• 제목/요약/키워드: Fine-pitch

검색결과 180건 처리시간 0.025초

首都圈地域에서 리기다소나무 生長 減少와 잔뿌리의 非正常 垂直分布 (Growth Decline and Abnormal Vertical Distribution of Fine Roots of Pitch Pine in Seoul Metropolitan Area)

  • Rhyu, Tae-Cheol;Kee-Dae Kim;Joon-Ho Kim
    • The Korean Journal of Ecology
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    • 제17권3호
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    • pp.261-275
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    • 1994
  • 수도권과 그 주변의 33장소의 리기다소나무 숲에서 연륜생장과 잔뿌리의 수직분포를 조사하였다. 생리적 연령이 16년과 20년 사이의 연륜의 생장은 전원지보다 도심지에서 불량하였다. 그리고 최근 5년간 (1985~1989)의 연륜생장은 연령 11년~20년, 연령 21년~30년 및 연령 31년~40년 그룹 모두에서 도심지에서 거리가 멀어짐에 따라 양호하였다. 리기다소나무 잔뿌리의 양은 도심지, 주변지 및 전원지 모두에서 토양의 깊이가 깊어짐에 따라 지수함수적으로 감소하였고, 그 양은 전원지에 비해 도심지에서 매우 적었다. 그리고 전원지의 잔뿌리의 수직분포와 비교해 볼 때, 도심지에서 잔뿌리는 토양층보다 낙엽층에 많이 분포하였다. 그리고 낙엽층 속의 잔뿌리 양과는 유의한 음의 상관이 있었다. 이들 결과로부터 도심지에서 리기다소나무 생장감소는 잔뿌리 생장감소와 잔뿌리의 비정상적인 수직분포에 원인이 있는 것으로 판단되었다.

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Maskless Screen Printing Process using Solder Bump Maker (SBM) for Low-cost, Fine-pitch Solder-on-Pad (SoP) Technology

  • Choi, Kwang-Seong;Lee, Haksun;Bae, Hyun-Cheol;Eom, Yong-Sung
    • 마이크로전자및패키징학회지
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    • 제20권4호
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    • pp.65-68
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    • 2013
  • A novel bumping process using solder bump maker (SBM) is developed for fine-pitch flip chip bonding. It features maskless screen printing process. A selective solder bumping mechanism without the mask is based on the material design of SBM. Maskless screen printing process can implement easily a fine-pitch, low-cost, and lead-free solder-on-pad (SoP) technology. Its another advantage is ternary or quaternary lead-free SoP can be formed easily. The process includes two main steps: one is the thermally activated aggregation of solder powder on the metal pads on a substrate and the other is the reflow of the deposited powder on the pads. Only a small quantity of solder powder adjacent to the pads can join the first step, so a quite uniform SoP array on the substrate can be easily obtained regardless of the pad configurations. Through this process, an SoP array on an organic substrate with a pitch of 130 ${\mu}m$ is, successfully, formed.

HV-SoP Technology for Maskless Fine-Pitch Bumping Process

  • Son, Jihye;Eom, Yong-Sung;Choi, Kwang-Seong;Lee, Haksun;Bae, Hyun-Cheol;Lee, Jin-Ho
    • ETRI Journal
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    • 제37권3호
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    • pp.523-532
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    • 2015
  • Recently, we have witnessed the gradual miniaturization of electronic devices. In miniaturized devices, flip-chip bonding has become a necessity over other bonding methods. For the electrical connections in miniaturized devices, fine-pitch solder bumping has been widely studied. In this study, high-volume solder-on-pad (HV-SoP) technology was developed using a novel maskless printing method. For the new SoP process, we used a special material called a solder bump maker (SBM). Using an SBM, which consists of resin and solder powder, uniform bumps can easily be made without a mask. To optimize the height of solder bumps, various conditions such as the mask design, oxygen concentration, and processing method are controlled. In this study, a double printing method, which is a modification of a general single printing method, is suggested. The average, maximum, and minimum obtained heights of solder bumps are $28.3{\mu}m$, $31.7{\mu}m$, and $26.3{\mu}m$, respectively. It is expected that the HV-SoP process will reduce the costs for solder bumping and will be used for electrical interconnections in fine-pitch flip-chip bonding.

