• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.1815-1817
• /
• 2000

Plasma display Panels(PDPs) are one of the leading technologies currently under development for large-area high-brightness flat panel displays. However, the luminance and luminous efficiency of at PDPs should be improved. Especially, one of the main factors affecting on the luminance and luminous efficiency of ac PDP may be the phosphor thickness and size of discharge space. In this study, we examined into addressing time, electrical and optical properties as a parameter of the phosphor thickness and the size of discharge space during the display period of ac PDP. It is found out that the optimum phosphor thickness was $50{\mu}m$ and height of discharge space was about $100{\mu}m$.

• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1293-1294
• /
• 2006

OLEDs based on organic thin films are similar to semiconductor base light-emitting diodes in that they were also considered to be one of the next generation flat-panel displays. They are attractive because of low-operating voltage, low power consumption, ease of fabrication, and low cost. In this study, we used poly (3,4-ethylenedioxythiophene)/poly (4-styrenesulfonate) (PE DOT : PSS) as a hole injection layer. In this experiment spin coating method was used with various speed rate. The fundamental structure of the OLEDs was ITO/PEDOT:PSS/NPB/$Alq_3$/Al. As a result, we obtained the enhancement performance of OLEDs when the spin coating speed was 4000 rpm. We obtained a maximum luminance of 24334 $cd/m^2$ at a current density of 967 $mA/cm^2$.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.8 no.4
• /
• pp.738-742
• /
• 2007

The variations in the device characteristics of hydrogenated amorphous thin-film transistors (a-Si:H TFTs) were studied according to the processes of pixel electrode fabrication to make active-matrix flat-panel displays. The off-state current was about 1 pA and the switching ratio was over $10^6$ before fabrication of pixel electrodes; however, the off-state current increased over 10 pA after fabrication of pixel electrodes. Surface treatment on SiNx passivation layers using plasma could improve the off-state characteristics after pixel electrode process. $N_2$ plasma treatment gave the best result. Charge accumulation on the SiNx passivation layer during the deposition of transparent conducting layer might cause the increase of off-state current after the fabrication of pixel electrodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.446-447
• /
• 2007

The rapid thermal annealing effect of transparent IZTO(indium zinc oxide) and IAZO(indium alminium zinc oxide) films grown on glass substrate for solar cell or flat panel displays(FPDs) was studied. We prepared IZTO using RF magnetron sputtering and IAZO using DC co-sputtering method. Subsequently, using rapid thermal annealing(RTA) system, prepared IZTO and IAZO films were annealed at 300, 400, 500, $600^{\circ}C$ for 90sec. In addition, Electrical and optical characteristics were measured by Hall effect measurement and UV/Vis spectrometer examinations, respectively. To analyze structural properties and surface smoothness of the IZTO and IAZO films, XRD and SEM examinations were performed, respectively. It was shown that IZTO and IAZO films exhibited microcrystalline structure over $400^{\circ}C$ and amorphous structural regardless of RTA temperature, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.77-77
• /
• 2007

The development of next generation displays such as flexible display is a major challenge. Most materials and processes in current flat panel display industry cannot be transferred to flexible substrates. Typically, indium tin oxide (ITO) thin films are brittle and need to be deposited at high temperature to achieve an optimal opto-electrical property, therefore ITO films cannot be used as a flexible electrode. Up to date, many alternative materials to ITO have been proposed such as conductive polymers, nanometals, solution deposited transparent conductive oxide(TCO) and carbon nanotubes(CNTs). CNT based transparent conductive films are fabricated on glass and polymer substrates. CNT thin films exhibit a sheet resistance ($R_s$) of nearby $10^3\;{\Omega}/sq$ with a transmittance of around 80% on the visible light range, which is attributed by excellent dispersion and interaction among CNTs, solvents and polymeric binders. This talk will present the current studies, opto-electrical properties, design criteria and its applications for CNT-based transparent conductive films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.10
• /
• pp.837-843
• /
• 2009

