• Journal of the Korean Chemical Society
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• v.44 no.3
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• pp.243-248
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• 2000

Oganic electroluminescent devices (OELD) with multilayer structures have been studied actively for the application to a flat-panel display. Netal-chelate complexes hrboxylate. These complexes were characterized by FT-IR, MS/FAB, $^1$H-NMR, UV-vis and photoluminescence (PL). More importantly, the electrochemical gap (Eg), electron affinity(EA) and ionization potential (IP) of these complex films were investigated. Data from cyclic voltammetry(CV) were compared with the bandgap obtained from UV-vis and discussed. Further studies on the EL of these new materials are now in progress.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.79-79
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• 1999

The varous techniques for fabrication of si or metal tip as a field emission electron source have been reported due to great potential capabilities of flat panel display application. In this report, 240nm thermal oxide was initially grown at the p-type (100) (5-25 ohm-cm) 4 inch Si wafer and 310nm Si3N4 thin layer was deposited using low pressure chemical vapor deposition technique(LPCVD). The 2 micron size dot array was photolithographically patterned. The KOH anisotropic etching of the silicon substrate was utilized to provide V-groove formation. After formation of the V-groove shape, dry oxidation at 100$0^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have a etch-mask for dry etching. The thicknesses of the grown oxides on the (111) surface and on the (100) etch stop surface were found to be ~330nm and ~90nm, respectively. The reactive ion etching by 100 watt, 9 mtorr, 40 sccm Cl2 feed gas using inductively coupled plasma (ICP) system was performed in order to etch ~90nm SiO layer on the bottom of the etch stop and to etch the Si layer on the bottom. The 300 watt RF power was connected to the substrate in order to supply ~(-500)eV. The negative ion energy would enhance the directional anisotropic etching of the Cl2 RIE. After etching, remaining thickness of the oxide on the (111) was measured to be ~130nm by scanning electron microscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.304.1-304.1
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• 2014

Flat-panel displays have been growing as an essential everyday product in the current information/communication ages in the unprecedented speed. The forward-coming applications require light-weightness, higher speed, higher resolution, and lower power consumption, along with the relevant cost. Such specifications demand for a new concept-based materials and applications, unlike Si-based technologies, such as amorphous Si and polycrystalline Si thin film transistors. Since the introduction of the first concept on the oxide-based thin film transistors by Hosono et al., amorphous oxide thin film transistors have been gaining academic/industrial interest, owing to the facile synthesis and reproducible processing despite of a couple of shortcomings. The current work places its main emphasis on the binary oxides composed of ZnO and SnO2. RF sputtering was applied to the fabrication of amorphous oxide thin film devices, in the form of bottom-gated structures involving highly-doped Si wafers as gate materials and thermal oxide (SiO2) as gate dielectrics. The physical/chemical features were characterized using atomic force microscopy for surface morphology, spectroscopic ellipsometry for optical parameters, X-ray diffraction for crystallinity, and X-ray photoelectron spectroscopy for identification of chemical states. The combined characterizations on Zn-Sn-O thin films are discussed in comparison with the device performance based on thin film transistors involving Zn-Sn-O thin films as channel materials, with the aim to optimizing high-performance thin film transistors.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.117-117
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• 2000

높은 광학적 투과성과 전기전도성을 갖는 ITO film은 solar cell같은 optoelectronic device나 휴대용 소형 TV, flat panel display 등의 투명전극으로 그 응용 분야가 광범위하여 많은 연구가 수행되어져 왔다. 기판으로서 유리를 사용할 때 생기는 활용범위 제한을 극복하고자 최근 유기물 위에 증착이 가능한 저온 증착방법에 대한 연구가 활발히 이루어지고 있다. 그 가운데 이온빔과 같은 energetic한 beam을 이용한 박막의 제조는 기판을 플라즈마 발생지역으로부터 분리시켜 이온빔의 flux 및 에너지, 입사각 등의 자유로운 조절을 통해 상온에서도 우수한 성질의 박막형성 가능성이 제시되어 지고 있다. ITO박막을 형성하는 방법 중 스프레이법이나 CVD법과 같은 화학적 증착방법은 증착시 350-50$0^{\circ}C$의 고온이 필요하고 현재 가장 많이 응용되어 지고 있는 sputter법은 15$0^{\circ}C$정도의 가열이 필요하므로 앞으로 응용가능성이 매우 커서 많은 연구가 진행중인 플라스틱과 아크릴 같은 flexible 한 기판위 증착에 적용이 불가능하다. 본 실험에서는 IBAD(Ion Beam Assisted Deposition)법을 이용하여 저온 ITO film을 유리와 유기막위에 증착하는 연구를 수행하였다. 유기막위에 증착된 ITO는 보다 가볍고 충격에 강하고 유리에 못지 않은 투과성을 가지고 있으나 현재 film의 quality 향상에 대한 요구가 증대되어 지고 있는 실정이다. 따라서, 본 실험에서는 dual oxygen ion gun의 조건변화에 따른 ITO film의 특성변화를 관찰하였다. 고정된 증？율에 한 개 ion gun에 ion flux를 고정시킨 후 또 다른 ion gun에서 발생하는 oxygen radical의 영향을 조사하였으며 oxygen radical의 rf power에 따른 변화는 OES(Optical emission spectroscopy)를 사용하였다. 너무 적은 oxygen ion beam flux나 oxygen radical은 film의 전도도 및 투과도를 저하시켰고 반면 너무 과도한 flux의 증가 시는 전도도는 감소하였고 투과도는 증가하는 경향을 보였다. 기판에 도달하는 oxygen ion flux는 faraday cup을 이용하여 측정하였으며 증착된 ITO film은 XPS, UV-spectrometer, 4-point probe를 이용하여 분석하였다.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.101-105
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• 2015

