• IEIE Transactions on Smart Processing and Computing
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• v.4 no.3
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• pp.189-193
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• 2015

This paper provides the design techniques of a successive approximation register (SAR) type 12b analog-to-digital converter (ADC) for distributed maximum power point tracking (DMPPT) control in a photovoltaic system. Both a top-plate sampling technique and a $V_{CM}$-based switching technique are applied to the 12b capacitor digital-to-analog converter (CDAC). With these techniques, we can implement a 12b SAR ADC with a 10b capacitor array digital-to-analog converter (DAC). To enhance the accuracy of the ADC, a single-to-differential converted DAC is exploited with the dual sampling technique during top-plate sampling. Simulation results show that the proposed ADC can achieve a signal-to-noise plus distortion ratio (SNDR) of 70.8dB, a spurious free dynamic range (SFDR) of 83.3dB and an effective number of bits (ENOB) of 11.5b with bipolar CMOS LDMOD (BCDMOS) $0.35{\mu}m$ technology. Total power consumption is 115uW under a supply voltage of 3.3V at a sampling frequency of 1.25MHz. And the figure of merit (FoM) is 32.68fJ/conversion-step.

• IEIE Transactions on Smart Processing and Computing
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• v.4 no.3
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• pp.183-188
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• 2015

A 10-bit 10MS/s low power consumption successive approximation register (SAR) analog-to-digital converter (ADC) using a straightforward capacitive digital-to-analog converter (DAC) is presented in this paper. In the proposed capacitive DAC, switching is always straightforward, and its value is half of the peak-to-peak voltage in each step. Also the most significant bit (MSB) is decided without any switching power consumption. The application of the straightforward switching causes lower power consumption in the structure. The input is sampled at the bottom plate of the capacitor digital-to-analog converter (CDAC) as it provides better linearity and a higher effective number of bits. The comparator applies adaptive power control, which reduces the overall power consumption. The differential prototype SAR ADC was implemented with $0.18{\mu}m$ complementary metal-oxide semiconductor (CMOS) technology and achieves an effective number of bits (ENOB) of 9.49 at a sampling frequency of 10MS/s. The structure consumes 0.522mW from a 1.8V supply. Signal to noise-plus-distortion ratio (SNDR) and spurious free dynamic range (SFDR) are 59.5 dB and 67.1 dB and the figure of merit (FOM) is 95 fJ/conversion-step.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.852-858
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/$SiO_2$/Sisubstrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$ thin film showed the lowest value of 5.13$\times 10^{-7} A/{cm}^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}Tio_{3}$ thin films were 333, 0.0095, and 31.1%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.623-626
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• 2004

[ $Ba_{0.6}Sr_{0.4}TiO_3$ ] (BST) dielectric thin films doped by Cr were prepared using an alkoxide-based sol-gel method on the Pt/Ti/SiO2/Si substrate. Atomic force microscopy and x-ray diffraction analysis showed that increasing the Cr doping ratio causes increased grain size while the surface remains smooth and crack-free. It was also found that compared with undoped films the increase of Cr content in BST improves the dielectric constant and the leakage-current characteristics. The figure of merit reached the maximum value of 72.3 at the 5 mol % of Cr doping. This composition showed the dielectric constant of 426, the loss factor of 0.0065, tenability of 47.7%, and leakage-current density (at the electric field of 100 kV/cm) of $5.31{\times}10^{-8}A/cm^2$. The results show that the Cr-doped BST thin films are prospective candidates for applications in tunable devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.565-568
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/SiO2/Si substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of 5.13 10-7 at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $BBa_{0.6}Sr_{0.4}TiO_3$ thin films were 333,0.0095, and 31.1%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.18-21
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a $Pt/Ti/SiO_2/Si$ substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of $5.13{\times}10^{-7}\;A/cm^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films were 333, 0.0095, and 31.1%, respectively.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.957-958
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• 2006

Fe doped skutterudite $CoSb_3$ with a nominal composition of $Fe_xCo_{1-x}Sb_{12}(0{\leq}x{\leq}2.5)$ have been synthesized by mechanical alloying (MA) of elemental powders, followed by vacuum hot pressing. Phase transformations during mechanical alloying and vacuum hot pressing were systematically investigated using XRD. Single phase skutterudite was successfully produced by vacuum hot pressing using as-milled powders without subsequent annealing. However, second phase of $FeSb_2$ was found to exist in case of $x\geq2$, suggesting the solubility limit of Fe with Co in this system. Thermoelectric properties as functions of temperature and Fe contents were evaluated for the hot pressed specimens. Fe doping up to x=1.5 with Co in $Fe_xCo_{4-x}Sb_{12}$ appeared to increase thermoelectric figure of merit (ZT) and the maximum ZT was found to be 0.78 at 525K in this study.

• Journal of Powder Materials
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• v.25 no.5
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• pp.384-389
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• 2018

Nanoparticles of PbTe are prepared via chemical reaction of the equimolar aqueous solutions of $Pb(CH_3COO)_2$ and Te at $120^{\circ}C$. The size of the obtained particles is 100 nm after calcination in a hydrogen atmosphere. Dense specimens for the thermoelectric characterization are produced by spark plasma sintering of prepared powders at $400^{\circ}C$ to $500^{\circ}C$ under 80 MPa for 5 min. The relative densities of the prepared specimens reach approximately 97% and are identified as cubic based on X-ray diffraction analyses. The thermoelectric properties are evaluated between $100^{\circ}C$ and $300^{\circ}C$ via electrical conductivity, Seebeck coefficient, and thermal conductivity. Compared with PbTe ingot, the reduction of the thermal conductivities by more than 30% is verified via phonon scattering at the grain boundaries, which thus contributes to the increase in the figure of merit.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.2
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• pp.108-113
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• 2013

This paper describes a low power asynchronous successive approximation register (SAR) type 12b analog-to-digital converter (ADC) for biomedical applications in a 0.35 ${\mu}m$ CMOS technology. The digital-to-analog converter (DAC) uses a capacitive split-arrays consisting of 6-b main array, an attenuation capacitor C and a 5-b sub array for low power consumption and small die area. Moreover, splitting the MSB capacitor into sub-capacitors and an asynchronous SAR reduce power consumption. The measurement results show that the proposed ADC achieved the SNDR of 68.32 dB, the SFDR of 79 dB, and the ENOB (effective number of bits) of 11.05 bits. The measured INL and DNL were 1.9LSB and 1.5LSB, respectively. The power consumption including all the digital circuits is 6.7 ${\mu}W$ at the sampling frequency of 100 KHz under 3.3 V supply voltage and the FoM (figure of merit) is 49 fJ/conversion-step.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.4
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• pp.335-341
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• 2016

In this paper, we propose the method of controling the turns of a receiving coil for the matching directly to the receiver input impedance(typically $50{\Omega}$) with a maximum wireless power transfer(WPT) efficiency. Based on the presented the expression of the optimum load depending on a system figure of merit, number of the turns of a receiving coil, and proximity effect between conducting lines, the theoretical efficiencies have been compared with the measured ones with a good agreement. The results of this work may be used to realize a allowable maximum efficiency with a simple and low-profile 2-coil WPT system not requiring a separate feeding loop.