• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 1998년도 제13차 학술회의논문집
• /
• pp.395-400
• /
• 1998

A design of PIDA (Proportional-Integral-Derivative-Acceleration) controller for the third-order plant using the CDM (Coefficient Diagram Method) is presented. Using CDM, the closed-loop system with the designed PIDA controller can be made stable and satisfied both transient and steady state response specifications without any adjustment. The effect of output step disturbance can also be lastly rejected. The fast step response of the controlled system can be achieved by reducing the equivalent time constant. The MATLAB's simulation results show that the performances of the designed controlled system using CDM is better than the performances of the controlled system using PIDA controller designed by its own technique.

• 전자공학회논문지B
• /
• 제28B권12호
• /
• pp.38-50
• /
• 1991

A current-controlled scheme of pulse width modulation voltage source inverter (PWM VSI) has attracted considerable attention due to its fast response with current limit and especially suitable for potentially high performance applications such as AC motor drives and UPS systems. These features yield near-sinusoidal currents in the load with reduced current peaks, lower inverter switching frequency and reduce inverter and load stresses. A high performance current-controlled inverter must have a quick response in transient state and low harmonic current in steady state. This paper compares and shows the controlled-characteristics with hysteresis controller(HC), ramp comparison controller(RCC) and predictive controller(PC) of PWM inverter to control actual current of VSI-IM.

• 조명전기설비학회논문지
• /
• 제26권5호
• /
• pp.71-78
• /
• 2012

This paper presents a digital control solution to process capacitor current feedback of high performance single-phase UPS for non-linear loads. In all UPS the goal is to maintain the desired output voltage waveform and RMS value over all unknown load conditions and transient response. The proposed UPS uses instantaneous load voltage and filter capacitor current feedback, which is based on the double regulation loop such as the outer voltage control loop and inner current control loop. The proposed DSP-based digital-controlled PWM inverter system has fast dynamic response and low total harmonic distortion (THD) for nonlinear load. The control system was implemented on a 32bit Floating-point DSP controller TMS320C32 and tested on a 5[KVA] IGBT based inverter switching at 11[Khz]. The validity of the proposed scheme is investigated through simulation and experimental results.

• Journal of Electrical Engineering and Technology
• /
• 제2권2호
• /
• pp.263-266
• /
• 2007

We report a nickel optical MEMS switch, being able to rotate through a large angle and to accommodate multiple channels. The proposed optical switch consists of a thin nickel mirror and two torsion springs supporting the mirror. The torsion springs are designed using a finite element method (FEM) such that plastic deformation of the thin nickel is avoided during the large torsion actuation. For switching speed improvement, transient vibration of the released mirror is suppressed by optimizing the mirror design and a fast switching response of $200\;{\mu}s\;(pull-down)/300\;{\mu}s\;(pull-up)$ is demonstrated.

• Biomolecules & Therapeutics
• /
• 제27권5호
• /
• pp.435-441
• /
• 2019

The capsaicin receptor TRPV1 (transient receptor potential vanilloid 1) has been an object of intense interest for pharmacological development on account of its critical role in nociception. In the course of structure activity analysis, it has become apparent that TRPV1 ligands may vary dramatically in the rates at which they interact with TRPV1, presumably reflecting differences in their abilities to penetrate into the cell. Using a fast penetrating agonist together with an excess of a slower penetrating antagonist, we find that we can induce an agonist response of limited duration and, moreover, the duration of the agonist response remains largely independent of the absolute dose of agonist, as long as the ratio of antagonist to agonist is held constant. This general approach for limiting agonist duration under conditions in which absolute agonist dose is variable should have more general applicability.

