• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.11
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• pp.60-69
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• 1996

In this study, when the coherent detector has been developed and manufactured in the receiver of radar system, we have suggested and realized the 'Frequecny-Feedback correction (FFC)' that extracts its errors affecting the performance of radar, such as amplitude imbalances (k), phase imbalance ($\varphi$) between channels and offset votlages and corrects them to improve radar performances. Applying the FFC proposed, we analyzed sthe properties of the coherent detector and compared its perfomances after and before correction procdure. After the correction sequence, the amplitude imbalance was improved upt o 2dB and the phase imbalance over 9$^{\circ}$. The image rejection ratio (IRR), one of the figures of merit of radar system, was made better above 9 dB after correcting the coherent detector which possessed 23 dB before.

• School Mathematics
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• v.3 no.2
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• pp.447-473
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• 2001

Since the greater part of mathematical concepts have been developed in the direction of “from the concrete and realistic aspects to the abstract level”, children should be secured to learn mathematics genetically with various manipulative materials. The aim of this study is to instigate the active use of geoboards in mathematics classroom. To achieve this arm, we first embodied the several significances on the use of geoboards in mathematics instruction. And we then performed an instruction that children discover and justify the formula related to the area of trapezoid by exploring with geoboards, and analyzed the instructional episode to support our assertion about some secure merit accompanied by using geoboards. From this study, we obtained the conclusion that geoboard activity contains many significances such as children can explore congruence, symmetry, similarity, fundamental properties of figures, and pattern. Futhermore, geoboard activity enable children to transform a figure into other equivalently, develop spatial sense, have basic experiences for coordinate geometry, build a concrete model to explain abstract ideas, and foster the ability of problem solving and mathematical thinking.

• Journal of Energy Engineering
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• v.7 no.1
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• pp.57-64
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• 1998

A neutralized fabric filter of which major raw materials were polyester and stainless steel fibers was developed and its physiochemical properties and basic filter characteristics were investigated. Four finds of dusts generated in the typical domestic industry were used, which were coke dust from a steel manufacturing process, cement dust from a cement manufacturing process, flu ash from a fluidized-bed combustor, and incinerator ash from a waste plastics incinerator. The physicochemical properties of the neutralized fabric filter were analyzed in terms of changes in tensile strength and initial elastic modulus under $SO_2$ and $NO_2$ atmospheres, mean flow pore pressure, bubble point pore diameter, mean flow pore diameter, and pore size distribution. In addition, the pressure drop, dust penetration, and figure of merit for the fabric filter were investigated in a bench-scale filter testing unit. The pressure drop increased as the filtration velocity and dust loading increased, and its increasing shape depended on the type of dust. The dust penetration rapidly decreased as the dust loading increased irrespective of the type of dust. The figures of merit for the fabric filters increased in the early stage of filtration and then showed rapid decreases followed maintaining a constant level.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.69-76
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• 1997

P-type ($Bi_{0.5}Sb_{1.5}Te_3$) and n-type ($Bi_2Te_{2.4} Se_{0.6}$) thermoelectric thin film were deposited on glass and Teflon substrates by the flash evaporation technique. The changes in thermoelectric properties, such as Seebeck coefficient, electrical conductivity, carrier concentration, carrier mobility, thermal conductivity, and figure of merit, were investigated as a function of film thickness and annealing condition. Figures of merit of the thin films annealed at 473 K for 1 hour were improved to be $1.3{\times}10^{-3}K^{-1}$ for p-type and $0.3{\times}10^{-3}K^{-1}$ for n-type, and they were almost independent of film thickness. Temperature sensors were fabricated from the thin films having the above mentioned properties. And thermo-emf, sensitivity, and time constant of the sensors were measured to evaluate their characteristics for temperature sensors. Thin film sensors deposited on Teflon substrates showed better performance than those on glass substrates, and their sensitivity and time constant were 2.91 V/W and 28.2 sec respectively for the sensor of leg width 1 mm$\times$length 16 mm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.767-770
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• 2010

In this work, we investigated the static characteristics of 4H-SiC vertical metal-oxidesemiconductor field effect transistors (VMOSFETs) by adjusting the doping level of n-epilayer and the effect of a current spreading layer (CSL), which was inserted below the p-base region with highly doped n+ state ($5{\times}10^{17}cm^{-3}$). The structure of SiC VMOSFET was designed by using a 2-dimensional device simulator (ATLAS, Silvaco Inc.). By varying the n-epilayer doping concentration from $1{\times}10^{16}cm^{-3}$ to $1{\times}10^{17}cm^{-3}$, we investigated the static characteristics of SiC VMOSFETs such as blocking voltages and on-resistances. We found that CSL helps distribute the electron flow more uniformly, minimizing current crowding at the top of the drift region and reducing the drift layer resistance. For that reason, silicon carbide VMOSFET structures of highly intensified blocking voltages with good figures of merit can be achieved by adjusting CSL and doping level of n-epilayer.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.66-74
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• 2012

