• Title/Summary/Keyword: Figure of merit (FOM)

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A technique for the reduction of pulse pile-up effect in pulse-shape discrimination of organic scintillation detectors

  • Nakhostin, M.
    • Nuclear Engineering and Technology
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    • v.52 no.2
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    • pp.360-365
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    • 2020
  • A technique for the reduction of pulse pile-up effect in digital pulse-shape discrimination (PSD) of neutrons and gamma-rays with organic scintillation detectors is presented. The technique is based on an electronic reduction of the effective decay-time constant of scintillation pulses while retaining the PSD information of the pulses. The experimental results obtained with a NE213 liquid scintillation detector in a mixed radiation field of neutrons and gamma-rays are presented, demonstrating a figure of merit (FOM) of 1.20 ± 0.05 with an energy threshold of 350 keVee (electron equivalent energy) when the effective length of the pulses is reduced to 50 ns.

Low Phase Noise LC-VCO with Active Source Degeneration

  • Nguyen, D.B. Yen;Ko, Young-Hun;Yun, Seok-Ju;Han, Seok-Kyun;Lee, Sang-Gug
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.3
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    • pp.207-212
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    • 2013
  • A new CMOS voltage-bias differential LC voltage-controlled oscillator (LC-VCO) with active source degeneration is proposed. The proposed degeneration technique preserves the quality factor of the LC-tank which leads to improvement in phase noise of VCO oscillators. The proposed VCO shows the high figure of merit (FOM) with large tuning range, low power, and small chip size compared to those of conventional voltage-bias differential LC-VCO. The proposed VCO implemented in 0.18-${\mu}m$ CMOS shows the phase noise of -118 dBc/Hz at 1 MHz offset oscillating at 5.03 GHz, tuning range of 12%, occupies 0.15 $mm^2$ of chip area while dissipating 1.44 mW from 0.8 V supply.

Characterization of BST Thin Films using MgO(100) Buffer Layer for Tunable Device

  • Lee Cheol-In;Kim Kyoung-Tae;Kim Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.2
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    • pp.67-71
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    • 2006
  • In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films fabricated on MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of those films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrate, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, dielectric loss and tunability of the BST thin films annealed at $700^{\circ}C$ deposited on the MgO(100)/Si substrate measured at 10 kHz were 515.9, 0.0082, and 54.3%, respectively.

Bandwidth Enhancement of Underwater Acoustic Transducer Using a Bandpass Matching Network (대역통과 정합회로를 이용한 수중음향변환기의 대역폭 확장)

  • Lee, Dae-Jae
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.52 no.6
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    • pp.702-708
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    • 2019
  • The range resolution of echo sounders can be improved by enhancing the transducer bandwidth. We designed a bandpass matching network for expanding the bandwidth of a transducer by scaling in both impedance and frequency after transforming a lowpass network into a bandpass configuration for a third-order Bessel filter. We measured the effect of the Bessel matching network for a 50 kHz sandwich type transducer on the transmitting voltage response (TVR), receiving sensitivity (SRT) and figure of merit (FOM), using a chirp echo sounder system. Both the simulation and experimental results indicated that the transducer with a bandpass matching network was capable of producing a symmetrical acoustic output over a wider bandwidth (8.25 kHz) than was the transducer without a matching network (3.75 kHz). By implementing the Bessel matching network, we achieved a 120% bandwidth enhancement.

A Quadrature VCO Exploiting Direct Back-Gate Second Harmonic Coupling

  • Oh, Nam-Jin
    • Journal of electromagnetic engineering and science
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    • v.8 no.3
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    • pp.134-137
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    • 2008
  • This paper proposes a novel quadrature VCO(QVCO) based on direct back-gate second harmonic coupling. The QVCO directly couples the current sources of the conventional LC VCOs through the back-gate instead of front-gate to generate quadrature signals. By the second harmonic injection locking, the two LC VCOs can generate quadrature signals without using on-chip transformer, or stability problem that is inherent in the direct front-gate second harmonic coupling. The proposed QVCO is implemented in $0.18{\mu}m$ CMOS technology operating at 2 GHz with 5.0 mA core current consumption from 1.8 V power supply. The measured phase noise of the proposed QVCO is - 63 dBc/Hz at 10 kHz offset, -95 dBc/Hz at 100 kHz offset, and -116 dBc/Hz at 1 MHz offset from the 2 GHz output frequency, respectively. The calculated figure of merit(FOM) is about -174 dBc/Hz at 1 MHz offset. The measured image band rejection is 46 dB which corresponds to the phase error of $0.6^{\circ}$.

