• Journal of Magnetics
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• v.11 no.1
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• pp.16-19
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• 2006

$2-\mu{m}$ thick GaN epilayer was prepared, and 80 KeV $Co^{-}$ ions with a dose of $3X10^{16}\;cm^{-2}$ were implanted into GaN at $350^{\circ}C$. The implanted samples were post annealed at $700^{\circ}C$. We have investigated the magnetic and structural properties of Co ion-implanted GaN by various measurements. HRXRD results did not show any peaks associated with second phase formation and only the diffraction from the GaN layer and substrate structure were observed. SIMS profiles of Co implanted into GaN before and after annealing at $700^{\circ}C$ have shown a projected range of $\sim390\AA$ with 7.4% concentration and that there is little movement in Co. AFM measurement shows the form of surface craters for $700^{\circ}C$-annealed samples. The magnetization curve and temperature dependence of magnetization taken in zero-field-cooling (ZFC) and field-cooling (FC) conditions showed the features of superparamagnetic system in film. XPS measurement showed the metallic Co 2p core levels spectra for $700^{\circ}C$-annealed samples. From this, it could be explained that magnetic property of our films originated from Co magnetic clusters.

• The Korean Journal of Rheology
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• v.11 no.2
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• pp.128-134
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• 1999

Rheological characterization was examined for two different types of magenetic particle (rod-like $\gamma$-$Fe_{2}O_{3}$, $CrO_2$ )suspension in this study. The measured suspension viscosity (viscosity vs. concentration or shear rate) is used to obtain the dependence of viscous energy dissipation on the microstructural states of magnetic particle dispersions as well as the microstructural shape effects which are related to magnetic particle orientation. The empirical formulas from mean field theory and the Mooney equation are used to relate suspension viscosity to particle concentration. Intrinsic viscosities of these two different types of rod-like magnetic particle suspensions are found to exceed the prediction of hydrodynamic theory for dilute suspensions and support the existence of flocs containing significant amounts of immobilized suspending medium due to native attraction forces among particles in the microstructures.

• Journal of Advanced Navigation Technology
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• v.21 no.4
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• pp.325-331
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• 2017

As a GPS stability problem arises, MLAT system is spotlighted as an alternative technology of ADS-B. MLAT system has a high position accuracy as much as ADS-B. Also, MLAT receives the mode A,C,S, and 1090ES(ADS-B) signals from the mounted aircraft transponder. MLAT receives signals from several receiver units and calculates aircraft positions. MLAT has ADS-B level positioning accurarcy using GPS and can calculate the position information with objects independently. According to global environment changes, Local area multiltilateration(LAM) surveillance system is under development for moving vehicles and aircraft detection in airport. These are still under testing in Tae-an Airfield. In the paper, we analyzed the performance by comparing the calculated position data from MLAT to RTK. In order to confirm the position accuracy of MLAT and the deviation of position data between fixed target and moving target on the ground during the field test in Tae-an Airfield.

• Journal of The Korean Astronomical Society
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• v.36 no.spc1
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• pp.93-99
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• 2003

Various attempts have been made to explain the: pronounced seasonal and universal time (UT) variations of geomagnetic indices. As one of such attempts, we analyze the hourly-averaged auroral electroject indices obtained during the past 20 years. The AU and AL indices maximize during summer and equinoctial months, respectively. By normalizing the contribution of the solar conductivity enhancement to the AU index, or to the eastward electrojet, it is found that the AU also follows the same semiannual variation pattern of the AL index, suggesting that the electric field is the main modulator of the semiannual magnetic variation. The fact that the variation pattern of the yearly-mean AU index follows the mirror image of the AL index provides another indication that the electric field is the main modulator of magnetic disturbance. The pronounced UT variations of the auroral electrojet indices are also noted. To determine the magnetic activity dependence, the probability of recording a given activity level of AU and AL during each UT is examined. The UT variation of the AL index, thus obtained, shows a maximum at around 1200-1800 UT and a minimum around 0000-0800 UT particularly during winter. It is closely associated with the rotation of the geomagnetic pole around the rotational axis, which results in the change of the solar-originated ionospheric conductivity distribution over the polar region. On the other hand the UT variation is prominent during disturbed periods, indicating that the latitudinal mismatch between the AE stations and the auroral electrojet belt is responsible for it. Although not as prominent as the AL index, the probability distribution of the AU also shows two UT peaks. We confirm that the Dst index shows more prominent seasonal variation than the AE indices. However, the UT variation of the Dst index is only noticeable during the main phase of a magnetic storm. It is a combined result of the uneven distribution of the Dst stations and frequent developments of the partial ring current and substorm wedge current preferentially during the main phase.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.106-112
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• 2000

A FET-type reference electrode(REFET) is an effective method to eliminate typical problems with ISFET(ion sensitive field-effect transistor) such as drift, temperature, light-dependence and miniaturization of reference electrode. However, it is difficult to make the highly reliable REFET with excellent long-term stability and reproducibility. In this paper, an ion-blocking membrane was applied to the REFET for the PET-type electrolyte sensors(pH, pNa-ISFET). The fabricated REFET indicated the stable sensitivity (55.4 mV/pH, 53.5 mV/decade) and good linearity in the pH and pNa measurement. In the measurement, ISFET/Pt/REFET configuration showed excellent stability and reproducibility.

