• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.2
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• pp.70-77
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• 2007

The application of focused ion beam(FIB) technology has been broadened in the fabrication of nanoscale regime. The extended application of FIB is dependent on complicated reciprocal relation of operating parameters. It is necessary for successful and efficient modifications on the surface of silicon substrate. The primary effect by Gaussian beam intensity is significantly shown from various aperture size, accelerating voltage, and beam current. Also, the secondary effect of other process factors - dwell time, pixel interval, scan mode, and pattern size has affected to etching results. For the process analysis, influence of the secondary factors on FIB micromilling process is examined with respect to sputtering depth during the milling process in silicon material. The results are analyzed by the ratio of signal to noise obtained using design of experiment in each parameter.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.322-325
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• 2005

The shrinking critical dimensions of modern technology place a heavy requirement on optimizing feature shapes at the micro- and nano scale. In addition, the use of ion beams in the nano-scale world is greatly increased by technology development. Especially, Focused ion Beam (FIB) has a great potential to fabricate the device in nano-scale. Nevertheless, FIB has several limitations, surface swelling in low ion dose regime, precipitation of incident ions, and the re-deposition effect due to the sputtered atoms. In recent years, many approaches and research results show that the re-deposition effect is the most outstanding effect to overcome or reduce in fabrication of micro and nano devices. A 2D string based simulation software AMADEUS-2D $(\underline{A}dvanced\;\underline{M}odeling\;and\;\underline{D}esign\;\underline{E}nvironment\;for\;\underline{S}putter\;Processes)$ for ion milling and FIB direct fabrication has been developed. It is capable of simulating ion beam sputtering and re-deposition. In this paper, the 2D FIB simulation is demonstrated and the characteristics of ion beam induced direct fabrication is analyzed according to various parameters. Several examples, single pixel, multi scan box region, and re-deposited sidewall formation, are given.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.3
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• pp.209-216
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• 2008

The application of focused ion beam (FIB) depends on the optimal interaction of the operation parameters between operating parameters which control beam and samples on the stage during the FIB deposition process. This deposition process was investigated systematically in C precursor gas. Under the fine beam conditions (30kV, 40nm beam size, etc), the effect of considered process parameters - dwell time, beam overlap, incident beam angle to tilted surface, minimum frame time and pattern size were investigated from deposition results by the design of experiment. For the process analysis, influence of the parameters on FIB-CVD process was examined with respect to dimensions and constructed shapes of single and multi- patterns. Throughout the single patterning process, optimal conditions were selected. Multi-patterning deposition were presented to show the effect of on-stage parameters. The analysis have provided the sequent beam scan method and the aspect-ratio had the most significant influence for the multi-patterning deposition in the FIB processing. The bitmapped scan method was more efficient than the one-by-one scan type method for obtaining high aspect-ratio (Width/Height > 1) patterns.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.636-639
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• 2003

It is difficult to machine below 10 micrometers by conventional machining methods, such as micro-EDM. However, ultra micro machining using focused ion beam(FIB) is able to machine to 50 nanometers. In addition, 3 dimensional structures can be made by a combination of FIB and CVD to the level of 10 nanometers. Die ＆ moulds techniques are better than one-to-one machining techniques in the mass production of ultra size structures, in regards to production costs. In this case, the machining precision of die ＆ moulds affects produced parts. Also, it is advantageous to machine die ＆ moulds to the 10 micrometer level by FIB technique rather than other techniques. In this paper, the grooving characteristics for die ＆ mould materials by FIB were carried out experimentally in order to compare the machining characteristics of FIB with conventional machining methods. The results showed that the machining parameters and the scanning path of FIB affects the precision. The machined width and depth of the groove varied depending on the required depth due to the redeposition of the sputtered ion material accumulating on both the bottom and the side of the wall.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.2
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• pp.245-250
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• 2011

A high-resolution shadow mask, a nanostencil, is widely used for high resolution lithography. This high-resolution shadowmask is often fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. In this study, FIB milling on 500-nm-thin SiN membrane was tested and characterized. 500 nm thick and $2{\times}2$ mm large membranes were made on a silicon wafer by micro-fabrication processes of LPCVD, photolithography, ICP etching and bulk silicon etching. A subsequent FIB milling enabled local membrane thinning and aperture making into the thinned silicon nitride membrane. Due to the high resolution of the FIB milling process, nanoscale apertures down to 60 nm could be made into the membrane. The nanostencil could be used for nanoscale patterning by local deposition through the apertures.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.3
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• pp.207-213
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• 2014

