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http://dx.doi.org/10.4313/TEEM.2006.7.2.067

Characterization of BST Thin Films using MgO(100) Buffer Layer for Tunable Device  

Lee Cheol-In (Department of Electrical Engineering, Ansan College of Technology)
Kim Kyoung-Tae (School of Electrical and Electronic Engineering, Chungang University)
Kim Chang-Il (School of Electrical and Electronic Engineering, Chungang University)
Publication Information
Transactions on Electrical and Electronic Materials / v.7, no.2, 2006 , pp. 67-71 More about this Journal
Abstract
In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films fabricated on MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of those films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrate, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, dielectric loss and tunability of the BST thin films annealed at $700^{\circ}C$ deposited on the MgO(100)/Si substrate measured at 10 kHz were 515.9, 0.0082, and 54.3%, respectively.
Keywords
BST; Sol-gel; Tunability; Dielectric properties; MgO;
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