ZnO is gathering great interest for large square optoelectrical devices of flat panel display (FHD) and solar cell as a transparent conductive oxide (TCO). Herewith, Mg and IIIA (Al, In) co-doped ZnO films were prepared on SLG substrate using RF magnetron sputtering system. The effect of variation of atomic weight % of Mg and ZnO have been investigated. The atomic weight % Al and In are of 3% and kept constant throughout. The numbers of samples were prepared according to their different contents, which are $M_{3%}AZO_{94%}$, $M_{4%}AZO_{93%}-(MAZO)$ and $M_{3%}IZO_{94%}$, $M_{4%}IZO_{93%}-(MIZO)$ respectively. A RF power of 225 W and working pressure of 6 m Torr was used for the deposition at $300^{\circ}C$. All of the two thin film show good uniformity in field emission scanning electron microscopy image. $M_{3%}AZO_{94%}$ thin film shows overall better performance among the all. The film shows the best lowest resistivity, carrier concentration, mobility and Sheet resistance and is found to be are of $8.16{\times}10^{-4}{\Omega}cm$, $4.372{\times}10^{20}/cm^3$, $17.5cm^2/vs$ and $8.9{\Omega}/sq$ respectively. Also $M_{3%}AZO_{94%}$ thin film shows the relatively high optical band gap energy of 3.7 eV with high transmittance more than 80% in visible region required for the better solar cell performance.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.117-124
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• 2007

The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{\sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{\times}10^{-4}{\Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{\sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{\times}10^{-4}{\Omega}cm\;to\;2.3{\times}10^{-4}{\Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{\times}10^{20}/cm^3\;to\;6.4{\times}10^{20}/cm^3$, from $20.4cm^2/Vsec\;to\;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{\sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.5
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• pp.312-320
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• 2003

This work describes an 8b 200 MHz 0.18 urn CMOS analog-to-digital converter (ADC) based on a pipelined architecture for flat panel display applications. The proposed ABC employs an improved bootstrapping technique to obtain wider input bandwidth than the sampling tate of 200 MHz. The bootstrapuing technique improves the accuracy of the input sample-and-hold amplifier (SHA) and the fast fourier transform (FFT) analysis of the SHA outputs shows the 7.2 effective number of bits with an input sinusoidal wave frequency of 500 MHz and the sampling clock of 200 MHz at a 1.7 V supply voltage. Merged-capacitor switching (MCS) technique increases the sampling rate of the ADC by reducing the number of capacitors required in conventional ADC's by 50 % and minimizes chip area simultaneously. The simulated ADC in a 0.18 um n-well single-poly quad-metal CMOS technology shows an 8b resolution and a 73 mW power dissipation at a 200 MHz sampling clock and a 1.7 V supply voltage.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.5
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• pp.456-463
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• 2015

Nowadays, small quantity batch production, which is so-called a flexible manufacturing system, is a major trend in the modern factory automation industry. The demands for new transportation system are increased gradually, with which multiple passive carriers carrying materials and semi-products are precisely and individually controlled along a single closed rail. Thus, a new type of permanent magnet linear synchronous motor (PMLSM), which consists of state coils on a single rail and PM movers as many as carriers, is proposed in this paper. The rail can be segmented as modules with pairs of coils and a current amplifier, which makes the transportation system simple; therefore, the rail can be easily extended and repaired. A design method of the new PMLSM with a single carrier is proposed, which can be thought as a new version of PMLSM, a coil-segmented coreless PMLSM (CS-CLPMLSM). Experimental setup for it is made, and propulsion results show that with the help of a new effective coil selection and switching algorithms, the conventional current-based vector control is sufficient to fulfill the position and velocity control of the new PMLSM. The proposed PMLSM is expected to fulfill seamless servo-control of multiple carriers also in process line, such as a new generation of flat panel display manufacturing line.

• Korean Journal of Optics and Photonics
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• v.20 no.6
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• pp.334-338
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• 2009

Recently, with increasing demand for flat-panel display product, methods for large area patterning are required. TIR (total internal reflection) holographic photo-lithography isstudied as one of the methods of large area lithography. In conventional TIR holography, light sources for hologram recording and image reconstruction are coherent beams such as laser beams. If the image is reconstructed with an incoherent light source such a UV lamp, the image noise from the coherence of light will be reduced and the UV lamp will be a better light source for large area exposure. We analyzed the effect of spectral bandwidth and angular bandwidth of the light source in image reconstruction and verified image blurring with experiments. For large area patterning which has micro-scale line width, it is expected that TIR holographic photo lithography by UV lamp will become a low-noise and low-priced technique.

• Journal of the Korean Institute of Gas
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• v.22 no.1
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• pp.78-85
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• 2018

In this study, we analyzed risks of the fabrication process equipment and cleanroom for semiconductor/flat panel display (FPD) manufacturing facilities and studied the fundamental safety measures for the risk factors. We examined the explosion proof design models considering the specificity of equipment and environment, and planned to utilize the findings to provide technical standards and grounds for designing and manufacturing related equipment. We believe that this study will contribute to the establishment of technical standards for semiconductor/FPD industry and businesses in many different ways by providing optimized modeling of high-risk explosion site detection, developing safety standards and hazard countermeasures and voluntary activation of safety certification system for operation of fabrication process equipment.