In this paper, the impact of segregation layer density ($N_{DSL}$) and length ($L_{DSL}$) on scalability and analog/RF performance of dopant-segregated Schottky barrier (DSSB) SOI MOSFET has been investigated in sub-30 nm regime. It has been found that, although by increasing the $N_{DSL}$ the increased off-state leakage, short-channel effects and the parasitic capacitances limits the scalability, the reduced Schottky barrier width at source-to-channel interface improves the analog/RF figures of merit of this device. Moreover, although by reducing the $L_{DSL}$ the increased voltage drop across the underlap length reduces the drive current, the increased effective channel length improves the scalability of this device. Further, the gain-bandwidth product in a common-source amplifier based on optimized DSSB SOI MOSFET has improved by ~40% over an amplifier based on raised source/drain ultrathin-body SOI MOSFET. Thus, optimizing $N_{DSL}$ and $L_{DSL}$ of DSSB SOI MOSFET makes it a suitable candidate for future nanoscale analog/RF circuits.

• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.419-439
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• 2018

Piezoelectric materials are essential parts of the electronics and electrical equipment used for consumer and industrial applications, such as ultrasonic piezoelectric transducers, sensors, actuators, transformers, and resonators. In this review, the development of piezoelectric materials and the figures of merit for various electromechanical applications are surveyed, focusing on piezoelectric crystals, i.e., the high-performance relaxor-$PbTiO_3$-based perovskite ferroelectric crystals and nonferroelectric high-temperature piezoelectric crystals. The uniqueness of these crystals is discussed with respect to different usages. Finally, the existing challenges and perspective for the piezoelectric crystals are discussed, with an emphasis on the temperature-dependent properties, from cryogenic temperatures up to the ultrahigh-temperature usage range.

• The Bulletin of The Korean Astronomical Society
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• v.40 no.1
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• pp.67.1-67.1
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• 2015

In the past two decades, diverse methods and computer codes for reconstruction of coronal magnetic fields have been developed. Some of them can reproduce a known analytic solution quite well when the magnetic field vector is fully specified by the known solution at the domain boundaries. In practical problems, however, we do not know the boundary conditions in the computational domain except the photospheric boundary, where vector magnetogram data are provided. We have developed a new, simple variational method employing vector potentials. We have tested the computational code based on this method for problems with known solutions and those with actual photospheric data. When solutions are fully given at all boundaries, the accuracy of our method is almost comparable to best performing methods in the market. When magnetic field vectors are only given at the photospheric boundary, our method excels other methods in "figures of merit" devised by Schrijver et al. (2006). Our method is expected to contribute to the real time monitoring of the sun required for future space weather prediction.

• Transactions on Electrical and Electronic Materials
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• v.1 no.2
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• pp.23-27
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• 2000

Indium in oxide(ITO) films have been deposited on PET and glass substrates by DC reactive magnetron sputtering without post-deposition thermal treatment, The high quality for microstructure, electrical and optical properties of the as-deposited ITO films on unheated substrates is dominated by the sputtering parameters, The influence of the working gas pressure, DC power and oxygen partial pressure has been systematically investigated, The lowest DC power, and oxygen partial pressure has been systematically investigated, The lowest resistivity of ITO films deposited on PET substrates was 6$\times$10$^{-4}$ $\Omega$cm. It has been obtained at a working pressure of 3 mTorr and DC power of 30 W. The sheet resistance and optical transmittance of these film were 22 $\Omega$/square and 84% respectively. The best values of figures of merit for the electrical and optical characteristics such as T/ $R_{sh}$ and $T^{10}$ / $R_{sh}$ are approximately 38.1 and 7.95($\times$10$^{-3}$ $\Omega$$^{-1}$ ), respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.350-350
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• 2010

Silicon carbide (SiC), one of the well known wide band gap semiconductors, shows high thermal conductivities, chemical inertness and breakdown energies. The design of normally-off 4H-SiC VJFETs [1] has been reported and 4H-SiC VJFETs with different lateral JFET channel opening dimensions have been studied [2]. In this work, 4H-SiC based VJFETs has been designed using the device simulator (ATLAS, Silvaco Data System, Inc). We varied the n-epi layer thickness (from $6\;{\mu}m$ to $10\;{\mu}m$) and the channel width (from $0.9\;{\mu}m$ to $1.2\;{\mu}m$), and investigated the static characteristics as blocking voltages, threshold voltages, on-resistances. We have shown that silicon carbide JFET structures of highly intensified blocking voltages with optimized figures of merit can thus be achieved by adjusting the epi layer thickness and channel width.