• Journal of Sensor Science and Technology
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• v.27 no.3
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• pp.204-208
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• 2018

Monolayer graphene grown via chemical vapor deposition (CVD) is recognized as a promising material for sensor applications owing to its extremely large surface-to-volume ratio and outstanding electrical properties, as well as the fact that it can be easily transferred onto arbitrary substrates on a large-scale. However, the Dirac voltage of CVD-graphene devices fabricated with transferred graphene layers typically exhibit positive shifts arising from transfer and photolithography residues on the graphene surface. Furthermore, the Dirac voltage is dependent on the channel lengths because of the effect of metal-graphene contacts. Thus, large and nonuniform Dirac voltage of the transferred graphene is a critical issue in the fabrication of graphene-based sensor devices. In this work, we propose a fabrication process for graphene field-effect transistors with Dirac voltages close to zero. A vacuum annealing process at $300^{\circ}C$ was performed to eliminate the positive shift and channel-length-dependence of the Dirac voltage. In addition, the annealing process improved the carrier mobility of electrons and holes significantly by removing the residues on the graphene layer and reducing the effect of metal-graphene contacts. Uniform and close to zero Dirac voltage is crucial for the uniformity and low-power/voltage operation for sensor applications. Thus, the current study is expected to contribute significantly to the development of graphene-based practical sensor devices.

• The Journal of the Korea Contents Association
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• v.14 no.6
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• pp.73-83
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• 2014

This paper is to analyse how Industree Crafts, social enterprise in the field of crafts, could generate profit and create a sustainable growth for the last 30 years out of dependence on government grants in India. Success factors was drawn from the findings as follows. First, bringing stakeholder value: it preferred social mission as a goal for generating the value of stakeholders respectively and shared value mutually. Second, building distinctive internal business processes: it adapted unique business model and 4P strategy into its internal organization system and introduced the way of management to support the independence of self-help groups aimed at creating greater added value. Third, promoting learning and innovation culture: it challenged with the help of new design strategies continuously, was unafraid of change, and promoted learning culture to turn trial and error into the organization learning. Finally fourth, securing right finances and resources: it obtained proper finances and resources such as trying joint-sale, attracting investment from a private company, and acquiring enough skilled artisans at every scaling up.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.123-129
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• 1996

LDD structure is widely accepted in fabricating short channel MOSFETs due to reduced short channel effect originated form lower drain edge electric field. However, modeling of the LDD device is troublesome because the analysis methods of LDD region known are either too complicated or inaccurate. To solve the problem, this paper presents a nonlinear resistance model for the LDD region based on teh fact that the electron mobility changes with positive gate bias because accumulation layer of electrons is formed at the surface of the LDD region. To prove the usefulness of the model, single source/drain and LDD nMOSFETs were fabricated with 0.35$\mu$m CMOS technolgoy. For the fabricated devices we have measured I$_{ds}$-V$_{gs}$ characteristics and compare them to the modeling resutls. First of all, we calculated channel and LDD region mobility from I$_{ds}$-V$_{gs}$ characteristics of 1050$\AA$ sidewall, 5$\mu$m channel length LDD NMOSFET. Then we MOSFET and found good agreement with experiments. Next, we use calculated channel and LDD region mobility to model I$_{ds}$-V$_{gs}$ characteristics of LDD mMOSFET with 1400 and 1750$\AA$ sidewall and 5$\mu$m channel length and obtained good agreement with experiment. The single source/drain device characteristic modeling results indicates that the cahnnel mobility obtained form our model in LDD device is accurate. In the meantime, we found that the LDD region mobility is governed by phonon and surface roughness scattering from electric field dependence of the mobility. The proposed model is useful in device and circuit simulation because it can model LDD device successfully even though it is mathematically simple.

• Journal of the Korean Magnetics Society
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• v.7 no.3
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• pp.146-151
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• 1997

Buffer (t $\AA$)/ CoFe(35$\AA$)/Cu (50$\AA$)/Co (35$\AA$) sandwiches prepared by dc magnetron sputtering on Corning glass substrates using the $Co_{90}Fe_{10}$ and Co layers with different coercivities. Dependence of magnetoresistance on the type and thickness of buffer layers, and on the thickness of Cu and the magnetic layers in buffer/ CoFe/Cu /Co sandwiches were investigated. Magnetoresistance ratio and saturation field $H_s$ increased as thickness of the buffer layer becomes thicker, then decreased smoothly after a maximum value. An improved filed sensitivity was realized with the $Ni_{81}Fe_{19}$ buffer layer.

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.272-276
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• 1994

A new Galvanomagnetic electrorootive force effect of $Ni_{53}-Fe_{47}$ thin films is studied. The dependence of this effect on $\theta$, angle between the current and the magnetic field, is found to be the form of sin $2\theta$, in contrast with that of the magneto resistance effect cas $2\theta$ and that of the Hall effect sin $\theta$. Property of this effect is that lthe rate of the voltage variation depending on the magnetic field is extremely large as compared with the magnetiresistance effect. It is theoretically confirmed that this effect is well understood on the basis of the two carrier types model.