• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.37-43
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• 2022

In this study, we investigated the optical, electrical and exothermic characteristics of ITO/Ag/ITO multilayer structures prepared with various Ag thicknesses on quartz and PI substrates. The transparent conducting properties of the ITO/Ag/ITO multilayer films depended on the thickness of the mid-layer metal film. The ITO/Ag (14 nm)/ITO showed the highest Haccke's figure of merit (FOM) of approximately 19.3×10^-3 Ω^-1. In addition, the exothermic property depended on the substrate. For an applied voltage of 3.7 V, the ITO/Ag (14 nm)/ITO multilayers on quartz and PI substrates were heated up to 110℃ and 200℃, respectively. The bending tests demonstrated a comparable flexibility of the ITO/Ag/IT multilayer to other transparent electrodes, indicating the potential of ITO/Ag/ITO multilayer as a flexible transparent conducting heater.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.794-797
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• 2004

The object of investigation is represented by PbxSrl-xTiO3(PST) thin films, which were fabricated by the alkoxide-based sol-gel method on Pt/Ti/SiO2/Si substrate. We have investigated both structural and dielectric properties of PST thin films aimed to tunable microwave device applications as a function of Pb/Sr ratio. PST thin films showedtypical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films were found as strongly dependent on Pb/Sr composition ratio. Increasing of Pb content leads to simultaneous increasing of both dielectric constant and dielectric loss characteristics of PST films. The figure of merit (FOM) Parameter (FOM : (%) tunability / tan (%)) reached a maximal value of 27.5 corresponding to Pb/Sr ratio of 40/60. The tunability increased with increasing Pb content. The dielectric constants, dielectric loss and tunability of the PST thin films at Pb/sr ratio of 40/60 measured at 100 kHz were 335, 0.0174 and 47.89 %, respectively.

• Nuclear Engineering and Technology
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• 제52권12호
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• pp.2821-2835
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• 2020

The phenomenon identification and ranking table (PIRT) is an important basis in the nuclear power plant (NPP) thermal-hydraulic analysis. This study focuses on the importance ranking of the input parameters when lacking the PIRT, and the target scenario is the small break loss of coolant accident (SBLOCA) in a pressurized water reactor (PWR) CPR1000. A total of 54 input parameters which might have influence on the figure of merit (FOM) were identified, and the sensitivity measure of each input on the FOM was calculated through an optimized moment-independent global sensitivity analysis method. The importance ranking orders of the parameters were transformed into the Savage scores, and the parameters were categorized based on the Savage scores. A parameter importance ranking table for the SBLOCA scenario of the CPR1000 reactor was obtained, and the influences of some important parameters at different break sizes and different accident stages were analyzed.

• 한국전자파학회논문지
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• 제15권1호
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• pp.68-72
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• 2004

InGaP/GaAs HBT공정을 이용하여 1.75 ㎓의 전압제어 발진기를 설계한다. 전압제어 발진기의 위상 잡음을 개선하기 위하여 저역 통과 필터의 특성을 가지는 새로운 잡음 제거 회로를 제안하고, 극 소형화를 위하여 FR-4 기판의 특수한 적층 구조를 이용한다. 제작된 전압제어 발진기의 주파수 변화 범위는 약 200 MHz이고, 위상 잡음은 120 KHz 옵？에서 -119.3 ㏈c/Hz이다. VCO 코어의 소비 전력은 공급 전원 2.8 V에서 11.2 ㎽이고, 출력 파워는 -2 ㏈m이다. FOM의 계산치는 191.7로써, 지금까지 발표된 FET나 HBT 전압제어 발진기보다 좋은 성능을 보인다. 완성된 전압제어 발진기의 크기는 3.266 mm ${\times}$ 3.186 mm로 극소형이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.648-651
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• 2004

Pb0.5Sr0.5TiO3(PST) thin films were deposited on the LaNiO3 (LNO(100))/Si and Pt/Ti/SiO2/Si substrates by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. The PST films, which were directly grown on the Pt/Ti/SiO2/Si substrates showed the random orientation. For the LNO/Si substrates, the PST thin films exhibited highly (100) orientation. Compared with randomly oriented films, the highly (100)-oriented PST thin films showed better dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress and the in-plane oriented Polar axis depending on the substrate was used. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the LNO/Si substrates measured at 1 MHz were 483, 0.002, and 60.1%, respectively.

