• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권7호
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• pp.521-524
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• 1999

Nb silicide was formed on the Si micro-tip arrays in order to improve field emission properties of Si-tip field emitter array. After silicidization of the tips, the etch-back process, by which gate insulator, gate electrode and photoresist were deposited sequentially and gate holes were defined by removing gradually the photoresist by $O_2$ plasma from the surface, was applied. Si nitride film was used as a protective layer in order to prevent oxygen from diffusion into Nb silicide layer and it was identified that the NbSi2 was formed through annealing in $N_2$ ambient at $1100^{\circ}C$ for 1 hour. By the Nb silicide coating on Si tips, the turn-on voltage was decreased from 52.1 V to 32.3 V and average current fluctuation for 1 hour was also reduced from 5% to 2%. Also, the fabricated Nb silicide-coated Si tip FEA emitted electrons toward the phosphor and light emission was obtained at the gate voltage of 40~50 V.

• 한국세라믹학회지
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• 제47권6호
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• pp.623-626
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• 2010

We synthesized ZnO nanowires patterned on Si substrate and investigated the field emission properties of the nanowires. Firstly, Au catalyst layers were fabricated on Si substrate by photo-lithography and lift-off process. The diameter of Au pattern was $50\;{\mu}m$ and the pattern was arrayed as $4{\times}4$. ZnO nanowires were grown on the Au catalyst pattern by the aid of Au liquid phase. The orientation of the ZnO nanowires was vertical on the whole. Sufficient brightness was obtained when the electric field was $5.4\;V/{\mu}m$ and the emission current was $5\;mA/cm^2$. The threshold electric field was $5.4\;V/{\mu}m$ in the $4{\times}4$ array of ZnO nanowires, which is quite lower than that of the nanowires grown on the flat Si substrate. The lower threshold electric field of the patterned ZnO nanowires could be attributed to their vertical orientation of the ZnO nanowires.

• Journal of Magnetics
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• 제17권1호
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• pp.9-12
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• 2012

Attempts to dope carbon nanotube (CNT) with impurities in order to control the electronic properties of the CNT is a natural course of action. Boron is known to improve both the structural and electronic properties. In this report, we study the field emission properties of Boron-doped double-walled CNT (DWCNT). Boron-doped DWCNT films were fabricated by catalytic decomposition of tetrahydrofuran and triisopropyl borate over a Fe-Mo/MgO catalyst at $900^{\circ}C$. We measured the field emission current by varying the doping amount of Boron from 0.8 to 1.8 wt%. As the amount of doped boron in the DWCNT increases, the turn-on-field of the DWCNT decreases drastically from 6 V/${\mu}m$ to 2 V/${\mu}m$. The current density of undoped CNT is 0.6 mA/$cm^2$ at 9 V, but a doped-DWCNT sample with 1.8 wt% achieved the same current density only at only 3.8 V. This shows that boron doped DWCNTs are potentially useful in low voltage operative field emitting device such as large area flat panel displays.

• 한국재료학회지
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• 제20권4호
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• pp.199-203
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• 2010

Hybridization of semiconductor materials with carbon nanotubes (CNTs) is a recent field of interest in which new nanodevice fabrication and applications are expected. In this work, nanowire type GaAs structures are synthesized on porous single-wall carbon nanotubes (SWCNTs) as templates using the molecular beam epitaxy (MBE) technique. The field emission properties of the as-synthesized products were investigated to suggest their potential applications as cold electron sources, as well. The SWCNT template was synthesized by the arc-discharge method. SWCNT samples were heat-treated at $400^{\circ}C$ under an $N_2/O_2$ atmosphere to remove amorphous carbon. After heat treatment, GaAs was grown on the SWCNT template. The growth conditions of the GaAs in the MBE system were set by changing the growth temperatures from $400^{\circ}C$ to $600^{\circ}C$. The morphology of the GaAs synthesized on the SWCNTs strongly depends on the substrate temperature. Namely, nano-crystalline beads of GaAs are formed on the CNTs under $500^{\circ}C$, while nanowire structures begin to form on the beads above $600^{\circ}C$. The crystal qualities of GaAs and SWCNT were examined by X-ray diffraction and Raman spectra. The field emission properties of the synthesized GaAs nanowires were also investigated and a low turn-on field of $2.0\;V/{\mu}m$ was achieved. But, the turn-on field was increased in the second and third measurements. It is thought that arsenic atoms were evaporated during the measurement of the field emission.