• 대한기계학회논문집A
• /
• 제36권7호
• /
• pp.777-787
• /
• 2012

본 논문에서는 여러 가지 충격하에서 압저항 고충격 미소가속도계의 과도 출력전압의 계산시 발생하는 방대한 계산 시간 문제를 모드중첩법 및 최소자승법을 이용하여 압저항 미소가속도계의 실시간 출력전압 계산이 가능하도록 효율적인 출력전압 과도해석 방법을 제안한다. 우선 정적 압저항-구조 해석을 통하여 미소가속도계의 변위와 출력전압을 계산하고 출력전압을 특정 위치의 변위에 관한 2차 다항식으로 근사화하여 그 회귀계수를 최소자승법을 통하여 결정한다. 이후에 모드중첩법을 통하여 여러 방향의 고충격하에서 미소가속도계의 과도 변위응답을 계산하고, 이 변위응답을 변위로 표현되는 출력전압 근사식에 대입하여 과도 출력전압을 예측한다. 100,000 G 고충격파, 사인파, 계단파 및 사각파 등의 여러 가지 고충격 입력에 대한 압저항 미소가속도계의 수치예제를 통하여 제안한 방법의 정확성 및 효율성을 검증하였다.

• ETRI Journal
• /
• 제39권3호
• /
• pp.373-382
• /
• 2017

A new internally compensated low drop-out voltage regulator based on the cascoded flipped voltage follower is presented in this paper. Adaptive biasing current and fast charging/discharging paths have been added to rapidly charge and discharge the parasitic capacitance of the pass transistor gate, thus improving the transient response. The proposed regulator was designed with standard 65-nm CMOS technology. Measurements show load and line regulations of $433.80{\mu}V/mA$ and 5.61 mV/V, respectively. Furthermore, the output voltage spikes are kept under 76 mV for 0.1 mA to 100 mA load variations and 0.9 V to 1.2 V line variations with rise and fall times of $1{\mu}s$. The total current consumption is $17.88{\mu}V/mA$ (for a 0.9 V supply voltage).

• 제어로봇시스템학회논문지
• /
• 제5권8호
• /
• pp.889-897
• /
• 1999

This paper deals with a problem searching a target transfer function to meet the time-domain specifications for feedback system with given plant transfer function. For the Type I system, we first define three forms of transient response to unit step input, which are named by F, M, S-type. These are charaacterized as follows ; F-type has fast initial response and slow approach to the steady sate after reaching at 90% of the steady state value, S-type has slow initial response but fast approach to the steady state, and M-type is denoted by highly smooth response between F-type and S-type. Three prototypes corresponding to each form are proposed, time. For the order $n{\geq}4$, after determining admissible root structures of target characteristic polynomials empirically and expressing such polynomial coefficients by using special parameters ${\gamma}_i$ and $\epsilon$, the optimal prototypes that minimize the integral of the squared of the modified errors(ISME) have been obtained. Since the step responses of these prototypes have almost same wave forms irrespective to the order, the desired settling time or the rise time can be converted into the equibalent time constant $\tau$ and thus it is easy to obtain a target transfer function. It is shown through a design example that the present prototype is very useful for meeting the time-domain specifications and has been compared with different methods with a viewpoint of pertinence.

• 전기전자학회논문지
• /
• 제19권4호
• /
• pp.506-513
• /
• 2015

본 논문에서는 외부 커패시터가 없는 low-dropout (LDO) 레귤레이터를 설계하였으며, 대기 전류는 $4.5{\mu}A$ 이다. 제안하는 LDO 레귤레이터는 정밀한 로드 레귤레이션과 빠른 응답 속도를 만족하기 위해 두 개의 증폭기를 사용 하였고, 높은 이득을 갖는 증폭기와 빠른 속도 및 높은 슬루율을 가지는 증폭기로 구성 되어 있다. 이와 함께 패스 트랜지스터의 게이트에 존재하는 큰 기생 커패시터에 전류를 빠르게 충 방전시키기 위해, 전류 부스팅 회로를 추가하였다. 이를 통해 부하 전류 변화 시 응답 시간을 향상 시키게 된다. 설계된 회로는 $0.11-{\mu}m$ CMOS 공정으로 제작되었다. 최대 200mA 의 부하 전류를 구동할 수 있으며, 출력 전압 변동은 260mV, 회복 시간은 $0.8{\mu}s$ 을 측정하였다.

• Nuclear Engineering and Technology
• /
• 제51권3호
• /
• pp.731-737
• /
• 2019

In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.