Journal of Information Display

The Korean Infomation Display Society (한국정보디스플레이학회)
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Improved Field Emission by Liquid Elastomer Modification of Screen-Printed CNT Film Morphology

  • Lee, Hyeon-Jae (Display and Nanosystem Lab., College of Engineering, Korea University) ;
  • Lee, Yang-Doo (Display and Nanosystem Lab., College of Engineering, Korea University) ;
  • Cho, Woo-Sung (Display and Nanosystem Lab., College of Engineering, Korea University) ;
  • Kim, Jai-Kyeong (Korea Institute of Science and Technology) ;
  • Lee, Yun-Hi (Department of physics, Korea University) ;
  • Hwang, Sung-Woo (School of Electrical Engineering, Korea University) ;
  • Ju, Byeong-Kwon (Display and Nanosystem Lab., College of Engineering, Korea University)
  • Published : 2006.06.24
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Abstract

The effect of improvement on the surface morphology of screen-printed carbon nanotube (CND) films was studied by using the optically clear poly-dimethylsiloxane (PDMS) elastomer for surface treatment. After the PDMS activation treatment was applied to the diode-type CNT cathode, the entangled carbon nanotube (CNT) bundles were broken up into individual free standing nanotubes to remarkably improve the field-emission characteristics over the as-deposited CNT film. Also, the cathode film morphology of a top gated triode-type structure can be treated by using the proposed surface treatment technique, which is a low-cost process, simple process. The relative uniform emission image showed high brightness with a high anode current. This result shows the possibility of using this technique for surface treatment of large-size field emission displays (FEDs) in the future.

Keywords

References

  1. W. B. Choi, D. S. Chung, J. H. Kang, H. Y. Kim, Y. W. Jin, I. T. Han, Y. H. Lee, J. E. Jung, N. S. Lee, G. S. Park, and J. M. Kim, Appl. Phys. Lett., 75, 3129 (1999) https://doi.org/10.1063/1.125253
  2. W. B. Choi, Y. W. Jin, H. Y. Kim, S. J. Lee, M. J. Yun, J. H. Kang, Y. S. Choi, N. S. Park, N. S. Lee, and J. M. Kim, Appl. Phys. Lett., 78, 1547 (2001) https://doi.org/10.1063/1.1349870
  3. Z. F. Ren, Z. P. Huang, J. W. Xu, J. H. Wang, P. Bush, M. P. Siegal, and P. N. Provencio, Science, 282, 1105 (1998) https://doi.org/10.1126/science.282.5391.1105
  4. T. W. Jeong J. N. Heo, J. H. Lee, S. H. Lee, W. S. Kim, H. J. Lee, S. H. Park, J. M. Kim, T. S. Olt, C. W. Park, J. B. Yoo, B. Y. Gong, N. S. Lee, and S. G. Yu, Appl. Phys. Lett., 87, 063112 (2005) https://doi.org/10.1063/1.2009055
  5. L. H. Chen, J. F. AuBuchon, A. Gapin, C. Daraio, P. Bandaru, S. Jin, D. W. Kim, I. K. Yoo, and C. M. Wang, Appl. Phys. Lett., 85, 5373 (2004) https://doi.org/10.1063/1.1830081
  6. Xueping Xu and G. R. Brandes, Appl. Phys. Lett., 74, 2549 (1999) https://doi.org/10.1063/1.123894
  7. Y. H. Lee, Y. T. Jang, D. H. Kim, J. H. Ahn, and B. K. Ju, Adv. Mater. (Weinheim, Ger.), 13, 479 (2001) https://doi.org/10.1002/1521-4095(200104)13:7<479::AID-ADMA479>3.0.CO;2-H
  8. J. Li, W. Lei, X. Zhang, X. Zhou, Q. Wang, Y. Zhang, and B. Wang, Appl. Surf. Sci., 220, 96 (2003) https://doi.org/10.1016/S0169-4332(03)00749-9
  9. J. H. Park, J. H. Choi, J. S. Moon, D. G. Kushinov, J. B. Yoo, C. Y. Park, J. W. Nam, C. K. Lee, J. H. Park, and D. H. Choe, Carbon, 43, 698 (2005) https://doi.org/10.1016/j.carbon.2004.10.036
  10. C. C. Lee, B. N. Lin, M. C. Hsiao, Y. Y. Chang, W. Y. Lin, L. Y. Jiang, in SID Tech. Dig., 1716 (2005)
  11. Yong C. Kim, K. H. Sohn, Y. M. Cho, and Eun H. Yoo, Appl. Phys. Lett., 84, 5350 (2004) https://doi.org/10.1063/1.1766403
  12. T. J. Vink, M. Gillies, J. C. Kriege, and H. W. J. J. van de Laar, Appl. Phys. Lett., 83, 3552 (2003) https://doi.org/10.1063/1.1622789
  13. Deuk-Seok ChU11g, S. H. Park, H. W. Lee, J. H. Choi, S. N. Cha, J. W. Kim, J. E. Jang, K. W. Min, S. H. Cho, M. J. Yoon, J. S. Lee, C. K. Lee, J. H. Yoo, Jong-Min Kim, J. E. Jung, Y. W. Jin, Y. J. Park, and J. B. You, Appl. Phys. Lett., 80, 4045 (2002) https://doi.org/10.1063/1.1480104
  14. D. S. Chung, S. H. Park, H. W. Lee, J. H. Choi, S. N. Cha, J. W. Kim, J. E. Jang, K. W. Min, S. H. Cho, M. J. Yoon, J. S. Lee, C. K. Lee, J. H. Yoo, Jong-Min Kim, J. E. Jung, Y. W. Jin, Y. J. Park, and J. B. You, Appl. phys. Lett. 80, 4045 (2002) https://doi.org/10.1063/1.1480104
  15. Y. W. Jin, J. E. Jung, Y. J. Park, J. H. Choi, D. S. Jung, H. W. Lee, S. H. Park, N. S. Lee, 1. M. Kim, T. Y. Ko, S. J. Lee, S. Y. Hwang, J. H. You, Ji-Beom Yoo, and Chong-Yun Park, J. Appl. Phys., 92, 1065 (2002) https://doi.org/10.1063/1.1489067
  16. Y. S. Shi, C.-C. Zhu, W. Qikun and L. Xin, Diamond Relat. Mate., 12, 1449 (2003) https://doi.org/10.1016/S0925-9635(03)00170-5
  17. D.H. Kim, C.D. Kim and H. R. Lee, Carbon, 42, 1807 (2004) https://doi.org/10.1016/j.carbon.2004.03.015
  18. L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, J.-M. Bonard, and K. Kern, Appl. Phys. Lett., 76, 2071 (2000) https://doi.org/10.1063/1.126258
  19. J. S. Suh, K. S. Jeong, I. S. Lee, and I. T. Han, Appl. Phys. Lett., 80, 2392 (2002) https://doi.org/10.1063/1.1465109