• 전기학회논문지
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• 제56권5호
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• pp.905-909
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• 2007

Crystalline and micro-structural characteristics of ZnO thin films which were deposited on p-Si(100) with cooling naturally down of pre-heated substrate during RF magnetron sputter deposition, were investigated by XRD and SEM in this paper. The film which was prepared on the substrate which was pre-heated to $400^{\circ}C$ before deposition and then cooled naturally down during deposition, showed the most outstanding c-axis preferred orientation. The ZnO thin film having the best crystalline result were applied to SMR type FBAR device and resonance properties of the device were investigated by network analyzer. It showed that resonance frequency was 2.05 GHz, return loss was -30.64 dB, quality factor was 3169 and electromechanical coupling factor was 0.4 %. This deposition method would be very useful for application of surface acoustic wave filter or film bulk acoustic wave resonator.

• 한국정보통신학회논문지
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• 제5권7호
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• pp.1321-1325
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• 2001

본 논문에서는 압전박막 및 이들의 FBAR소자 응용에 대한 연구를 발표 한다. FBAR소자는 상부 및 하부 전극 사이에 압전체가 삽입되어 있는 공진부와 SiO2/W 이 여러층으로 적층되어 있는 음향반사층부분 크게 두 부분으로 구성되어 있다. 시뮬레이션 및 측정을 통하여 제작된 여러가지 FBAR 소자들을 평가하였다. 실험결과 우수한 삽입손실, 반사손실 및 풀질계수가 얻어졌다. 따라서 FBAR 기술은 RF 대역 필터 응용을 위해서 대단히 유망한 기술로 생각된다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2001년도 추계종합학술대회
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• pp.621-625
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• 2001

본 논문에서는 압전박막 및 이들의 FBAR 소자 응용에 대한 연구를 발표 한다. FBAR 소자는 상부 및 하부 전극 사이에 압전체가 삽입되어 있는 공진부와 SiO$_2$/W 이 여러층으로 적층되어 있는 음향반사층부분 크게 두 부분으로 구성되어 있다. 시뮬레이션 및 측정을 통하여 제작된 여러가지 FBAR 소자들을 평가하였다. 실험결과 우수한 삽입손실, 반사손실 및 품질계수가 얻어졌다. 따라서 FBAR 기술은 RF 대역 필터 응용을 위해서 대단히 유망한 기술로 생각된다.

• 한국세라믹학회지
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• 제43권9호
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• pp.527-531
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• 2006

In order to study the influence of post-annealing treatment on the frequency characteristics of the Li doped ZnO(Li:ZnO) FBAR(Film Bulk Acoustic Resonator) device, we investigated the material and electrical properties of Li:ZnO films in the annealing temperature range from 300 to $500^{\circ}C$. In our samples, as annealing temperature was increased, Li:ZnO films showed the improvement of high c-axis orientation and resistance value with relieved stress and low surface roughness. In addition to, the return loss in the frequency property of fabricated FBAR was improved by annealing treatment from 24.9 to 29.8dB. From experimental results, the optimum post-annealing temperature for FBAR is $500^{\circ}C$ and it can obtain excellent Li:ZnO FBAR performance with stronger c-axis orientation, smoother surface, relieved stress, and lower loss factor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.377-378
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• 2005

In this study, $SiO_2$ thin film was deposited on variable conditions of the RF power and working pressure by RF magnetron sputtering to apply to the Bragg reflector of the SMR type FBAR device. A crystal orientation and microstructure of $SiO_2$ thin film was studied by using the XRD, AFM and SEM. The best condition was obtained through analyzing the structural characteristics of thin film. Finally, FBAR device was fabricated with applying the best condition of $SiO_2$ thin film and the resonant characteristics was investigated by network analyzer to verify application possibility as a efficient device.

• ETRI Journal
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• 제36권2호
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• pp.317-320
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• 2014

A balanced RF duplexer with low interference in an extremely narrow bandgap is proposed. The Long-Term Evolution band-7 duplexer should be designed to prevent the co-existence problem with the WiFi band, whose fractional bandgap corresponds to only 0.7%. By implementing a hybrid bulk acoustic wave (BAW) structure, the temperature coefficient of frequency (TCF) value of the duplexer is successfully reduced and the suppressed interference for the narrow bandgap is performed. To achieve an RF duplexer with balanced Rx output topology, we also propose a novel balanced BAW Rx topology and RF circuit block. The novel balanced Rx filter is designed with both lattice- and ladder-type configurations to ensure excellent attenuation. The RF circuit block, which is located between the antenna and the Rx filter, is developed to simultaneously function as a balance-tounbalance transformer and a phase shift network. The size of the fabricated duplexer is as small as $2.0mm{\times}1.6mm$. The maximum insertion loss of the duplexer is as low as 2.4 dB in the Tx band, and the minimum attenuation in the WiFi band is as high as 36.8 dB. The TCF value is considerably lowered to $-16.9ppm/^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.703-706
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• 2002

Piezoelectric thin film such as ZnO and AlN can be applicable to FBAR (Film Bulk Acoustic Resonator) device of thin film type and FBAR can be applicable to MMIC. The characteristic of FBAR device is variable according to the deposition conditions of piezoelectric thin film when preparation of thin film by sputtering method. In this study, we prepared ZnO thin film for FBAR using Facing Targets Sputtering apparatus which can be deposited fine Quality thin film because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. And crystalline and c-axis preferred orientation of ZnO thin film with deposition conditions was investigated by XRD.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제24회 학술발표회 초록집
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• pp.122-122
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• 2003

• Journal of information and communication convergence engineering
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• 제4권3호
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• pp.108-110
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• 2006

Film bulk acoustic resonators for radio frequency wireless applications are presented. Various simulations and modeling were carried out. The impedance of a five-layered FBAR showed almost the same trend of the wideband characteristics as that of an ideal FBAR, but the characteristics of the higher modes appear to be much more suppressed. In addition, the wideband impedance decreased with increasing device size. The resonance characteristics depend strongly on the physical dimensions.

• 한국세라믹학회지
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• 제43권1호
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• pp.42-47
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• 2006

In this paper, we prepared high-quality ZnO thin films for application of FBAR (Film Bulk Acoustic Resonator) by using pulse DC magnetron sputtering. To prevent the formation of low dielectric layers between metal and piezoelectric layer, Ru film of 30 nm thickness was used as a buffer layer. In addition we investigated the influence of annealing condition with various temperatures. As the annealing temperature increased, the crystalline orientation with the preference of (002) c-axis and resistance properties improved. The single resonator which was fabricated at $500^{\circ}C$ exhibited the resonance frequency and the return loss 0.99 GHz and 15 dB, respectively. This work demonstrates potential feasibility for the use of thin film Ru buffer layers and the optimization of annealing condition.