• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.29-33
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• 2015

This paper presents the results of the optical characteristics of ITO thin film with different buffer layer thicknesses of $SiO_2$ and $Nb_2O_5$ for touch sensor application. $SiO_2$ and $Nb_2O_5$ buffer layers were deposited using RF magnetron sputtering equipment. The buffer layers were inserted between glass and ITO layers. In order to compare with the experimental results, the Essential Macleod Program (EMP) was adopted. Based on EMP simulation, the [$Nb_2O_5{\mid}SiO_2{\mid}ITO$] multi-layered thin film exhibited high transmittance of more than 85% in the visible region. The actual experimental results also showed transmittance of more than 85% in the visible region, indicating that the simulated results were well matched with the experimental results. The sheet resistance of ITO based film was about $340{\Omega}/sq$. The surface roughness maintained a relatively small value within the range of 0.1~0.4 nm when using the $Nb_2O_5$ and $SiO_2$ buffer layers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.318.2-318.2
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• 2014

The high contact resistance is still one of the major issues to be resolved in CdS/CdTe thin film solar cells. CdTe/Metal Schottky contact induced a high contact resistance in CdS/CdTe solar cells. It has been reported that the work function of CdTe thin film is more than 5.7 eV. There has not been a suitable back contact metal, because CdTe thin film has a high work function. In a few decades, some buffer layer was reported to improve a back contact problem. Buffer layers which are Te, $Sb_2Te_3$, $Cu_2Te$, ZnTe:Cu and so on was inserted between CdTe and metal electrode. A formed buffer layers made a tunnel junction. Hole carriers which was excited in CdTe film by light absorption was transported from CdTe to back metal electrode. In this report, we reported the variation of solar cell performance with different buffer layer at the back contact of CdTe thin film solar cell.

• Tribology and Lubricants
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• 제22권4호
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• pp.182-189
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• 2006

In this paper, the adhesion characteristics between a fused silica without or with an anti-sticking layer and a thermoplastic polymer film used in thermal NIL were investigated experimentally in order to identify the release performance of the anti-sticking layer. The anti-sticking layers were derived from fluoroalkylsilanes, (1H, 1 H, 2H, 2H-perfluorooctyl)trichlorosilane ($F_{13}-OTS$) and (3, 3, 3-trifluoropropyl)trichlorosilane (FPTS), and coated on the silica surface in vapor phase. The commercial polymers, mr-I 7020 and 8020 (micro resist technology, GmbH), for thermal NIL were spin-coated on Si substrate with a rectangular island which was fabricated by conventional microfabrication process to achieve small contact area and easy alignment of flat contact sur- faces. Experimental conditions were similar to the process conditions of thermal NIL. When the polymer film on the island was separated from the silica surface after imprint process, the adhesion force between the silica surface and the polymer film was measured and the surfaces of the silica and the polymer film after the separation were observed. As a result, the anti-sticking layers remarkably reduced the adhesion force and the surface damage of polymer film and the chain length of silane affects the adhesion characteristics. The anti-sticking layers derived from FPTS and $F_{13}-OTS$ reduced the adhesion force per unit area to 38% and 16% of the silica sur-faces without an anti-sticking layer, respectively. The anti-sticking layer derived from $F_{13}-OTS$ was more effective to reduce the adhesion, while both of the anti-sticking layers prevented the surface damages of the polymer film. Finally, it is also found that the adhesion characteristics of mr-I 7020 and mr-I 8020 polymer films were similar with each other.

• 센서학회지
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• 제16권6호
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• pp.462-466
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• 2007

Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers, in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. The columnar structure of AlN thin films was observed by FE-SEM. X-ray diffraction pattern proved that the grown AlN film on 3C-SiC layers had highly (002) orientation with low value of FWHM (${\Theta}=1.3^{\circ}$) in the rocking curve around (002) reflections. These results were shown that almost free residual stress existed in the grown AlN film on 3C-SiC buffer layers from the infrared absorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• Transactions on Electrical and Electronic Materials
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• 제13권1호
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• pp.27-30
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• 2012

This paper proposes a micro gas sensor for measuring $H_2S$ gas. This is based on a $SnO_2$-CuO multi-layer thin film. The sensor has a silicon diaphragm, micro heater, and sensing layers. The micro heater is embedded in the sensing layer in order to increase the temperature to an operating temperature. The $SnO_2$-CuO multi layer film is prepared by the alternating deposition method and thermal oxidation which uses an electron beam evaporator and a thermal furnace. To determine the effect of the number of layers, five sets of films are prepared, each with different number of layers. The sensitivities are measured by applying $H_2S$ gas. It has a concentration of 1 ppm at an operating temperature of $270^{\circ}C$. At the same total thickness, the sensitivity of the sensor with multi sensing layers was improved, compared to the sensor with one sensing layer. The sensitivity of the sensor with five layers to 1 ppm of $H_2S$ gas is approximately 68%. This is approximately 12% more than that of a sensor with one-layer.

