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http://dx.doi.org/10.4313/JKEM.2009.22.10.837

Electrical and Optical properties of TiO2-doped ZnO Films prepared on PEN by RF-magnetron Sputtering Method  

Kim, Hwa-Min (대구가톨릭대학교 전자공학과)
Sohn, Sun-Young (대구가톨릭대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.10, 2009 , pp. 837-843 More about this Journal
Abstract
$TiO_2$(2 wt.%)-doped ZnO(TZO) films with thickness from 100 nm to 500 nm were prepared on polyethylene naphthalate(PEN) substrate under various rf-power range from 40 W to 80 W. Their electrical and optical properties were investigated as a function of rf-power. We think that these properties were closely related with the crystallization and the film density of TZO films. It was also presumed that the vaporization of the water vapor and other adsorbed particles such as an organic solvents can affect the electrical properties of the conventional transparent conductive oxide(TCO) films. On the other hand, since the TZO film deposited on glass substrate at room temperature with rf-power of 80 W shows a very low resistivity of $7.5\times10^{-4}\;\Omega{\cdot}cm$ and a very excellent transmittance over an average 85% in the visible range, that is comparable to that of ITO films. Therefore, we expect that the TZO films can be used as transparent electrode for optoelectronic devices such as touch-panels, flat-panel displays, and thin-film solar cells.
Keywords
TCO film; ZnO:$TiO_2$ film; RF-magnetron sputtering; Resistivity; Film density;
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Times Cited By KSCI : 4  (Citation Analysis)
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