• 전자공학회논문지 IE
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• 제44권2호
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• pp.14-20
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• 2007

본 논문에서는 개선된 성능을 갖는 4치 D-플립플롭을 제안하였다. 제안된 4치 D 플립플롭은 뉴런모스를 기반으로 바이어스 인버터, 온도계 코드 출력회로, EX-OR 게이트, 전달 게이트를 이용하여 4치 항등 논리회로(Identity logic circuit)를 구성하고, 이를 2진의 RS 래치 회로와 결합하여 설계하였다. 설계된 회로들은 3.3V 단일 공급 전원에서 $0.35{\mu}m$ 1-poly 6-metal COMS 공정 파라미터 표준조건에서 HSPICE를 사용하여 모의실험 하였다. 모의실험 결과, 본 논문에서 제안된 4치 D 플립플롭은 100MHz 전후까지의 빠른 동작속도로 측정되었으며 PDP(Power dissipation-delay time product)와 FOM(Figure of merit)은 각각 59.3pJ과 33.7로 평가되어졌다.

• 한국전자통신학회논문지
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• 제16권3호
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• pp.443-450
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• 2021

플라스틱 기판 중에서 열적 안정성과 광학적 특성이 우수한 PES 기판을 선택한 후, 흡습성이 높은 단점을 보완하기 위해 플라즈마 화학기상증착 법으로 SiO₂ 박막을 버퍼층으로 20nm 두께로 증착하였다. 그 후 ITZO 박막을 고주파 마그네트론 스퍼터링 법으로 증착하여 RF파워에 따른 전기적 및 광학적 특성들을 조사하였다. RF파워 50W에서 증착한 ITZO 박막이 8.02 × 10^-4 Ω-cm의 비저항과 50.13 Ω/sq.의 면저항으로 가장 우수한 전기적 특성을 나타내었다. ITZO 박막의 가시광 영역(400-800 nm)에서의 평균 투과도는 RF파워가 40, 50W인 경우 80% 이상으로 비교적 높은 값을 나타내었다. 재료 평가 지수들인 Φ_TC와 FOM은 RF파워 50W에서 증착한 ITZO 박막에서 각각 23.90×10^-4 Ω^-1와 5883 Ω^-1cm^-1로 가장 큰 값을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.178.1-178.1
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• 2015

In and Ga doped ZnO (IGZO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on glass substrate and TiO2-deposited glass substrates to consider the effect of a thin TiO2 buffer layer on the optical and electrical properties of the films. The thicknesses of the TiO2 buffer layer and IGZO films were kept constant at 5 and 100 nm, respectively. Since the IGZO/TiO2 bi-layered films show the higher FOM value than that of the IGZO single layer films, it is supposed that the IGZO/TiO2 bi-layered films will likely perform better in TCO applications than IGZO single layer films.

• Nuclear Engineering and Technology
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• 제52권2호
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• pp.360-365
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• 2020

A technique for the reduction of pulse pile-up effect in digital pulse-shape discrimination (PSD) of neutrons and gamma-rays with organic scintillation detectors is presented. The technique is based on an electronic reduction of the effective decay-time constant of scintillation pulses while retaining the PSD information of the pulses. The experimental results obtained with a NE213 liquid scintillation detector in a mixed radiation field of neutrons and gamma-rays are presented, demonstrating a figure of merit (FOM) of 1.20 ± 0.05 with an energy threshold of 350 keVee (electron equivalent energy) when the effective length of the pulses is reduced to 50 ns.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권3호
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• pp.207-212
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• 2013

A new CMOS voltage-bias differential LC voltage-controlled oscillator (LC-VCO) with active source degeneration is proposed. The proposed degeneration technique preserves the quality factor of the LC-tank which leads to improvement in phase noise of VCO oscillators. The proposed VCO shows the high figure of merit (FOM) with large tuning range, low power, and small chip size compared to those of conventional voltage-bias differential LC-VCO. The proposed VCO implemented in 0.18-${\mu}m$ CMOS shows the phase noise of -118 dBc/Hz at 1 MHz offset oscillating at 5.03 GHz, tuning range of 12%, occupies 0.15 $mm^2$ of chip area while dissipating 1.44 mW from 0.8 V supply.