• 한국초전도ㆍ저온공학회논문지
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• 제8권3호
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• pp.37-40
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• 2006

Oxide buffer layers for YBCO coated conductors were fabricated using MOD processing and development of microstructure and texture were investigated. A $CeO_2$ buffer layers were formed on RABiTS tape. Acetate-based precursor solution was employed to synthesize the precursor solution. Subsequently, the precursor solution was stabilized and modified with triethanolamine. $CeO_2$ precursor gel film was coated and annealed in $Ar/H_2$ atmosphere at high temperature. An annealed $CeO_2$ film shows mixed orientation with high (001) texturing. It was shown that (111) texture of $CeO_2$ layers were enhanced by multiple coating. This degradation was attributed to development of microcracks in the multiply coated $CeO_2$ films. Also discussed are the synthesis and the characterization of $La_2Zr_2O_7$ (LZO) buffer layers on RABiTS tape. A biaxially textured LZO buffer layer was fabricated with MOD processing method using metal alkoxide based precursor solution. It was shown that the LZO film were epitaxially grown on RABiTS tape and crack-free & uniform surface was obtained after annealing in $Ar/H_2$ atmosphere.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.237-237
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• 2009

Zinc oxide (ZnO) thin film was deposited on Si substrates using polycrystalline (poly) 3C-SiC buffer layer, in which the ZnO film was grown by sol-gel method. Physical characteristics of the grown ZnO film was investigated experimentally by means of SEM, XRD, FT-IR (Furier Transform-Infrared spectrum), and AFM. XRD pattern was proved that the grown ZnO film on 3C-SiC layers had highly (002) orientation with low FWHM (Full width of half maxium). These results showed that ZnO thin film grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.190-190
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• 2010

The resistance and recovery properties of the YBCO thin-film wire according to the existence and thickness of an insulting layer, and the kinds of stabilization layers, were analyzed at 90 K, 180 K and 250 K. In this study, YBCO thin-film wires with different stabilizing layers and with insulating layers were examined in terms of their various characteristics, such as quenching occurrence, spread, and distribution, based on their resistance increase trends and their recovery from quenching, and the results were qualitatively explained. The results of this study on the characteristics of YBCO thin-film wires' superconducting and normal-conducting phase changes are expected to be useful in designing superconducting power machines and in improving their performance.

• 접착 및 계면
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• 제20권3호
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• pp.102-109
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• 2019

PET기재 필름 위에 코팅된 다층박막 필름의 층별성분을 ATR FT-IR과 Pyro GC/MS(Gas Chromatography/Mass Spectroscopy)를 이용하여 분석을 시도하였다. 필름의 단면은 액체질소에 담근 후 파괴시켜 얻었으며 광학 현미경을 이용하여 관찰하였다. 이 결과 코팅층의 총 두께는 $70{\mu}m$였으며 3개의 층으로 관찰되었다. 각 층의 두께는 너무 얇기 때문에 표면층을 제외하고는 직접분석이 어려워 적절한 용매로서 각 층을 드러나게 한 후 ATR FT-IR과 pyro-GC/MS를 이용하여 분석을 시도하였다. 이 결과 3개 층은 공통적으로 우레탄-아크릴레이트 공중합체로 밝혀졌다. 또한 무기 혹은 금속성분의 첨가여부는 XPS와 SEM-EDAX를 이용하여 분석하였으며 도장층 (1)에는 나노크기의 실리카 입자가 도장층 (2)에서는 알루미늄 박편이 존재함을 알게 되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.257.2-257.2
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• 2015

In this paper, we report on the 10.33% efficient thin film/bulk tandem solar cells with the top cell made of amorphous silicon thin film and p-type bulk crystalline silicon bottom cell. The tunneling junction layers were used the doped nanocrystalline Si layers. It has to allow an ohmic and low resistive connection. For player and n-layer, crystalline volume fraction is ~86%, ~88% and dark conductivity is $3.28{\times}10-2S/cm$, $3.03{\times}10-1S/cm$, respectively. Optimization of the tunneling junction results in fill factor of 66.16 % and open circuit voltage of 1.39 V. The open circuit voltage was closed to the sum of those of the sub-cells. This tandem structure could enable the effective development of a new concept of high-efficiency and low cost cells.