in application fields, and it can be used as an IP (intellectual property) in scalable hardware design of elliptic curve cryptography (ECC).

• Journal of Aerospace System Engineering
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• v.16 no.5
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• pp.1-7
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• 2022

Recently, satellites equipped with high-performance electronics have required higher power consumption because of the advancement of satellite missions. For this reason, the size of the solar panel is gradually increasing to meet the required power budget. Increasing the size and weight of the solar panel is one of the factors that induce the elastic vibration of the flexible solar panel during the highly agile maneuvering of the satellite or the mode of vibration coupling to the satellite or the mode of vibration coupling to the micro-jitter from the on-board appendages. Previously, an additional damper system was applied to reduce the elastic vibration of the solar panel, but the increase in size and mass of system was inevitable. In this study, to overcome the abovementioned limitations, we proposed a high -damping yoke structure consisting of a superplastic SMA(Shape Memory Alloy) laminating a thin FR4 layer with viscoelastic tape on both sides. Therefore, this advantage contributes to system simplicity by reducing vibrations with small volume and mass without additional system. The effectiveness of the proposed superelastic SMA multilayer solar panel yoke was validated through free vibration testing and temperature testing using a solar panel dummy.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.111-118
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• 2023

MXene, a two-dimensional transition metal carbide or nitride, has recently attracted much attention as a lightweight and flexible electromagnetic shielding material due to its high electrical conductivity, good mechanical strength and thermal stability. In particular, the Ti-based MXene, Ti₃C₂T_x and Ti₂CT_x are reported to have the best electrical conductivity and electromagnetic shielding properties in the vast MXene family. Therefore, in this study, Ti₃C₂T_x and Ti₂CT_x films were prepared by vacuum filtration using Ti₃C₂T_x and Ti₂CT_x dispersions synthesized by interlayer metal etching and centrifugation of Ti₃AlC₂ and Ti₂AlC. The electrical conductivity and electromagnetic shielding efficiency of the films were measured after heat treatment at high temperature. Then, X-ray diffraction and photoelectron spectroscopy were performed to analyze the structural changes of Ti₃C₂T_x and Ti₂CT_x films after heat treatment and their effects on electromagnetic shielding. Based on the results of this study, we propose an optimal structure for an ultra-thin, lightweight, and high performance MXene-based electromagnetic shielding film for future applications in small and wearable electronics.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.