• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.242-248
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• 2008

The structural, optical and electrical properties of ZnO films doped with 1.5 at% of 3A materials(B, Al, Ga, In) were studied by sol-gel process. The films were found to be c-axis (002) oriented hexagonal structure on glass substrate, when post heated at 500 $^{\circ}C$. The surface of the films showed a uniform and nano size microstructure and the crystalline size of doped films decreased. The lattice constants of ZnO:B/Al/Ga increased than that of ZnO, while ZnO:In decreased. All the films were highly transparent(above 90 %) in the visible region. The energy gaps of ZnO:B/Al/Ga were increased a little, but that of ZnO:In was not changed. The resistivities of ZnO:Al/Ga/In were less than 0.1 $\Omega$cm. All the films showed a semiconductor properties in the light or temperature, however ZnO:In was less sensitive to it. A figure of merit of ZnO:In had the highest value of 0.025 $\Omega^{-1}$ in all samples.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.217-220
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• 2017

We deposited transparent conductive ZTO/Ag/ZTO trilayer thin films on glass substrates through magnetron sputtering, and then conducted intense electron beam irradiation on their surfaces to investigate the effects of electron irradiation on the structural, optical, and electrical properties of these films. After deposition, we electron irradiated the ZTO/Ag/ZTO films for 10 min at electron energies of 300, 500, and 700 eV. The films that were electron irradiated at 700 eV showed a higher optical transmittance (84.2%) in the visible wavelength region and a lower resistivity ($7.2{\times}10^{-5}{\Omega}cm$) compared with the other films. The figure of merit revealed that the ZTO/Ag/ZTO films that were electron irradiated at 700 eV had a higher optical and electrical performance than the other films prepared in this study.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.394-397
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• 2012

In this work, we studied the influence of the dopant elements concentration on the properties of SnO2 thin films deposited by pulsed laser deposition. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall effect measurement and UV-Vis studies were performed to characterize the deposited films. XRD results showed that the films had polycrystalline nature with tetragonal rutile structure. FE-SEM micrographs revealed that the as deposited films composed of dense microstructures with uniform grain size distribution. All the films show n-type conduction and the best transparent conductive oxide (TCO) performance was obtained on 6 wt% Sb2O5 doped SnO2 film prepared at pO2 of 60mtorr and Ts of 500 ℃. Its resitivity, optical transmittance, figure of merit are 7.8 × 10-4 Ω cm, 85% and 1.2 × 10-2 Ω-1, respectively.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.121-124
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• 2016

ZnSnO₃ (ZTO)/Ag/ ZnSnO₃ (ZTO) trilayer films were prepared on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering. The electrical resistivity and optical transmittance of the films were investigated as a function of the Ag interlayer thickness. ZTO films with a 15 nm thick Ag interlayer show the highest average visible transmittance (83.2%) in the visible range. In this study, the highest figure of merit (2.1×10⁻² Ω cm) is obtained with the ZTO 50 nm/Ag 15 nm/ZTO 50 nm films. The enhanced optical and electrical properties of ZTO films with a 15 nm thick Ag interlayer are attributed to the crystallization of the Ag interlayer, as supported by the distinct XRD pattern of the Ag (111) peaks. From the observed results, higher optical and electrical performance of the ZTO film with a 15 nm thick Ag interlayer seems to make a promising alternative to conventional transparent conductive ITO films.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.9 no.3
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• pp.284-291
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• 1997

A hydrogen liquefaction equipment by direct cooling has been designed and built at KIST. Cool-down characteristics and liquefaction performance of the equipment have been investigated. The hydrogen liquefaction equipment consists of a GM refrigerator, a liquefaction velssel, a radiation shield and a cryostat. It is found that the hydrogen starts to be liquefied in the liquefaction vessel after 40~50 minutes of cool-down from the gas state of 270K. The effect of natural convection phenomena of charged gas in liquefaction vessel on the cool-down characteristics is evaluated by comparing with those in vacuum of liquefaction vessel. It is seen that the cool-down time of a liquefaction vessel is substantially increased in vacuum environment of liquefaction vessel. The experiments have been performed for 1~5 atm of hydrogen pressure to investigate the influence of hydrogen pressure on the liquefaction rate and figure of merit(FOM). It is found that both liquefaction rate and FOM are increased as the charged hydrogen pressure is increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.423-426
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• 2001