Dielectric properties of (100)-oriented $Ba_{0.6}Sr_{0.4}TiO_3$ Thin Films grown on MgO (100) thin films for phase-shifters (Phase-shifters 응용을 위한 MgO 박막위에 성장된 BST(100) 박막의 유전적 특성)

  • Lee, Byeong-Ki;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.663-666
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    • 2004
  • In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films film fabricatedon MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrates, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constants, dielectric loss and tunability of the BST thin films annealed at 700 C deposited on the MgO(100)/Si substrates measured at 10 kHz were 515.9, 0.0082, and 54.3 %, respectively.

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Digital Error Correction for a 10-Bit Straightforward SAR ADC

  • Rikan, Behnam Samadpoor;Abbasizadeh, Hamed;Do, Sung-Han;Lee, Dong-Soo;Lee, Kang-Yoon
    • IEIE Transactions on Smart Processing and Computing
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    • v.4 no.1
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    • pp.51-58
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    • 2015
  • This paper proposes a 10-b SAR ADC. To increase the conversion speed and reduce the power consumption and area, redundant cycles were implemented digitally in a capacitor DAC. The capacitor DAC algorithm was straightforward switching, which included digital error correction steps. A prototype ADC was implemented in CMOS $0.18-{\mu}m$ technology. This structure consumed $140{\mu}W$ and achieved 59.4-dB SNDR at 1.25MS/s under a 1.8-V supply. The figure of merit (FOM) was 140fJ/conversion-step.

Thermodynamic Analysis of Power Generation Cycle Utilizing LNG Cold Energy (LNG 냉열을 이용하는 동력사이클 열역학 해석)

  • 최권일;장홍일
    • Progress in Superconductivity and Cryogenics
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    • v.1 no.1
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    • pp.48-55
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    • 1999
  • thermodynamic cycle analysis has been performed for the power generation systems to utilize the cold energy of liquefied natural gas (LNG). The power cycle used the air or water at room temperature as a heat source and the LNG at cryogenic temperature as a heat sink. Among manypossible configurations of the cycle. the open Rankine cycle. and the closed Brayton cycle, and the closed Rankine cycle are selected for the basic analysis because of their practical importance. The power output per unit mass of LNG has been analytically calculated for various design parameters such as the pressure ratio. the mass flow rate. the adiabatic efficiency. the heat exchanger effectiveness. or the working fluid. The optimal conditions for the parameters are presented to maximize the power output and the design considerations are discussed. It is concluded that the open Rankine cycle is the most recormmendable both in thermodynamic efficency and in practice.

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Denoising of Digital Mammography Images Using Wavelet Transform (웨이블릿을 이용한 디지털유방영상의 노이즈 제거)

  • Choi, Seokyoon;Ko, Seongjin;Kang, Sesik
    • Journal of the Korean Society of Radiology
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    • v.7 no.3
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    • pp.181-189
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    • 2013
  • The optimum exposure parameters are found when examined using the automatic mode in FFDM. improve the image quality by applying denoising algorithm and propose methods to reduce AGD(Average Grandular Dose) a patient can receive. For the experiment, Nuclear Associates Model 18-222 phantom was the used, and the entrance dose and AGD were measured. And then, Signal, Noise, SNR and FOM(Figure of Merit) were measured, compared and analyzed image denoising before and after. As the experiment result, first, SNR was the highest at Mo/Mo 23kVp and W/Rh 35kvp was the lowest for the average glandular dose. It showed to use 28kVp of W/Rh to be the best through the result of FOM. SNR was the highest at Mo/Mo 23kVp(image denoising), and it showed to W/Rh and 28kVp to be the best in the FOM result which AGD was considered at the same time. By the image denoising, it is possible to reduce noise while maintain important information in the image.

Influence of ZnO Thickness on the Optical and Electrical Properties of GZO/ZnO Bi-layered Films

  • Kim, Sun-Kyung;Kim, So-Young;Kim, Seung-Hong;Jeon, Jae-Hyun;Gong, Tae-Kyung;Kim, Daeil;Yoon, Dae Young;Choi, Dong Yong
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.4
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    • pp.198-200
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    • 2014
  • 100 nm thick Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on polyethylene terephthalate (PET) and ZnO coated PET substrate and then the effect of the ZnO thickness on the optical and electrical properties of the GZO films was investigated. GZO single layer films had an optical transmittance of 83.7% in the visible wavelength region and a sheet resistance of $2.41{\Omega}/{\square}$, while the optical and electrical properties of the GZO/ZnO bi-layered films were influenced by the thickness of the ZnO buffer layer. GZO films with a 20 nm thick ZnO buffer layer showed a lower sheet resistance of $1.45{\Omega}/{\square}$ and an optical transmittance of 85.9%. As the thickness of ZnO buffer layer in GZO/ZnO bi-layered films increased, both the conductivity and optical transmittance in the visible wavelength region were increased. Based on the figure of merit (FOM), it can be concluded that the ZnO buffer layer effectively increases the optical and electrical performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.