• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.6 s.360
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• pp.34-41
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• 2007

We popose a programmed on-line to FSM-based Programmable BIST(Buit-In Self-Test) with selected command, to select a test algorithm from a predetermined set of algorithms that are built in the Flash memory BIST. Thus, the proposed scheme greatly simplifies the testing process. Besides, the proposed FSM-based Programmable BIST is more efficient in terms of circuit size and test data to be applied, and it requires less time to configure the Flash memory BIST. We also will develop a programmable Flash memory BIST generator that automatically produces Verilog code of the proposed BIST architecture for a given set of test algorithms. If experiment the proposed method, the proposed method will achieves a good flexibility with smaller circuit size compared with previous methods.

• Journal of Information Processing Systems
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• v.11 no.3
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• pp.389-405
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• 2015

Most traditional database systems exploit a record-oriented model where the attributes of a record are placed contiguously in a hard disk to achieve high performance writes. However, for read-mostly data warehouse systems, the column-oriented database has become a proper model because of its superior read performance. Today, flash memory is largely recognized as the preferred storage media for high-speed database systems. In this paper, we introduce a column-oriented database model based on flash memory and then propose a new column-aware flash indexing scheme for the high-speed column-oriented data warehouse systems. Our index management scheme, which uses an enhanced $B^+$-Tree, achieves superior search performance by indexing an embedded segment and packing an unused space in internal and leaf nodes. Based on the performance results of two test databases, we concluded that the column-aware flash index management outperforms the traditional scheme in the respect of the mixed operation throughput and its response time.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.147-155
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• 2017

A new endurance test-pattern generation on NAND-flash memory is proposed to improve test cost. We mainly focus on the correlation between the data-pattern and the device error-rate during endurance testing. The novelty is the development of testing method using quasi-random pattern based on device architectures in order to increase the test efficiency during time-consuming endurance testing. It has been proven by the experiments using the commercial 32 nm NAND flash-memory. Using the proposed method, the error-rate increases up to 18.6% compared to that of the conventional method which uses pseudo-random pattern. Endurance testing time using the proposed quasi-random pattern is faster than that of using the conventional pseudo-random pattern since it is possible to reach the target error rate quickly using the proposed one. Accordingly, the proposed method provides more low-cost testing solutions compared to the previous pseudo-random testing patterns.

• Transactions of the Society of Information Storage Systems
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• v.7 no.1
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• pp.7-12
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• 2011

The flash memory has been remarked as the next generation media of portable and desktop computers' storage devices. Their features include non-volatility, low power consumption, and fast access time for read operations, which are sufficient to present flash memories as major data storage components for desktop and servers. The purpose of our study is to upgrade a traditional mirroring scheme based on SSD storages due to the relatively slow or freezing characteristics of write operations, as compared to fast read operations. For this work, we propose a new storage management scheme called Memory Mirror-Switching based on traditional mirroring scheme. Our Mirror-Switching scheme improves flash operation performance by switching write-workloads from flash memory to RAM and delaying write operations to avoid freezing. Our test results show that our scheme significantly reduces the write operation delay and storage freezing.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.69-81
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• 2008

The density of Memory has been increased by great challenge for memory technology, so elements of memory become smaller than before and the sensitivity to faults increases. As a result of these changes, memory testing becomes more complex. The number of storage elements is increased per chip, and the cost of test becomes more remarkable as the cost per transistor drops. Proposed design doesn't need to control from outside environment, because it integrates into memory. The proposed scheme supports the various memory testing algorithms. Consequently, the proposed one is more efficient in terms of test cost and test data to be applied. Moreover, we proposed a reallocation algorithm for faulty memory parts. It has an efficient reallocation scheme with row and column redundant memory. Previous reallocation information is obtained from faulty memory every each tests. However proposed scheme avoids to this problem. because onetime test result from reallocation information can save to flash memory. In this paper, a reallocation scheme has been increased efficiency because of using flash memory.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.313-315
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• 2013

Hand-held devices such as smart phones exploit flash memory based storages to store data for processing jobs. Since the flash memory, non-volatile memory, is able to store mass data, it is required to use the index for processing queries. However, the flash memory has the shortcomings that it does not support the overwrite operation and its write operation is very slow. In this paper, we build the fixed grid file, one of the multi-dimensional spatial index, on a flash memory and evaluate the performance test.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.82-86
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• 2019

The reliability of 3D NAND flash memory cell is affected by the charge migration which can be divided into the vertical migration and the lateral migration. To clarify the difference of two migrations, the activation energy of the charge loss is extracted and compared in a conventional square device pattern and a new test pattern where the perimeter of the gate is exaggerated but the area is same. The charge loss is larger in the suggested test pattern and the activation energy is extracted to be 0.058 eV while the activation energy is 0.28 eV in the square pattern.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.3
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• pp.177-182
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• 2003

In the case of the flash memory, various kinds of transistors and the wide range of operation voltage are necessary to achieve the read/write operations. Therefore, the characteristics of transistors are measured in the silicon for the circuit design, and the test vehicle run must be processed. In this study, an efficient design flow is suggested using TCAD tools. The test vehicle is replaced with well-calibrated TCAD simulation. First, the calibration methodology is introduced and tested for flash memory device. The calibration errors are less than 5% of a full chip operation, which is accepted by the designers. The results of the calibration were used to predict I-V curves and model parameter of the various transistors for the design of flash device.

• Journal of Korea Society of Industrial Information Systems
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• v.20 no.4
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• pp.103-109
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• 2015

This paper presents the development of a ROM writer for shmoo test of a flash memory integrated into the MCU(Micro Controller Unit). A shmoo test is a graphical display of the response of a component or system varying over a range of conditions and inputs. Often used to represent the results of the testing of complex electronic systems such as computers or integrated circuits such as DRAMs, ASICs or microprocessors. A shmoo test and data write time(32k) of the development ROM writer is 6.4 seconds, which was improved by about 20% compared to the rate of the currently used ROM writer.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.1
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• pp.14-17
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• 2005

In this paper, an automated methodology for generating model parameters considering real manufacturing processes is presented with verified results. In addition, the outcomes of applications to the next generation of flash memory devices using the parameters calibrated from the process specification decision are analyzed. The test vehicle is replaced with a well-calibrated TCAD simulation. First, the calibration methodology is introduced and tested for a flash memory device. The calibration errors are less than 5% of a full chip operation, which is acceptable to designers. The results of the calibration are then used to predict the I-V curves and the model parameters of various transistors for the design of flash devices.