Recently we have reported that the meander-patterned amorphous FeCoSiB films exhibit large change in their high frequency impedance by applying a strain, suggesting that the films are very attractive for making of a highly sensitive strain sensor elements. In this study, the effect of anisotropy on a change in the impedance of sputtered amorphous film patterns was investigated in the frequency range from 1MHz to 1GHz. As a function of applied strains, the high frequency impedance was extremely changed in the case of film patterns with transverse anisotropy due to excellent magnetomechanical coupling properties. As a summary, the maximum figure of merit f has measured about 2600 in the case of transverse anisotropy, and about 500 in the case of longitudinal anisotropy at 500 MHz. These values of F are approximately more than 1000 times higher than that of a conventional metal strain gauge (F 2) and more than 10 times higher than that of a semiconductor gauge (F 200).

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.53 no.8
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• pp.477-487
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• 2004

Helical magneto-cumulative generators(MCGs) are devices which convert explosive energy into electromagnetic energy. The electromagnetic energy supplied from an external circuit is amplified by an explosively driven metal conductor mounted at the center of a helical coil compressing magnetic flux between the conductor and the coil. To optimize the coil design, output properties of small-size helical MCGs were measured while varying design parameters; the number of coil sections, length of the sections, pitch in the sections, and type of copper wire. Dimensions of the coil were kept constant, 50 mm in diameter and 200 mm in length. The coil was fabricated by using enamel-coated copper wire of 1 mm in diameter. The highest energy amplification ratio and figure of merit were 52.5 and 0.81, respectively. from an helical MCG with initial inductance of 63.7 $\mu$H at initial energy of 0.152 kJ Based on the experimental and calculated results, empirical formulas capable of optimizing coil designs were derived. By using these formulas, pitch in each coil section can be obtained at an arbitrary inductive load for high energy amplification ratio and figure of merit.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.183-188
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• 2016

This paper presents the design and characterization of wide band ohmic microswitch with an actuation voltage as low as 20~25 V, and a restoring force of 14.1 μN. The design of the proposed switch is primarily composed of an electrostatic actuator, bridge membrane, cantilever (beam) and coplanar waveguide, suspended over the substrate. The analysis shows an insertion loss of −0.002 dB at 1GHz and remains as low as −0.35 dB, even at 100 GHz. The isolation loss of the switch is sustained at −21.09 dB at 100GHz, with a peak value of −99.58 dB at 1 GHz and up-state capacitance of 4 fF. To our knowledge, this is the first demonstration of a series contact switch, which works over a wide bandwidth (DC-100 GHz) and with such a high and sustained isolation, even at high frequencies and with an excellent figure of merit (f_c=1/2.pi.Ron.Cu= 39.7 THz).

• Journal of the Korean Society for Heat Treatment
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• v.28 no.6
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• pp.296-299
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• 2015

$In_2O_3/Ti$ bi-layered films were deposited on glass substrate at room temperature with radio frequency (RF) and direct current (DC) magnetron sputtering to consider the effect of Ti buffer layer on the electrical and optical properties. In a comparison of figure of merit, $In_2O_3$ 90 nm/Ti 10 nm thin films show the higher opto-electrical performance of $3.0{\times}10^{-4}{\Omega}^{-1}$ than that of the $In_2O_3$ single layer films ($2.6{\times}10^{-4}{\Omega}^{-1}$). From the observed results, it is supposed that the $In_2O_3\;90nm/TiO_2$ 10 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.

• International Journal of Air-Conditioning and Refrigeration
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• v.9 no.3
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• pp.27-35
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• 2001

Heat transfer characteristics of a heat exchanged for low temperature waste heat recovery using oscillating capillary tube heat pipe (OCHP) were evaluated against the charging ratio variation of working fluid and various working fluids. R-l42b, R-22 and R-290 were used as working a 2.6mm in outside diameter, 1.44mm in inside diameter with 101m length and 140 turns. Charging ratio of working fluid was 40% and 50%. water was used as secondary fluid. Inlet temperature and mass velocity for each secondary fluid were 297 K, 280 K and 9~27 $4kg/m^2s$, respectively. From experimental results, it was found that heat transfer performance of R-22 was higher than those of R-142b and R-290 and it was proportional to Figure of Merit for thermosyphon. As a result, it was thought that R-22 was the most reasonable working fluid of waste heat recovery for low temperature waste heat recovery.