• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.450-450
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• 2010

Recently, field emission emitters made by carbon nanotubes(CNTs) and ink-jet method have been extensively studied due to their low cost, little limitation of size and a high resolution. When CNT emitters are operated, a few highly protruded ones generate most of the emission currents that cause spatial nonuniformity. In this study, we applied selective oxidation to solve this problem on ink-jet printed CNT emitters. Consequently, O2 exposures to field emitting CNT arrays give rise to a permanent damage selectively on the highly emitting CNTs. In spite of turn-on field increase, emission images was showed remarkably uniform after oxygen trimming.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.43-48
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• 1999

Using microwave plasma-enhanced chemical vapor deposition, diamond films were successfully grown on Ti-coated glass substrates at temperatures as low as around 500$^{\circ}C$ in behalf of practical applications to field emitters. Electron emission was observed at turn-on fields below 18V-$\mu\textrm{m}$. Field emission characteristics of diamond films were discussed in terms of their crystalline qualities. diamond films with poorer crystalline qualities showed better field emission properties.

• Korean Journal of Materials Research
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• v.15 no.11
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• pp.711-716
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• 2005

The effects of change in the component of bonding materials in carbon nanotube cathode (CNT-cathode) on field enhancement and field emission characteristics were investigated. The field enhancement factor$\beta$ was dependent on the electrical conductivity of the bonding materials. The use of frit glass as a bonding material showed a higher field enhancement factor and better field emission characteristics than an Ag paste. The reason for why the frit glass showed better field emission characteristics can be summarized as follows. First, a frit glass improves the real aspect ratio of CNTs compared to an Ag paste. Second, the number of CNTs in CNT-cathodes is considerably reduced because the CNTs were extensively oxidized during $390^{\circ}C$ heat treatment in air atmosphere in the case of Ag paste.

• Proceedings of the KSME Conference
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• 2005.11a
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• pp.239.1-239.1
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• 2005

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.649-650
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• 2007

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.608-625
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• 1997

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.69-72
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^{2}$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.160-166
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• 1998

The field emission characteristics of defective diamond films grown by microwave plasma enhanced chemical vapor deposition (MPECVD) have been studied. X-ray diffraction, the poor crystal quality and/or small grain sizes of the diamond phase and the inclusion of the non-diamond carbon phases in these films have been condirmed by raman spectroscopy, scanning electron microscopy, atomic force microscopy, and the reflectance measurements. The degrees of the film defectiveness and the emission characteristics were dependent on the methane concentration. Current-versus-voltage measurements have demonstrated that the defective diamond films have good electron emission characteristics. characteristics strongly suggests the defect-related electron-emission mechanism. The defective diamond films deposited on Si substrates show the field emission current density of 1$\mu\textrm{A}/\textrm{cm}^2$ and 1mA/$\textrm{cm}^2$ have been measured at electric fields as low as 4.5V/$\mu\textrm{m}$ and 7.6V/$\mu\textrm{m}$, respectively. We also observed the similar emission characteristics from the defective diamond film deposited on Cr/Si substrate and could decrease the deposition temperature to $600^{\circ}C$.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.26-31
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• 2007

A surface treatment was performed after the screen printing of a carbon nanotube paste for obtaining the carbon nanotube field emission array(CNT FEA) on the soda-lime glass substrate. In this experiment, Ar ion bombardment was applied as an effective surface treatment method. After making a cathode electrode on the glass substrate, photo sensitive CNT paste was screen-printed, and then back-side was exposure by uv light. Then, the exposed CNT paste was selectively remained by development. After post-baking, the remained CNT paste was bombarded by accelerated Ar ions for removing some binders and exposing only CNTs. As results, the field emission characteristics were strongly depended on the accelerating energy. At 100 eV, the emission was highest and as the acceleration energy increases more then 100 eV, the emission decreased. This was due to the removal of CNT itself as well as binders.

• Journal of the Semiconductor & Display Technology
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• v.9 no.1
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• pp.41-47
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• 2010

The effects of thermal treatment on CNTs, which were coated with a-$CN_x$ thin film, were investigated and related to variations of chemical bonding and morphologies of CNTs and also properties of field emission induced by thermal treatment. CNTs were directly grown on nano-sized conical-type tungsten tips via the inductively coupled plasma-chemical vapor deposition (ICP-CVD) system, and a-$CN_x$ films were coated on the CNTs using an RF magnetron sputtering system. Thermal treatment on a-$CN_x$ coated CNT-emitters was performed using a rapid thermal annealing (RTA) system by varying temperature ($300-700^{\circ}C$). Morphologies and microstructures of a-$CN_x$/CNTs hetero-structured emitters were analyzed by FESEM and HRTEM. Chemical composition and atomic bonding structures were analyzed by EDX, Raman spectroscopy, and XPS. The field emission properties of the a-$CN_x$/CNTs hetero-structured emitters were measured using a high vacuum (below $10^{-7}$ Torr) field-emission measurement system. For characterization of emission stability, the fluctuation and degradation of the emission current were monitored in terms of operation time. The results were compared with a-$CN_x$ coated CNT-emitters that were not thermally heated as well as with the conventional non-coated CNT-emitters.