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http://dx.doi.org/10.4313/JKEM.2008.21.3.242

Effects of Different Dopants(B, AI, Ga, In) on the Properties of Transparent conducting ZnO Thin Films  

No, Young-Woo (부경대학교 전자공학과)
Cho, Jong-Rae (부경대학교 전자공학과)
Son, Se-Mo (부경대학교 인쇄공학과)
Chung, Su-Tae (부경대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.3, 2008 , pp. 242-248 More about this Journal
Abstract
The structural, optical and electrical properties of ZnO films doped with 1.5 at% of 3A materials(B, Al, Ga, In) were studied by sol-gel process. The films were found to be c-axis (002) oriented hexagonal structure on glass substrate, when post heated at 500 $^{\circ}C$. The surface of the films showed a uniform and nano size microstructure and the crystalline size of doped films decreased. The lattice constants of ZnO:B/Al/Ga increased than that of ZnO, while ZnO:In decreased. All the films were highly transparent(above 90 %) in the visible region. The energy gaps of ZnO:B/Al/Ga were increased a little, but that of ZnO:In was not changed. The resistivities of ZnO:Al/Ga/In were less than 0.1 $\Omega$cm. All the films showed a semiconductor properties in the light or temperature, however ZnO:In was less sensitive to it. A figure of merit of ZnO:In had the highest value of 0.025 $\Omega^{-1}$ in all samples.
Keywords
ZnO; Thin film; Transparent; Figure of merit;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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