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Design of a Low Noise Ultraminiature VCO using the InGap/GaAs HBT Technology  

전성원 (한양대학교 전자전기컴퓨터공학부)
이상설 (한양대학교 전자전기컴퓨터공학부)
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Abstract
The integrated voltage-controlled-oscillator(VOC) operating at 1.75 ㎓ is designed using the InGaP/GaAs HBT process. The proposed noise removal circuit and FR-4 substrate structure in this letter show the better characteristic of the phase noise and reduce the size of the VCO. The frequency tuning range of the VCO is about 200 ㎒ and the phase noise at 120 ㎑ offset is -119.3 ㏈c/㎐. The power consumption of the VCO core is 11.2 ㎽ at 2.8 V supply voltage and the output power is -2 ㏈m. The calculated figure of merit(FOM) is 191.7, which shows the best performance compared with the previous FET or HBT VCO.
Keywords
VCO; Phase Noise; InGaP/GaAs HBT;
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