Optimization of Material and Process for Fine Pitch LVSoP Technology

  • Eom, Yong-Sung;Son, Ji-Hye;Bae, Hyun-Cheol;Choi, Kwang-Seong;Choi, Heung-Soap
    • ETRI Journal
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    • 제35권4호
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    • pp.625-631
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    • 2013
  • For the formation of solder bumps with a fine pitch of 130 ${\mu}m$ on a printed circuit board substrate, low-volume solder on pad (LVSoP) technology using a maskless method is developed for SAC305 solder with a high melting temperature of $220^{\circ}C$. The solder bump maker (SBM) paste and its process are quantitatively optimized to obtain a uniform solder bump height, which is almost equal to the height of the solder resist. For an understanding of chemorheological phenomena of SBM paste, differential scanning calorimetry, viscosity measurement, and physical flowing of SBM paste are precisely characterized and observed during LVSoP processing. The average height of the solder bumps and their maximum and minimum values are 14.7 ${\mu}m$, 18.3 ${\mu}m$, and 12.0 ${\mu}m$, respectively. It is expected that maskless LVSoP technology can be effectively used for a fine-pitch interconnection of a Cu pillar in the semiconductor packaging field.

Novel reforming of pyrolized fuel oil by electron beam radiation for pitch production

  • Jung, Jin-Young;Park, Mi-Seon;Kim, Min Il;Lee, Young-Seak
    • Carbon letters
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    • 제15권4호
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    • pp.262-267
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    • 2014
  • Pyrolized fuel oil (PFO) was reformed by novel electron beam (E-beam) radiation, and the elemental composition, chemical bonds, average molecular weight, solubility, softening point, yields, and density of the modified patches were characterized. These properties of modified pitch were dependent on the reforming method (heat or E-beam radiation treatment) and absorbed dose. Aromaticity ($F_a$), average molecular weight, solubility, softening point, and density increased in proportion to the absorbed dose of E-beam radiation, with the exception of the highest absorbed dose, due to modification by free radical polymerization and the powerful energy intensity of E-beam treatment. The H/C ratio and yield exhibited the opposite trend for the same reason. These results indicate that novel E-beam radiation reforming is suitable for the preparation of aromatic pitch with a high ${\beta}$-resin content.

Preparation of pitch from pyrolized fuel oil by electron beam radiation and its melt-electrospinning property

  • Jung, Jin-Young;Lee, Young-Seak
    • Carbon letters
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    • 제15권2호
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    • pp.129-135
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    • 2014
  • Spinnable pitch for melt-electrospinning was obtained from pyrolized fuel oil by electron beam (E-beam) radiation treatment. The modified pitch was characterized by measuring its elemental composition, softening point, viscosity, molecular weight, and spinnability. The softening point and viscosity properties of the modified pitch were influenced by reforming types (heat or E-beam radiation treatment) and the use of a catalyst. The softening point and molecular weight were increased in proportion to absorbed doses of E-beam radiation and added $AlCl_3$ due to the formation of pitch by free radical polymerization. The range of the molecular weight distribution of the modified pitch becomes narrow with better spinning owing to the generated aromatic compounds with similar molecular weight. The diameter of melt-electrospun pitch fibers under applied power of 20 kV decreased 53% ($4.7{\pm}0.9{\mu}m$) compared to that of melt-spun pitch fibers ($10.2{\pm}2.8{\mu}m$). It is found that E-beam treatment for reforming could be a promising method in terms of time-savings and cost-effectiveness, and the melt-electrospinning method is suitable for the preparation of thinner fibers than those obtained with the conventional melt-spinning method.

首都圈地域에서 리기다소나무 잎과 잔뿌리 속의 陽이온 부족 (Cation Deficiencies in Needles and Fine Roots of Pitch Pine in Seoul Metropolitan Area)

  • Rhyu, Tae-Cheol;Kim, Kee-Dae;Kim, Joon-Ho
    • The Korean Journal of Ecology
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    • 제17권3호
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    • pp.277-286
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    • 1994
  • 수도권과 그 주변 지역의 33지소의 리기다소나무 숲에서 리기다소나무 잎과 잔뿌리의 주요이온의 함량을 정량하였다. 잎 속의 N, P, K 및 Mg 함량운 전년도 잎에 비해 당해연도 잎속에 높았지만, Al과 Ca은 그 반대였다. 잎 속의 N, P, K 및 Al 함랴은 지역간의 차이가 없었지만, Ca과 Mg 함량은 전원지에 비해 도심지에서 낮았다. 그러나 잎속의 N/Ca와 N/Mg의 비의 값은 전원지에보다 도심지에서 컸다. 표토 잔뿌리 속의 Mg 함량은 도심으로부터 거리가 멀어짐에 따라 증가하였으나, 심층토 잔뿌리 속의 Al 함량은 그 반대였다. 토양층 잔뿌리 속의Al 함량은 도심지보다 전원지에서 낮았다. 토양층 잔뿌리속의 Al 함량은 낙엽층의 잔뿌리에 비하여 2~3배 높았다. 그리고 표토보다 심층토에 존재하는 잔뿌리 속에 Al 함량이 높았다. 그러므로 수도권 지역에서 리기다소나무의 생장감소는 조직 속의 Ca과 Mg 부족, N/Ca과 N/Mg 비의증가 및 잔뿌리 생장에 대한 Al 독성에 있었다. 그리고 수도권 지역에서 잔뿌리의 비정상적인 분포는 산성토양에서 Al 독성에 의한 잔뿌리의 생장감소가 그 원인으로 해석된다.