A study was carried out to fabricate the cutting tool geometry with micro/nanoscale on the single crystal diamond tool by using the FIB. The FIB technique is an ideal tool for TEM sample preparation that allows for the fabrication of electron-transparent foils. The FIB is appropriate techniques to sample and subsequently define the chemical composition and the structural state of mineral inclusion on the micro/nanoscale. The combination of FIB with a SEM allows for 3D information to be obtained from samples including 3D imaging. Cutting strategies were demonstrated to improve the performance of cutting tool geometry and to generate high aspect ratio micro cutting tool. A finely focused beam of 30keV Ga+ ions was used to mill cutting tool shapes for various micro patterns. Therefore FIB sputtering is used to shape a variety of cutting tools with dimensions in the $1-5{\mu}m$ range and cutting edge radii of curvature of under 50nm.

• Journal of the Mineralogical Society of Korea
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• v.28 no.4
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• pp.293-297
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• 2015

Focused ion beam (FIB) technique is widely used in the precise preparation of thin slices for the transmission electron microscopic (TEM) observation of target area of the minerals and geological materials. However, structural damages and artifacts by the Ga ion beam as well as electron beam damage are major difficulties in the TEM analyses. TEM analyses of the mineral samples showed the amorphization of quartz and feldspar, curtain effect, and Ga contamination, particularly near the grain edges and relatively thin regions. Although the ion beam damage could be much reduced by the improved procedures including the adjustment of the acceleration voltage and current, the ion beam damage and contamination are likely inevitable, thus requiring careful interpretation of the micro-structural and micro-chemical features observed by TEM analyses.

• Applied Microscopy
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• v.40 no.4
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• pp.177-183
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• 2010

A focused ion beam (FIB) system produces a beam of positive ions (usually gallium) which are heavier than electrons and can be focused by electrostatic lenses into a spot on the specimen. With its ability milling of the specimen material by 10 to 100 nm with each pass of the beam, FIB is widely adopted in materials science, semiconductor industry, and ceramics research. Recently, FIB has been increasingly employed in the field of biomedical sciences. Here we provide a brief introduction to FIB and its applications for a wide variety of biomedical research. The surface of specimen can be in situ processed and quasi-real time visualized by two beam combination of FIB and field emission scanning electron microscope (FESEM). Due to its milling process, internal structures can be exposed and analyzed: yeast cells, fungus-inoculated wheat leaf, mannitol particles in inhalation aerosols, and oyster shell. Serial blockface tomography with the system kindles 3-dimensional reconstruction researches in the realm of nervous system and life sciences. Two-beam system of FIB/FESEM is a versatile tool to be utilized in the biomedical sciences, especially in 3-dimensional reconstruction studies.

• Transactions of Materials Processing
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• v.16 no.4 s.94
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• pp.323-328
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• 2007

The residual stress in axial direction of the steel wires has been measured by using a method based on the combination of the focused ion beam(FIB) milling and digital image correlation(DIC) program. The residual stress is calculated from the measured displacement field before and after the introduction of a slot along the steel wires. The displacement is obtained by the digital correlation analysis of high-resolution scanning electron micrographs, while the slot is introduced by FIB milling with low energy beam. The experimental procedures are described and the feasibilities are demonstrated in steel wires fabricated with different conditions. It reveals that the tensile residual stress is formed in all steel wires and this is strongly influenced by the fabrication conditions.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.3
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• pp.383-388
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• 2011

The cold hollow cathode gas ion source is under development for multi aperture focused ion beam (FIB) system. In this paper, we describe the cold hollow cathode ion source design and the general ion source performance using Ar gas. The glow discharge characteristics and the ion beam current density at various operation conditions are investigated. This ion source can generate maximum ion beam current density of approximately 120 mA/$cm^2$ at ion beam potential of 10 kV. In order to effectively transport the energetic ions generated from the ion source to the multi-aperture focused ion beam(FIB) system, the einzel lens system for ion beam focusing is designed and evaluated. The ions ejected from the ion source can be forced to move near parallel to the beam axis by adjusting the potentials of the einzel lenses.