• 한국항공우주학회지
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• 제40권11호
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• pp.1004-1009
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• 2012

탄소나노튜브는 우수한 전기적 특성과 전계를 집중시킬 수 있는 높은 종횡비 그리고 뛰어난 열적 안정성 때문에, 높은 전류밀도와 낮은 구동전압 그리고 긴 수명시간과 같은 우수한 전계 방출 특성을 구현할 수 있는 재료이다. 탄소나노튜브를 이용하여 전계방출원을 제작하기 위해서는 금속전극에 탄소나노튜브를 고정시켜야 한다. 이때 금속과 탄소나노튜브 사이의 접촉문제가 필수적인데, 본 실험에서는 그래핀을 계면으로 사용함으로써 본 문제를 해결하였다. 이러한 시도는 금속과 탄소나노튜브 사이에 우수한 전기적 열적 계면을 형성함으로써 기존 전계방출원보다 뛰어난 전계방출 성능을 얻을 수 있게 하였다. 본 연구를 통해 탄소나노튜브 전계방출원을 전자 추진원으로의 응용이 기대된다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.274-277
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• 2006

Nanostructured carbon (nm-C), including carbon nanotubes and nanofibers (CNTs/CNFs) is promising for low-cost field emission display (FED) application. By modification of CNTs/CNFs, uniform CNTs/CNFs can be obtained and used for field emission cathode (FEC) on glass substrate. By screen-printing (SP) and electrophoretic deposition (EPD) process, large area FEC can be obtained. The FED properties are studied and compared. Both SP and EPD FEC show excellent field emission properties, such as low emission field and uniform emission, after optimization the fabrication process. While EPD FEC exhibits better luminescence image. By vacuum sealing, the low cost nm-C-FED prototypes based on EPD cathode have been demonstrated.

• Journal of Information Display
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• 제7권2호
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• pp.16-21
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• 2006

The effect of improvement on the surface morphology of screen-printed carbon nanotube (CND) films was studied by using the optically clear poly-dimethylsiloxane (PDMS) elastomer for surface treatment. After the PDMS activation treatment was applied to the diode-type CNT cathode, the entangled carbon nanotube (CNT) bundles were broken up into individual free standing nanotubes to remarkably improve the field-emission characteristics over the as-deposited CNT film. Also, the cathode film morphology of a top gated triode-type structure can be treated by using the proposed surface treatment technique, which is a low-cost process, simple process. The relative uniform emission image showed high brightness with a high anode current. This result shows the possibility of using this technique for surface treatment of large-size field emission displays (FEDs) in the future.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1224-1225
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• 2008

The results of the experiment that was conducted on the electron emission property and the long-term stability of the emission current in various carbon nanotubes (CNTs)-based field emitters with a CNT/catalyst/buffer/W-tip configuration are presented herein. CNT-based field emitters were fabricated by varying the (TiN, Al/Ni/TiN) buffer layer and the (Ni, Co) catalyst material. This study aimed to elucidate how the buffer layers and catalyst materials affect the structural properties of CNTs and the long-term stability of CNT emitters. Raman spectroscopy, field emission SEM, and high-resolution TEM were used to analyze the crystalline structure, surface morphologies, and nanostructures of all the grown CNTs. X-ray photoelectron spectroscopy (XPS) was used to monitor the chemical bonds of all the buffer layers and catalysts. Electron emission measurement and a long-term (up to 40h) stability test were carried out using a compactly designed field emission measurement system.

• 대한금속재료학회지
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• 제49권4호
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• pp.342-347
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• 2011

We fabricated the silicon nanodots using the low pressure chemical vapor deposition technique to investigate their electron field emission characteristics. Atomic force microscope measurements performed for the silicon nanodot samples having various process parameters, such as, deposition time and deposition pressure, revealed that the silicon nanodots with an average size of 20 nm, height of 5 nm, and density of $1.3\;{\times}\;10^{11}\;cm^{-2}$ were easily formed. Electron field emission measurements were performed with the silicon nanodot layer as the cathode electrode. The current-voltage curves revealed that the threshold electric field was as low as $8.3\;V/{\mu}m$ and the field enhancement factor reached as large as 698, which is compatible with the silicon cathode tips fabricated by other techniques. These electron field emission results point to the possibility of using a silicon-based light source for display devices.

• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.28-31
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• 2013

A volcano shaped gated Si-FEA (silicon field emitter array) was simply fabricated using sputtering as a gate electrode deposition and lift-off for the removal of the oxide mask, respectively. Due to the limited step coverage of well-controlled sputtering and the high aspect ratio in Si dry etch caused by high RF power, it was possible to obtain Si FEAs with a stable volcano shaped gate structure and to realize the restriction of gate leakage current in field emission characteristics. For 100 tip arrays and 625 tip arrays, gate leakage currents were restricted to less than 1% of the anode current in spite of the volcano-shaped gate structure. It was also possible to keep the emitters stable without any failure between the Si cathode and gate electrode in field emission for a long time.