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미세피치 연성인쇄회로기판 대응을 위한 NCP 패키징 공정설계 및 분석 (Design and Analysis of NCP Packaging Process for Fine-Pitch Flexible Printed Circuit Board)

  • 심재홍;차동혁
    • 제어로봇시스템학회논문지
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    • 제16권2호
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    • pp.172-176
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    • 2010
  • Recently, LCD (Liquid Crystal Display) requires various technical challenges; high definition, high quality, big size, and low price. These demands more pixels in the fixed area of the LCD and very fine lead pitch of the driving IC which controls the pixels. Therefore, a new packaging technology is needed to meet such technical requirement. NCP (Non Conductive Paste) is one of the new packaging methods and has excellent characteristics to overcome the problems of the ACF (Anisotropic Conductive Film). In this paper, we analyzed the process of the NCP for COF (Chip on FPCB) and proposed the key design parameters of the NCP process. Through a series of experiments, we obtained the stable values of the design parameters for successful NCP process.

플립칩용 웨이퍼레벨 Fine Pitch 솔더범프 형성 (Fabrication of Wafer Level Fine Pitch Solder Bump for Flip Chip Application)

  • 주철원;김성진;백규하;이희태;한병성;박성수;강영일
    • 한국전기전자재료학회논문지
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    • 제14권11호
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    • pp.874-878
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    • 2001
  • Solder bump was electroplated on wafer for flip chip application. The process is as follows. Ti/Cu were sputtered and thick PR was formed by several coating PR layer. Fine pitch vias were opened using via mask and then Cu stud and solder bump were electroplated. Finally solder bump was formed by reflow process. In this paper, we opened 40㎛ vias on 57㎛ thick PR layer and electroplated solder bump with 70㎛ height and 40㎛ diameter. After reflow process, we could form solder bump with 53㎛ height and 43㎛ diameter. In plating process, we improved the plating uniformity within 3% by using ring contact instead of conventional multi-point contact.

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Si Deep Etching Process Study for Fine Pitch Probe Unit

  • 한명수;박일몽;한석만;고항주;김효진;신재철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.296-296
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    • 2012
  • LCD panel 검사를 위한 Probe unit은 대형 TV 및 모바일용 스마트폰을 중심으로 각광을 받고 있는 소모성 부품으로 최근 pitch의 미세패턴화가 급속히 진행되고 있다. 본 연구에서는 Slit Wafer 제작 공정을 최적화하기 위해 25 um pitch의 마스크를 설계, 제작하였다. 단공과 장공을 staggered 형태로 배열하여 25 um/25 um line/space pitch로 설계하였다. 또한 단위실험을 위해 직접 25 um pitch로 설계하여, 동일한 실험조건을 적용하여 최적 조건을 찾고자 하였다. 반응변수는 Etch rate 및 profile angle로 결정하였으며, 약 200~400 um 에칭된 slit의 상단과 하단의 폭, 그리고 식각깊이를 SEM 측정사진을 통해 정한 후 etch rate 및 profile angle을 결정하였다. 인자는 식각속도 및 wall의 각도를 결정하는 식각 및 passivation 가스의 유량, chamber 압력(etching/passivation), 식각시간 등으로 정하였으며, 이들의 최대값과 최소값 2 수준으로 실험계획을 설계하였다. 식각 조건에 따라 8회의 실험을 수행하였다. 가스의 유량은 SF6 400 sccm, C4F8 400 sccm, 식각 싸이클 시간은 5.2~10.4 sec, passivation 싸이클시간 4 sec로 하였으며, 압력은 식각시 7.5 Pa, passivation 시 10 Pa로 할 경우가 가장 sharp하게 나타났다. Coil power 와 platen power는 각각 2.6 KW, 0.14 KW로 하였으며, 최적화를 위한 인자의 값들은 이 범위에서 조절하였다. 이러한 인자의 조건 조절을 통해 etch rate는 5.6 um/min~6.4 um/min, $88.9{\sim}89.1^{\circ}$의 profile angle을 얻을 수 있었다.

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