$TiO_2$(2 wt.%)-doped ZnO(TZO) films with thickness from 100 nm to 500 nm were prepared on polyethylene naphthalate(PEN) substrate under various rf-power range from 40 W to 80 W. Their electrical and optical properties were investigated as a function of rf-power. We think that these properties were closely related with the crystallization and the film density of TZO films. It was also presumed that the vaporization of the water vapor and other adsorbed particles such as an organic solvents can affect the electrical properties of the conventional transparent conductive oxide(TCO) films. On the other hand, since the TZO film deposited on glass substrate at room temperature with rf-power of 80 W shows a very low resistivity of $7.5\times10^{-4}\;\Omega{\cdot}cm$ and a very excellent transmittance over an average 85% in the visible range, that is comparable to that of ITO films. Therefore, we expect that the TZO films can be used as transparent electrode for optoelectronic devices such as touch-panels, flat-panel displays, and thin-film solar cells.

• Korean Journal of Materials Research
• /
• v.26 no.2
• /
• pp.100-108
• /
• 2016

Zinc Sulfide (ZnS) is one of the II-VI semiconducting materials, having novel fundamental properties and diverse areas of application such as light-emitting diodes (LEDs), electroluminescence, flat panel displays, infrared windows, catalyst, chemical sensors, biosensors, lasers and biodevices, etc. However, despite the remarkable versatility and prospective potential of ZnS, research and development (R&D) into its applications has not been performed in much detail relative to research into other inorganic semiconductors. In this study, based on global patent information, we analyzed recent technical trends and the current status of R&D into ZnS applications. Furthermore, we provided new technical insight into ZnS applicable fields using in-depth analysis. Especially, this report suggests that ZnS, due to its infrared-transmitting optical property, is a promising material in astronomy and military fields for lenses of infrared systems. The patent information analysis in this report will be utilized in the process of identifying the current positioning of technology and the direction of future R&D.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.12 no.9
• /
• pp.4138-4146
• /
• 2011

In surface mount technology, with cellular phones and flat panel displays shrinking in size, the electric goods for making these things are getting smaller as well. Therefore, the technology of mounting components such as 0402 and 0603 Chip is on the rise. The chip mount manufacturing companies have studied the mount technology to prevent the missing insertions or improper insertion. This study suggests arranging the mechanical structure by using fiber sensors to eliminate missing insertions or improper insertions and developing the technology for upgrading system algorithms.

• Journal of the Semiconductor & Display Technology
• /
• v.17 no.2
• /
• pp.57-60
• /
• 2018

Recently, Thin-film transistors (TFTs) are fundamental building blocks for state-of-the-art microelectronics, such as flat-panel displays and system-on-glass. Zinc oxide thin films have the advantage that they can grow at low temperature and can obtain high charge movility. Also the zinc oxide thin film can be used to control the resistance according to the oxygen content, so it is very easy to obtain the desired physical properties. In this paper, we fabricated a zinc oxide thin film on a polished copper substrate through a solution process, then improved the crystallinity through a geat treatment porcess, and studied to transfer it on a flexible substrate after the heat treatment was completed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.34 no.1
• /
• pp.39-43
• /
• 2021

In the case of ZnO:Al thin films, it is the best material that can replace ITO that is mainly used as a transparent electrode in electronic devices such as solar cells and flat-panel displays. In this study, ZnO:Al films were fabricated by using the RF dual magnetron sputtering method at various substrate temperatures. As the substrate temperature increased, the crystallinity of the ZnO:Al thin films was improved, and the electrical conductivity and electrical properties of the thin film improved owing to the increase in grain size. In addition, the surface roughness of the ZnO:Al thin films increased due to changes in the surface and density of the thin films. Moreover, the substrate temperature increased the density of thin films and improved their transmittance. To be applied to solar cells and other several electronic devices in the future, the hardness and adhesion properties of the thin film improve as the substrate temperature increases.